Datasheets
SI2356DS-T1-BE3 by:

Small Signal Field-Effect Transistor, 4.3A I(D), 40V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, TO-236, SOT-23, 3 PIN

Part Details for SI2356DS-T1-BE3 by Vishay Intertechnologies

Overview of SI2356DS-T1-BE3 by Vishay Intertechnologies

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Price & Stock for SI2356DS-T1-BE3

Part # Distributor Description Stock Price Buy
DISTI # 42AJ0579
Newark N-Channel 40-V (D-S) Mosfet |Vishay SI2356DS-T1-BE3 Min Qty: 6000 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 2,500 $0.0960
$0.0960 Buy Now
DISTI # SI2356DS-T1-BE3
Avnet Americas Transistor MOSFET N-CH 40V 4.3A 3-Pin SOT-23 (Alt: SI2356DS-T1-BE3) RoHS: Not Compliant Min Qty: 6000 Package Multiple: 3000 Lead time: 16 Weeks, 0 Days 0
  • 6,000 $0.1135
  • 12,000 $0.1099
  • 18,000 $0.1062
  • 30,000 $0.1019
  • 60,000 $0.0986
  • 300,000 $0.0940
  • 600,000 $0.0894
$0.0894 / $0.1135 Buy Now
DISTI # 78-SI2356DS-T1-BE3
Mouser Electronics MOSFET N-CHANNEL 40-V (D-S) RoHS: Compliant 128674
  • 1 $0.3800
  • 10 $0.3130
  • 100 $0.2130
  • 1,000 $0.1200
  • 3,000 $0.1110
$0.1110 / $0.3800 Buy Now
Future Electronics Si2356DS Series 40 V 3.2 A 51 mOhm Surface Mount N-Channel - SOT-23-3 RoHS: Compliant pbFree: Yes Min Qty: 6000 Package Multiple: 3000 Container: Reel 0
Reel
  • 3,000 $0.0980
  • 9,000 $0.0941
  • 12,000 $0.0932
  • 30,000 $0.0901
  • 45,000 $0.0872
$0.0872 / $0.0980 Buy Now
DISTI # SI2356DS-T1-BE3
TTI MOSFET N-CHANNEL 40-V (D-S) RoHS: Compliant pbFree: Pb-Free Min Qty: 3000 Package Multiple: 3000 Container: Reel Americas - 54000
In Stock
  • 3,000 $0.1100
$0.1100 Buy Now
DISTI # SI2356DS-T1-BE3
Avnet Americas Transistor MOSFET N-CH 40V 4.3A 3-Pin SOT-23 (Alt: SI2356DS-T1-BE3) RoHS: Not Compliant Min Qty: 6000 Package Multiple: 3000 Lead time: 16 Weeks, 0 Days 0
  • 6,000 $0.1135
  • 12,000 $0.1099
  • 18,000 $0.1062
  • 30,000 $0.1019
  • 60,000 $0.0986
  • 300,000 $0.0940
  • 600,000 $0.0894
$0.0894 / $0.1135 Buy Now
DISTI # SI2356DS-T1-BE3
TME Transistor: N-MOSFET, TrenchFET®, unipolar, 40V, 4.3A, Idm: 20A Min Qty: 1 0
  • 1 $0.3640
  • 10 $0.2890
  • 25 $0.2520
  • 100 $0.1890
  • 250 $0.1500
  • 500 $0.1260
  • 1,000 $0.1210
  • 3,000 $0.1180
$0.1180 / $0.3640 RFQ
DISTI # SI2356DS-T1-BE3
Avnet Americas Transistor MOSFET N-CH 40V 4.3A 3-Pin SOT-23 (Alt: SI2356DS-T1-BE3) RoHS: Not Compliant Min Qty: 6000 Package Multiple: 3000 Lead time: 16 Weeks, 0 Days 0
  • 6,000 $0.1135
  • 12,000 $0.1099
  • 18,000 $0.1062
  • 30,000 $0.1019
  • 60,000 $0.0986
  • 300,000 $0.0940
  • 600,000 $0.0894
$0.0894 / $0.1135 Buy Now

Part Details for SI2356DS-T1-BE3

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SI2356DS-T1-BE3 Part Data Attributes

SI2356DS-T1-BE3 Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
SI2356DS-T1-BE3 Vishay Intertechnologies Small Signal Field-Effect Transistor, 4.3A I(D), 40V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, TO-236, SOT-23, 3 PIN
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Package Description TO-236, SOT-23, 3 PIN
Reach Compliance Code compliant
Factory Lead Time 16 Weeks
Samacsys Manufacturer Vishay
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 40 V
Drain Current-Max (ID) 4.3 A
Drain-source On Resistance-Max 0.051 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 17 pF
JEDEC-95 Code TO-236AB
JESD-30 Code R-PDSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 1.7 W
Surface Mount YES
Terminal Finish TIN
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for SI2356DS-T1-BE3

This table gives cross-reference parts and alternative options found for SI2356DS-T1-BE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI2356DS-T1-BE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
SI2356DS-T1-GE3 Small Signal Field-Effect Transistor, 4.3A I(D), 40V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, HALOGEN FREE AND ROHS COMPLIANT, TO-236, 3 PIN Vishay Intertechnologies SI2356DS-T1-BE3 vs SI2356DS-T1-GE3
Part Number Description Manufacturer Compare
SI2356DS-T1-GE3 Small Signal Field-Effect Transistor, 4.3A I(D), 40V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, HALOGEN FREE AND ROHS COMPLIANT, TO-236, 3 PIN Vishay Intertechnologies SI2356DS-T1-BE3 vs SI2356DS-T1-GE3

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