Part Details for SI4946BEY-T1-GE3 by Vishay Intertechnologies
Overview of SI4946BEY-T1-GE3 by Vishay Intertechnologies
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for SI4946BEY-T1-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
01AC4998
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Newark | Mosfet, N-Ch, 60V, 6.5A, 175Deg C, 3.7W, Channel Type:N Channel, Drain Source Voltage Vds N Channel:60V, Drain Source Voltage Vds P Channel:60V, Continuous Drain Current Id N Channel:6.5A, Continuous Drain Current Id P Channel:6.5A Rohs Compliant: Yes |Vishay SI4946BEY-T1-GE3 Min Qty: 5 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 90 |
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$0.9420 / $1.4800 | Buy Now |
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DISTI #
81AC9921
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Newark | Dual N-Channel 60-V (D-S) Mosfet Rohs Compliant: No |Vishay SI4946BEY-T1-GE3 Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Reel | 5000 |
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$0.6790 / $0.8110 | Buy Now |
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DISTI #
15R5136
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Newark | Dual N Channel Mosfet, Full Reel, Channel Type:N Channel, Drain Source Voltage Vds N Channel:60V, Drain Source Voltage Vds P Channel:60V, Continuous Drain Current Id N Channel:6.5A, Continuous Drain Current Id P Channel:6.5A Rohs Compliant: Yes |Vishay SI4946BEY-T1-GE3 Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.6790 / $0.8110 | Buy Now |
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DISTI #
SI4946BEY-T1-GE3
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Avnet Americas | Transistor MOSFET Array Dual N-CH 60V 6.5A 8-Pin SOIC T/R - Tape and Reel (Alt: SI4946BEY-T1-GE3) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 9 Weeks, 0 Days Container: Reel | 5000 |
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$0.4730 / $0.6009 | Buy Now |
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DISTI #
SI4946BEY-T1-GE3
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Avnet Americas | Transistor MOSFET Array Dual N-CH 60V 6.5A 8-Pin SOIC T/R - Tape and Reel (Alt: SI4946BEY-T1-GE3) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Container: Reel | 0 |
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$0.4730 / $0.5852 | Buy Now |
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DISTI #
781-SI4946BEY-GE3
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Mouser Electronics | MOSFET 60V 6.5A 3.7W 41mohm @ 10V RoHS: Compliant | 8200 |
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$0.6230 / $1.4200 | Buy Now |
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Future Electronics | DUAL N-CH MOSFET SO-8 60V 41MOHM @ 10V 175C- LEAD(PB) AND HALOGEN FREE RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Container: Reel | 7500Reel |
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$0.5500 / $0.5800 | Buy Now |
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Future Electronics | DUAL N-CH MOSFET SO-8 60V 41MOHM @ 10V 175C- LEAD(PB) AND HALOGEN FREE RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Container: Reel | 0Reel |
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$0.5500 / $0.5800 | Buy Now |
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Future Electronics | DUAL N-CH MOSFET SO-8 60V 41MOHM @ 10V 175C- LEAD(PB) AND HALOGEN FREE RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Container: Reel | 0Reel |
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$0.4750 / $0.5000 | Buy Now |
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DISTI #
67568580
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Verical | Trans MOSFET N-CH 60V 6.5A 8-Pin SOIC N T/R Min Qty: 2500 Package Multiple: 2500 Date Code: 2310 | Americas - 5000 |
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$0.7607 | Buy Now |
Part Details for SI4946BEY-T1-GE3
SI4946BEY-T1-GE3 CAD Models
SI4946BEY-T1-GE3 Part Data Attributes
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SI4946BEY-T1-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SI4946BEY-T1-GE3
Vishay Intertechnologies
Power Field-Effect Transistor, 6.5A I(D), 60V, 0.041ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, MS-012, SOIC, SOP-8
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| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | MS-012, SOIC, SOP-8 | |
| Reach Compliance Code | compliant | |
| Samacsys Manufacturer | Vishay | |
| Avalanche Energy Rating (Eas) | 7.2 mJ | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 6.5 A | |
| Drain-source On Resistance-Max | 0.041 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 44 pF | |
| JEDEC-95 Code | MS-012AA | |
| JESD-30 Code | R-PDSO-G8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 2 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 3.7 W | |
| Pulsed Drain Current-Max (IDM) | 30 A | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 55 ns | |
| Turn-on Time-Max (ton) | 35 ns |
Alternate Parts for SI4946BEY-T1-GE3
This table gives cross-reference parts and alternative options found for SI4946BEY-T1-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI4946BEY-T1-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| DMNH6022SSD-13 | Power Field-Effect Transistor, 7.1A I(D), 60V, 0.03ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8 | Diodes Incorporated | SI4946BEY-T1-GE3 vs DMNH6022SSD-13 |
| SI4946BEY-T1-E3 | Power Field-Effect Transistor, 6.5A I(D), 60V, 0.041ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, MS-012, SOIC, SOP-8 | Vishay Intertechnologies | SI4946BEY-T1-GE3 vs SI4946BEY-T1-E3 |