Datasheets
SI2308DS-T1-GE3 by:

Small Signal Field-Effect Transistor, 2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, ROHS COMPLIANT, TO-236, 3 PIN

Part Details for SI2308DS-T1-GE3 by Vishay Siliconix

Overview of SI2308DS-T1-GE3 by Vishay Siliconix

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Part Details for SI2308DS-T1-GE3

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SI2308DS-T1-GE3 Part Data Attributes

SI2308DS-T1-GE3 Vishay Siliconix
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SI2308DS-T1-GE3 Vishay Siliconix Small Signal Field-Effect Transistor, 2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, ROHS COMPLIANT, TO-236, 3 PIN
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer VISHAY SILICONIX
Part Package Code SOT-23
Package Description SMALL OUTLINE, R-PDSO-G3
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Vishay
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 2 A
Drain-source On Resistance-Max 0.16 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-236AB
JESD-30 Code R-PDSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Transistor Element Material SILICON

Alternate Parts for SI2308DS-T1-GE3

This table gives cross-reference parts and alternative options found for SI2308DS-T1-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI2308DS-T1-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
SI2308DS-T1 Small Signal Field-Effect Transistor, 2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, TO-236, 3 PIN Vishay Siliconix SI2308DS-T1-GE3 vs SI2308DS-T1
Part Number Description Manufacturer Compare
RSR020N06HZGTL Small Signal Field-Effect Transistor, ROHM Semiconductor SI2308DS-T1-GE3 vs RSR020N06HZGTL
IRFL014NHR Small Signal Field-Effect Transistor, 1.9A I(D), 55V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, TO-261AA, 4 PIN International Rectifier SI2308DS-T1-GE3 vs IRFL014NHR
SI2308CDS-T1-GE3 Small Signal Field-Effect Transistor, Vishay Intertechnologies SI2308DS-T1-GE3 vs SI2308CDS-T1-GE3
SI2308BDS-T1-BE3 Small Signal Field-Effect Transistor, Vishay Intertechnologies SI2308DS-T1-GE3 vs SI2308BDS-T1-BE3
SI2308BDS-T1-GE3 Small Signal Field-Effect Transistor, 1.9A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, Vishay Intertechnologies SI2308DS-T1-GE3 vs SI2308BDS-T1-GE3
SI2308DS-T1-E3 Small Signal Field-Effect Transistor, 2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, LEAD FREE, TO-236, 3 PIN Vishay Siliconix SI2308DS-T1-GE3 vs SI2308DS-T1-E3
SI2308DS-T1 Small Signal Field-Effect Transistor, 2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, TO-236, 3 PIN Vishay Siliconix SI2308DS-T1-GE3 vs SI2308DS-T1

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