| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| PD57070S-E | STMicroelectronics | Check for Price | RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | PD57070STR-E vs PD57070S-E |
Part Details for PD57070STR-E by STMicroelectronics
Results Overview of PD57070STR-E by STMicroelectronics
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (1 replacement)
- Tariff Estimator: (Not Available)
- Number of Functional Equivalents: (4 options)
- CAD Models: (Request Part)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Medical Imaging
Robotics and Drones
PD57070STR-E Information
PD57070STR-E by STMicroelectronics is an RF Power Field-Effect Transistor.
RF Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
PD57070STR-E Part Data Attributes
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PD57070STR-E
STMicroelectronics
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Datasheet
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PD57070STR-E
STMicroelectronics
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Part Package Code | SOT | |
| Package Description | Rohs Compliant, Plastic, Powerso-10rf, 2 Pin | |
| Pin Count | 10 | |
| ECCN Code | EAR99 | |
| Case Connection | Source | |
| Configuration | Single | |
| DS Breakdown Voltage-Min | 65 V | |
| Drain Current-Max (ID) | 7 A | |
| FET Technology | Metal-Oxide Semiconductor | |
| Feedback Cap-Max (Crss) | 3.8 Pf | |
| Highest Frequency Band | Ultra High Frequency Band | |
| JESD-30 Code | R-PDSO-F2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 3 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | Enhancement Mode | |
| Operating Temperature-Max | 165 °C | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | Small Outline | |
| Peak Reflow Temperature (Cel) | 250 | |
| Polarity/Channel Type | N-Channel | |
| Power Dissipation-Max (Abs) | 95 W | |
| Power Gain-Min (Gp) | 13 Db | |
| Qualification Status | Not Qualified | |
| Surface Mount | Yes | |
| Terminal Finish | Matte Tin (Sn) - Annealed | |
| Terminal Form | Flat | |
| Terminal Position | Dual | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | Amplifier | |
| Transistor Element Material | Silicon |
Alternate Parts for PD57070STR-E
This table gives cross-reference parts and alternative options found for PD57070STR-E. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of PD57070STR-E, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.