Datasheets
NTE312 by: NTE Electronics Inc

RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Junction FET, TO-92,

Part Details for NTE312 by NTE Electronics Inc

Overview of NTE312 by NTE Electronics Inc

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Price & Stock for NTE312

Part # Distributor Description Stock Price Buy
DISTI # 29C5294
Newark N Channel Jfet, -30V, To-92, Gate Source Breakdown Voltage Max:-30V, Zero Gate Voltage Drain Current Max:15Ma, Gate Source Cutoff Voltage Max:-6V, No. Of Pins:3 Pin, Operating Temperature Max:125°C, Channel Type:N Channel Rohs Compliant: Yes |Nte Electronics NTE312 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk 0
Buy Now
DISTI # 2368-NTE312-ND
DigiKey JFET N-CH 30V TO92 Min Qty: 1 Lead time: 1 Weeks Container: Bag MARKETPLACE PRODUCT 115
In Stock
  • 1 $1.8000
  • 10 $1.7100
  • 20 $1.6200
  • 50 $1.5300
  • 100 $1.4900
$1.4900 / $1.8000 Buy Now
DISTI # 70215785
RS JFET, -6 V, 50, -30 mA, -30 V, 360 mW, 4000, TO-92 | NTE Electronics Inc. NTE312 RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Container: Bulk 1
  • 1 $1.6600
  • 50 $1.5800
  • 100 $1.5100
  • 250 $1.4300
$1.4300 / $1.6600 Buy Now
Quest Components RF SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 1-ELEMENT, VERY HIGH FREQUENCY BAND, SILICON, N-CHANNEL, JUNCTION FET, TO-92 2
  • 1 $2.3250
  • 3 $2.1390
$2.1390 / $2.3250 Buy Now
DISTI # NTE312
TME Transistor: N-JFET, unipolar, 30V, 15mA, 0.36W, TO92, Igt: 50mA Min Qty: 1 26
  • 1 $1.9300
  • 3 $1.7400
  • 10 $1.5400
  • 25 $1.3800
$1.3800 / $1.9300 Buy Now
Perfect Parts Corporation   4
RFQ

Part Details for NTE312

NTE312 CAD Models

NTE312 Part Data Attributes

NTE312 NTE Electronics Inc
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Compare Parts:
NTE312 NTE Electronics Inc RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Junction FET, TO-92,
Part Life Cycle Code Active
Ihs Manufacturer NTE ELECTRONICS INC
Package Description CYLINDRICAL, O-PBCY-W3
Reach Compliance Code unknown
ECCN Code EAR99
Samacsys Manufacturer NTE ELECTRONICS
Configuration SINGLE
FET Technology JUNCTION
Feedback Cap-Max (Crss) 1 pF
Highest Frequency Band VERY HIGH FREQUENCY BAND
JEDEC-95 Code TO-92
JESD-30 Code O-PBCY-W3
Number of Elements 1
Number of Terminals 3
Operating Mode DEPLETION MODE
Package Body Material PLASTIC/EPOXY
Package Shape ROUND
Package Style CYLINDRICAL
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 0.36 W
Power Gain-Min (Gp) 10 dB
Qualification Status Not Qualified
Surface Mount NO
Terminal Form WIRE
Terminal Position BOTTOM
Transistor Application AMPLIFIER
Transistor Element Material SILICON

Alternate Parts for NTE312

This table gives cross-reference parts and alternative options found for NTE312. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NTE312, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
2N5484RLRE UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-92 Motorola Mobility LLC NTE312 vs 2N5484RLRE
2SK613-3 RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Junction FET, M-232, 3 PIN Sony Semiconductor NTE312 vs 2SK613-3
2N5484-T/R TRANSISTOR UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-92, FET RF Small Signal NXP Semiconductors NTE312 vs 2N5484-T/R
2N5484/D74Z-J22Z VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-92, 3 PIN Texas Instruments NTE312 vs 2N5484/D74Z-J22Z
2N5484/D26Z-J14Z VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-92, 3 PIN Texas Instruments NTE312 vs 2N5484/D26Z-J14Z
2N5484/D26Z-J25Z VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-92, 3 PIN Texas Instruments NTE312 vs 2N5484/D26Z-J25Z
2N5484D27Z RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Junction FET, TO-92 Fairchild Semiconductor Corporation NTE312 vs 2N5484D27Z
2SK315E RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Junction FET, SPA, 3 PIN SANYO Electric Co Ltd NTE312 vs 2SK315E
2SK54 RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Junction FET, TO-92 Hitachi Ltd NTE312 vs 2SK54
2N5484 UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-92 Texas Instruments NTE312 vs 2N5484

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