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Part Details for RFD14N05L by onsemi
Overview of RFD14N05L by onsemi
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for RFD14N05L
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
58K2118
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Newark | N Channel Mosfet, 50V, 14A To-251Aa, Channel Type:N Channel, Drain Source Voltage Vds:50V, Continuous Drain Current Id:14A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:5V, Gate Source Threshold Voltage Max:2V, Msl:- Rohs Compliant: Yes |Onsemi RFD14N05L Min Qty: 1800 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
|
Buy Now | |
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DISTI #
26AC3183
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Newark | Fet 50V 100 Mohms Ipak Rohs Compliant: Yes |Onsemi RFD14N05L Min Qty: 75 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$0.6350 / $0.6660 | Buy Now |
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DISTI #
1017789
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element14 Asia-Pacific | MOSFET, N, LOGIC, I-PAK RoHS: Compliant Min Qty: 1 Container: Each | 0 |
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$0.3683 / $0.6839 | Buy Now |
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DISTI #
1017789
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Farnell | MOSFET, N, LOGIC, I-PAK RoHS: Compliant Min Qty: 1 Lead time: 51 Weeks, 1 Days Container: Each | 0 |
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$0.4016 / $0.9991 | Buy Now |
Part Details for RFD14N05L
RFD14N05L CAD Models
RFD14N05L Part Data Attributes
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RFD14N05L
onsemi
Buy Now
Datasheet
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Compare Parts:
RFD14N05L
onsemi
N-Channel Logic Level Power MOSFET 50V, 14A, 100mΩ, 1800-TUBE
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| Pbfree Code | Yes | |
| Part Life Cycle Code | End Of Life | |
| Ihs Manufacturer | ONSEMI | |
| Package Description | TO-251, 3 PIN | |
| Manufacturer Package Code | 369AR | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 4 Weeks | |
| Samacsys Manufacturer | onsemi | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 50 V | |
| Drain Current-Max (ID) | 14 A | |
| Drain-source On Resistance-Max | 0.1 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-251AA | |
| JESD-30 Code | R-PSIP-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 48 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for RFD14N05L
This table gives cross-reference parts and alternative options found for RFD14N05L. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of RFD14N05L, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| RFD14N06L | 14A, 60V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA | Intersil Corporation | RFD14N05L vs RFD14N06L |
| MTP15N05EL | 15A, 50V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | Motorola Mobility LLC | RFD14N05L vs MTP15N05EL |
| RFP14N05L | 14A, 50V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220AB, 3 PIN | Rochester Electronics LLC | RFD14N05L vs RFP14N05L |
| BUZ71L | 12A, 50V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | Motorola Mobility LLC | RFD14N05L vs BUZ71L |
| RFP14N05L | Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | Harris Semiconductor | RFD14N05L vs RFP14N05L |
| RFD14N06L | Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | Harris Semiconductor | RFD14N05L vs RFD14N06L |
| RFD14N05 | 14A, 50V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA | Intersil Corporation | RFD14N05L vs RFD14N05 |
| RFD14N05 | Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, TO-251AA, 3 PIN | Fairchild Semiconductor Corporation | RFD14N05L vs RFD14N05 |
| BUK553-60B | TRANSISTOR 20 A, 60 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power | NXP Semiconductors | RFD14N05L vs BUK553-60B |
| RFD14N05 | Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | Harris Semiconductor | RFD14N05L vs RFD14N05 |