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NT5AD1024M8C3-JRT by: Nanya Technology Corporation

DRAM,

Part Details for NT5AD1024M8C3-JRT by Nanya Technology Corporation

Overview of NT5AD1024M8C3-JRT by Nanya Technology Corporation

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Applications Consumer Electronics Internet of Things (IoT) Computing and Data Storage Entertainment and Gaming

Part Details for NT5AD1024M8C3-JRT

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NT5AD1024M8C3-JRT Part Data Attributes:

NT5AD1024M8C3-JRT Nanya Technology Corporation
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NT5AD1024M8C3-JRT Nanya Technology Corporation DRAM,
Part Life Cycle Code Active
Ihs Manufacturer NANYA TECHNOLOGY CORP
Package Description ,
Reach Compliance Code unknown
ECCN Code EAR99
Date Of Intro 2020-08-18
Access Mode FOUR BANK PAGE BURST
Clock Frequency-Max (fCLK) 1600 MHz
I/O Type COMMON
Interleaved Burst Length 8
JESD-30 Code R-PBGA-B78
Length 12 mm
Memory Density 8589934592 bit
Memory IC Type DDR4 DRAM
Memory Width 8
Number of Functions 1
Number of Ports 1
Number of Terminals 78
Number of Words 1073741824 words
Number of Words Code 1000000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 95 °C
Operating Temperature-Min -40 °C
Organization 1GX8
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code TFBGA
Package Equivalence Code BGA78,9X13,32
Package Shape RECTANGULAR
Package Style GRID ARRAY, THIN PROFILE, FINE PITCH
Seated Height-Max 1.2 mm
Self Refresh YES
Sequential Burst Length 8
Standby Current-Max 0.023 A
Supply Current-Max 0.212 mA
Supply Voltage-Max (Vsup) 1.26 V
Supply Voltage-Min (Vsup) 1.14 V
Supply Voltage-Nom (Vsup) 1.2 V
Surface Mount YES
Technology CMOS
Temperature Grade INDUSTRIAL
Terminal Form BALL
Terminal Pitch 0.8 mm
Terminal Position BOTTOM
Width 7.5 mm

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