| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| PD57030S-E | STMicroelectronics | $29.5575 | RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | PD57030-E vs PD57030S-E |
| PD57030STR-E | STMicroelectronics | Check for Price | RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | PD57030-E vs PD57030STR-E |
| PD57030 | STMicroelectronics | Check for Price | RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | PD57030-E vs PD57030 |
Part Details for PD57030-E by STMicroelectronics
Results Overview of PD57030-E by STMicroelectronics
- Distributor Offerings: (7 listings)
- Number of FFF Equivalents: (0 replacements)
- Tariff Estimator: (Not Available)
- Number of Functional Equivalents: (3 options)
- CAD Models: (Request Part)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Space Technology
Aerospace and Defense
Transportation and Logistics
Renewable Energy
Automotive
Robotics and Drones
PD57030-E Information
PD57030-E by STMicroelectronics is an RF Power Field-Effect Transistor.
RF Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for PD57030-E
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
93AM9359
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Newark | Rf Fet, 4A, 65V, Powerso-10Rf, |Stmicroelectronics PD57030-E RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 0 |
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$29.4884 / $40.1028 | Buy Now |
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DISTI #
93477383
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Verical | Trans RF MOSFET N-CH 65V 4A 3-Pin PowerSO-10RF (Formed lead) Tube RoHS: Exempt Min Qty: 1 Package Multiple: 1 Date Code: 2527 | Americas - 1 |
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$34.5566 / $49.4590 | Buy Now |
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STMicroelectronics | RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs COO: Malaysia Min Qty: 1 | 480 |
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$36.1700 / $43.9100 | Buy Now |
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Future Electronics | N-Channel 65 V Formed Leads Enhancement Mode Lateral Mosfet - POWERSO-10RF RoHS: Compliant pbFree: Yes Min Qty: 400 Package Multiple: 50 Lead time: 23 Weeks Container: Box | 0Box |
|
$31.2000 / $32.7600 | Buy Now |
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Future Electronics | N-Channel 65 V Formed Leads Enhancement Mode Lateral Mosfet - POWERSO-10RF RoHS: Compliant pbFree: Yes Min Qty: 400 Package Multiple: 50 Lead time: 23 Weeks Container: Box | 0Box |
|
$31.2000 / $31.5400 | Buy Now |
|
DISTI #
PD57030-E
|
TME | Transistor: N-MOSFET, unipolar, 65V, 4A, 52.8W, PowerSO10RF Min Qty: 1 | 0 |
|
$37.3900 / $46.1100 | RFQ |
|
|
Vyrian | RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | 7848 |
|
RFQ |
PD57030-E Part Data Attributes
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PD57030-E
STMicroelectronics
Buy Now
Datasheet
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Compare Parts:
PD57030-E
STMicroelectronics
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Part Package Code | SOT | |
| Package Description | Rohs Compliant, Power, Plastic, So-2 | |
| Pin Count | 2 | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 23 Weeks | |
| Additional Feature | High Reliability | |
| Case Connection | Source | |
| Configuration | Single | |
| DS Breakdown Voltage-Min | 65 V | |
| Drain Current-Max (ID) | 4 A | |
| FET Technology | Metal-Oxide Semiconductor | |
| Feedback Cap-Max (Crss) | 2.3 Pf | |
| Highest Frequency Band | Ultra High Frequency Band | |
| JESD-30 Code | R-PDSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 3 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | Enhancement Mode | |
| Operating Temperature-Max | 165 °C | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | Small Outline | |
| Packing Method | Tube | |
| Peak Reflow Temperature (Cel) | 250 | |
| Polarity/Channel Type | N-Channel | |
| Power Dissipation-Max (Abs) | 52.8 W | |
| Power Gain-Min (Gp) | 13 Db | |
| Qualification Status | Not Qualified | |
| Surface Mount | Yes | |
| Terminal Finish | Matte Tin (Sn) - Annealed | |
| Terminal Form | Gull Wing | |
| Terminal Position | Dual | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | Amplifier | |
| Transistor Element Material | Silicon |
Alternate Parts for PD57030-E
This table gives cross-reference parts and alternative options found for PD57030-E. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of PD57030-E, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
PD57030-E Frequently Asked Questions (FAQ)
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STMicroelectronics recommends a 2-layer or 4-layer PCB with a solid ground plane and a thermal relief pattern under the device to ensure optimal thermal performance.
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To ensure reliable operation in high-temperature environments, it's essential to follow the recommended thermal design guidelines, use a suitable thermal interface material, and ensure proper airflow around the device.
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Exceeding the maximum junction temperature (Tj) rating can lead to reduced device lifespan, decreased performance, and potentially even device failure. It's crucial to ensure the device operates within the recommended temperature range.
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To ensure ESD protection, follow proper handling and storage procedures, use ESD-protective packaging, and implement ESD-protection circuits in the system design, such as TVS diodes or ESD-protection ICs.
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STMicroelectronics recommends following the JEDEC J-STD-020 standard for soldering and rework conditions to ensure reliable assembly and minimize the risk of device damage.