Part Details for SIHFR9014TR-GE3 by Vishay Intertechnologies
Overview of SIHFR9014TR-GE3 by Vishay Intertechnologies
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for SIHFR9014TR-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SIHFR9014TR-GE3
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TME | Transistor: P-MOSFET, unipolar, -60V, -3.2A, Idm: -20A, 25W Min Qty: 1 | 0 |
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$0.3870 / $0.7730 | RFQ |
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DISTI #
SIHFR9014TR-GE3
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EBV Elektronik | Transistor MOSFET P-CH 60V 5.1A 3-Pin TO-252 T/R (Alt: SIHFR9014TR-GE3) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 9 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for SIHFR9014TR-GE3
SIHFR9014TR-GE3 CAD Models
SIHFR9014TR-GE3 Part Data Attributes:
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SIHFR9014TR-GE3
Vishay Intertechnologies
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Datasheet
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Compare Parts:
SIHFR9014TR-GE3
Vishay Intertechnologies
Power Field-Effect Transistor, 5.1A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252,
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 140 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 5.1 A | |
| Drain-source On Resistance-Max | 0.5 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252 | |
| JESD-30 Code | R-PSSO-G2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 25 W | |
| Pulsed Drain Current-Max (IDM) | 20 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 40 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for SIHFR9014TR-GE3
This table gives cross-reference parts and alternative options found for SIHFR9014TR-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SIHFR9014TR-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRFR9014TRLPBF | Power Field-Effect Transistor, 5.1A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3 | Vishay Intertechnologies | SIHFR9014TR-GE3 vs IRFR9014TRLPBF |
| IRFR9014TRPBF | Power Field-Effect Transistor, 5.1A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, | Vishay Intertechnologies | SIHFR9014TR-GE3 vs IRFR9014TRPBF |
| IRFR9014TRPBF | TRANSISTOR 5.1 A, 60 V, 0.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, ROHS COMPLIANT, DPAK-3, FET General Purpose Power | Vishay Siliconix | SIHFR9014TR-GE3 vs IRFR9014TRPBF |
| IRFR9014PBF | Power Field-Effect Transistor, 5.1A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3 | Vishay Intertechnologies | SIHFR9014TR-GE3 vs IRFR9014PBF |
| IRFR9014TRL | Power Field-Effect Transistor, 5.1A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | International Rectifier | SIHFR9014TR-GE3 vs IRFR9014TRL |
| SIHFR9014-GE3 | Power Field-Effect Transistor, 5.1A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, | Vishay Intertechnologies | SIHFR9014TR-GE3 vs SIHFR9014-GE3 |
| IRFR9014TR | Power Field-Effect Transistor, 5.1A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | Vishay Intertechnologies | SIHFR9014TR-GE3 vs IRFR9014TR |
| IRFR9014TRLPBF | Power Field-Effect Transistor, 5.1A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT, DPAK-3 | Vishay Siliconix | SIHFR9014TR-GE3 vs IRFR9014TRLPBF |
| IRFR9014 | Power Field-Effect Transistor, 5.1A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 | Vishay Siliconix | SIHFR9014TR-GE3 vs IRFR9014 |
| IRFR9014 | Power Field-Effect Transistor, 5.1A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, | International Rectifier | SIHFR9014TR-GE3 vs IRFR9014 |