Datasheets
NTD110N02RT4G by:

Single N-Channel Power MOSFET 24V, 110A, 4.6mΩ, DPAK 4 LEAD Single Gauge Surface Mount, 2500-REEL

Part Details for NTD110N02RT4G by onsemi

Overview of NTD110N02RT4G by onsemi

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for NTD110N02RT4G

Part # Distributor Description Stock Price Buy
DISTI # 45J2098
Newark Mosfet Transistor, N Channel, 110 A, 24 V, 4.1 Mohm, 10 V, 1.5 V Rohs Compliant: Yes |Onsemi NTD110N02RT4G Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Reel 0
Buy Now
DISTI # 74AK0753
Newark Mosfet, N Channel, 24V, 110A, To-252-3 |Onsemi NTD110N02RT4G Min Qty: 480 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 250 $1.0900
  • 500 $0.9980
  • 1,000 $0.9240
$0.9240 / $1.0900 Buy Now
Bristol Electronics   1771
RFQ
Quest Components   182
  • 1 $3.1200
  • 39 $1.7160
  • 88 $1.5600
$1.5600 / $3.1200 Buy Now
Quest Components   1492
  • 1 $0.8250
  • 122 $0.4125
  • 486 $0.3300
$0.3300 / $0.8250 Buy Now
Rochester Electronics NTD110N02R - Power Field-Effect Transistor, 12.5A, 24V, 0.0062ohm, N-Channel, MOSFET RoHS: Compliant Status: End of Life / Last Time Buy Min Qty: 1 23221
  • 1 $0.7678
  • 25 $0.7524
  • 100 $0.7217
  • 500 $0.6910
  • 1,000 $0.6526
$0.6526 / $0.7678 Buy Now
Chip 1 Exchange INSTOCK 4355
RFQ
Chip1Cloud MOSFET N-CH 24V 12.5A DPAK 23300
RFQ
DISTI # 4184670
Farnell MOSFET, N CHANNEL, 24V, 110A, TO-252-3 RoHS: Compliant Min Qty: 2500 Lead time: 3 Weeks, 1 Days Container: Each 23221
  • 2,500 $1.0544
$1.0544 Buy Now
Flip Electronics Stock, ship today 836
  • 1 $0.4500
$0.4500 RFQ

Part Details for NTD110N02RT4G

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NTD110N02RT4G Part Data Attributes

NTD110N02RT4G onsemi
Buy Now Datasheet
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NTD110N02RT4G onsemi Single N-Channel Power MOSFET 24V, 110A, 4.6mΩ, DPAK 4 LEAD Single Gauge Surface Mount, 2500-REEL
Pbfree Code Yes
Part Life Cycle Code End Of Life
Ihs Manufacturer ONSEMI
Part Package Code DPAK 4 LEAD Single Gauge Surface Mount
Package Description DPAK-3
Pin Count 4
Manufacturer Package Code 369AA
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 4 Weeks
Samacsys Manufacturer onsemi
Avalanche Energy Rating (Eas) 120 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 24 V
Drain Current-Max (ID) 12.5 A
Drain-source On Resistance-Max 0.0062 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 92.5 W
Pulsed Drain Current-Max (IDM) 110 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn) - annealed
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for NTD110N02RT4G

This table gives cross-reference parts and alternative options found for NTD110N02RT4G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NTD110N02RT4G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
NTD110N02RT4 12.5A, 24V, 0.0062ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 369AA-01, DPAK-3 onsemi NTD110N02RT4G vs NTD110N02RT4
Part Number Description Manufacturer Compare
NTD110N02R-001G 12.5A, 24V, 0.0062ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, CASE 369D-01, DPAK-3 Rochester Electronics LLC NTD110N02RT4G vs NTD110N02R-001G
NTD4905N-35G Power MOSFET 30V 67A 4.5 mOhm Single N-Channel DPAK, 3.5 mm IPAK, Straight Lead, 75-TUBE onsemi NTD110N02RT4G vs NTD4905N-35G
SUD50N02-06P-E3 TRANSISTOR 26 A, 20 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, TO-252, 3 PIN, FET General Purpose Power Vishay Siliconix NTD110N02RT4G vs SUD50N02-06P-E3
SUD50N02-06P-E3 Power Field-Effect Transistor, 26A I(D), 20V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, Vishay Intertechnologies NTD110N02RT4G vs SUD50N02-06P-E3
PHD96NQ03LT/T3 TRANSISTOR 75 A, 25 V, 0.0075 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, PLASTIC, SC-63, DPAK-3, FET General Purpose Power NXP Semiconductors NTD110N02RT4G vs PHD96NQ03LT/T3
934056846118 TRANSISTOR 75 A, 25 V, 0.0075 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, PLASTIC, SMD, SC-63, DPAK-3, FET General Purpose Power NXP Semiconductors NTD110N02RT4G vs 934056846118
NTD4856N-1G 13.3A, 25V, 0.0068ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, CASE 369D-01, IPAK-3 Rochester Electronics LLC NTD110N02RT4G vs NTD4856N-1G
NTD85N02RT4 85A, 24V, 0.0052ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 369AA, DPAK-3 onsemi NTD110N02RT4G vs NTD85N02RT4
SUD50N02-06 Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, Vishay Siliconix NTD110N02RT4G vs SUD50N02-06
NTD80N02-1G 80A, 24V, 0.0058ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, CASE 369D-01, DPAK-3 Rochester Electronics LLC NTD110N02RT4G vs NTD80N02-1G

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