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RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Junction FET, TO-92,
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
29C5294
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Newark | N Channel Jfet, -30V, To-92, Gate Source Breakdown Voltage Max:-30V, Zero Gate Voltage Drain Current Max:15Ma, Gate Source Cutoff Voltage Max:-6V, No. Of Pins:3 Pin, Operating Temperature Max:125°C, Channel Type:N Channel Rohs Compliant: Yes |Nte Electronics NTE312 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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Buy Now | |
DISTI #
2368-NTE312-ND
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DigiKey | JFET N-CH 30V TO92 Min Qty: 1 Lead time: 1 Weeks Container: Bag MARKETPLACE PRODUCT |
115 In Stock |
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$1.4900 / $1.8000 | Buy Now |
DISTI #
70215785
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RS | JFET, -6 V, 50, -30 mA, -30 V, 360 mW, 4000, TO-92 | NTE Electronics Inc. NTE312 RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Container: Bulk | 1 |
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$1.4300 / $1.6600 | Buy Now |
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Quest Components | RF SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 1-ELEMENT, VERY HIGH FREQUENCY BAND, SILICON, N-CHANNEL, JUNCTION FET, TO-92 | 2 |
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$2.1390 / $2.3250 | Buy Now |
DISTI #
NTE312
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TME | Transistor: N-JFET, unipolar, 30V, 15mA, 0.36W, TO92, Igt: 50mA Min Qty: 1 | 26 |
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$1.3800 / $1.9300 | Buy Now |
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Perfect Parts Corporation | 4 |
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RFQ |
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NTE312
NTE Electronics Inc
Buy Now
Datasheet
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NTE312
NTE Electronics Inc
RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Junction FET, TO-92,
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Part Life Cycle Code | Active | |
Ihs Manufacturer | NTE ELECTRONICS INC | |
Package Description | CYLINDRICAL, O-PBCY-W3 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | NTE ELECTRONICS | |
Configuration | SINGLE | |
FET Technology | JUNCTION | |
Feedback Cap-Max (Crss) | 1 pF | |
Highest Frequency Band | VERY HIGH FREQUENCY BAND | |
JEDEC-95 Code | TO-92 | |
JESD-30 Code | O-PBCY-W3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | DEPLETION MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | ROUND | |
Package Style | CYLINDRICAL | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 0.36 W | |
Power Gain-Min (Gp) | 10 dB | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | WIRE | |
Terminal Position | BOTTOM | |
Transistor Application | AMPLIFIER | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for NTE312. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NTE312, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
2N5484RLRE | UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-92 | Motorola Mobility LLC | NTE312 vs 2N5484RLRE |
2SK613-3 | RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Junction FET, M-232, 3 PIN | Sony Semiconductor | NTE312 vs 2SK613-3 |
2N5484-T/R | TRANSISTOR UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-92, FET RF Small Signal | NXP Semiconductors | NTE312 vs 2N5484-T/R |
2N5484/D74Z-J22Z | VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-92, 3 PIN | Texas Instruments | NTE312 vs 2N5484/D74Z-J22Z |
2N5484/D26Z-J14Z | VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-92, 3 PIN | Texas Instruments | NTE312 vs 2N5484/D26Z-J14Z |
2N5484/D26Z-J25Z | VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-92, 3 PIN | Texas Instruments | NTE312 vs 2N5484/D26Z-J25Z |
2N5484D27Z | RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Junction FET, TO-92 | Fairchild Semiconductor Corporation | NTE312 vs 2N5484D27Z |
2SK315E | RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Junction FET, SPA, 3 PIN | SANYO Electric Co Ltd | NTE312 vs 2SK315E |
2SK54 | RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Junction FET, TO-92 | Hitachi Ltd | NTE312 vs 2SK54 |
2N5484 | UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-92 | Texas Instruments | NTE312 vs 2N5484 |