Part Details for SI3469DV-T1-GE3 by Vishay Intertechnologies
Overview of SI3469DV-T1-GE3 by Vishay Intertechnologies
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Internet of Things (IoT)
Computing and Data Storage
Smart Cities
Electronic Manufacturing
Price & Stock for SI3469DV-T1-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
35R6212
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Newark | P Channel Mosfet, -20V, 6.7A, Tsop, Channel Type:P Channel, Drain Source Voltage Vds:20V, Continuous Drain Current Id:6.7A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:1V Rohs Compliant: Yes |Vishay SI3469DV-T1-GE3 Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
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$0.5800 | Buy Now |
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DISTI #
SI3469DV-T1-GE3
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Avnet Americas | Trans MOSFET P-CH 20V 5A 6-Pin TSOP T/R - Tape and Reel (Alt: SI3469DV-T1-GE3) RoHS: Not Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 9 Weeks, 0 Days Container: Reel | 0 |
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$0.4185 / $0.5316 | Buy Now |
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Future Electronics | RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 | 0 |
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$0.4140 | Buy Now |
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DISTI #
SI3469DV-T1-GE3
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TTI | MOSFET 20V 6.7A 2.0W 30mohm @ 10V RoHS: Compliant pbFree: Pb-Free Min Qty: 3000 Package Multiple: 3000 Container: Reel | Americas - 0 |
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$0.3880 / $0.4110 | Buy Now |
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DISTI #
SI3469DV-T1-GE3
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Avnet Americas | Trans MOSFET P-CH 20V 5A 6-Pin TSOP T/R - Tape and Reel (Alt: SI3469DV-T1-GE3) RoHS: Not Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 9 Weeks, 0 Days Container: Reel | 0 |
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$0.4185 / $0.5316 | Buy Now |
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DISTI #
SI3469DV-T1-GE3
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EBV Elektronik | (Alt: SI3469DV-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 10 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for SI3469DV-T1-GE3
SI3469DV-T1-GE3 CAD Models
SI3469DV-T1-GE3 Part Data Attributes:
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SI3469DV-T1-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SI3469DV-T1-GE3
Vishay Intertechnologies
Small Signal Field-Effect Transistor, 5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-193AA, MO-193C, TSOP-6
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| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | MO-193C, TSOP-6 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Vishay | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 20 V | |
| Drain Current-Max (ID) | 5 A | |
| Drain-source On Resistance-Max | 0.03 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | MO-193AA | |
| JESD-30 Code | R-PDSO-G6 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 6 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 1.14 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for SI3469DV-T1-GE3
This table gives cross-reference parts and alternative options found for SI3469DV-T1-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI3469DV-T1-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| FDC602P | P-Channel PowerTrench® MOSFET, 2.5V Specified, -20V, -5.5A, 35mΩ, 3000-REEL | onsemi | SI3469DV-T1-GE3 vs FDC602P |
| SI3445DVD87Z | Small Signal Field-Effect Transistor, 5.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6 | Fairchild Semiconductor Corporation | SI3469DV-T1-GE3 vs SI3445DVD87Z |
| SI3445DVS62Z | Small Signal Field-Effect Transistor, 5.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6 | Fairchild Semiconductor Corporation | SI3469DV-T1-GE3 vs SI3445DVS62Z |
| FDC604P | P-Channel PowerTrench® MOSFET, 1.8V Specified, -20V, -5.5A, 33mΩ, 3000-REEL | onsemi | SI3469DV-T1-GE3 vs FDC604P |
| SI3445DVD84Z | Small Signal Field-Effect Transistor, 5.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6 | Fairchild Semiconductor Corporation | SI3469DV-T1-GE3 vs SI3445DVD84Z |
| FDC604PD87Z | Small Signal Field-Effect Transistor, 5.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6 | Fairchild Semiconductor Corporation | SI3469DV-T1-GE3 vs FDC604PD87Z |
| FDC602PD87Z | Small Signal Field-Effect Transistor, 5.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6 | Fairchild Semiconductor Corporation | SI3469DV-T1-GE3 vs FDC602PD87Z |
| FDC602P | Small Signal Field-Effect Transistor, 5.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SUPERSOT-6 | Fairchild Semiconductor Corporation | SI3469DV-T1-GE3 vs FDC602P |
| STT5PF20V | 5000mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TSOP-6 | STMicroelectronics | SI3469DV-T1-GE3 vs STT5PF20V |
| FDC604P | Small Signal Field-Effect Transistor, 5.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6 | Fairchild Semiconductor Corporation | SI3469DV-T1-GE3 vs FDC604P |