Part Details for SPP77N06S2-12 by Infineon Technologies AG
Overview of SPP77N06S2-12 by Infineon Technologies AG
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Medical Imaging
Robotics and Drones
Price & Stock for SPP77N06S2-12
| Part # | Distributor | Description | Stock | Price | Buy | |
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Chip 1 Exchange | INSTOCK | 2500 |
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RFQ |
Part Details for SPP77N06S2-12
SPP77N06S2-12 CAD Models
SPP77N06S2-12 Part Data Attributes:
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SPP77N06S2-12
Infineon Technologies AG
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Datasheet
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Compare Parts:
SPP77N06S2-12
Infineon Technologies AG
Power Field-Effect Transistor, 80A I(D), 55V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, 3 PIN
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| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | TO-220AB | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Pin Count | 3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 280 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 55 V | |
| Drain Current-Max (ID) | 80 A | |
| Drain-source On Resistance-Max | 0.012 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 140 W | |
| Pulsed Drain Current-Max (IDM) | 320 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Element Material | SILICON |
Alternate Parts for SPP77N06S2-12
This table gives cross-reference parts and alternative options found for SPP77N06S2-12. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SPP77N06S2-12, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IPB120N06NGATMA1 | Power Field-Effect Transistor, 75A I(D), 60V, 0.0117ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3 | Infineon Technologies AG | SPP77N06S2-12 vs IPB120N06NGATMA1 |
| SPB77N06S2-12 | Power Field-Effect Transistor, 80A I(D), 55V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263, 3 PIN | Infineon Technologies AG | SPP77N06S2-12 vs SPB77N06S2-12 |
| MCB85N06Y-TP-HF | Power Field-Effect Transistor, | Micro Commercial Components | SPP77N06S2-12 vs MCB85N06Y-TP-HF |
| STP80N06-10 | 80A, 60V, 0.01ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN | STMicroelectronics | SPP77N06S2-12 vs STP80N06-10 |
| NDB7060LL86Z | Power Field-Effect Transistor, 75A I(D), 60V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | Fairchild Semiconductor Corporation | SPP77N06S2-12 vs NDB7060LL86Z |
| IXFH76N06-11 | Power Field-Effect Transistor, 76A I(D), 60V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN | IXYS Corporation | SPP77N06S2-12 vs IXFH76N06-11 |
| IPB120N06NG | Power Field-Effect Transistor, 75A I(D), 60V, 0.0117ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3 | Infineon Technologies AG | SPP77N06S2-12 vs IPB120N06NG |
| IRF1010EHR | Power Field-Effect Transistor, 75A I(D), 60V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN | International Rectifier | SPP77N06S2-12 vs IRF1010EHR |
| IPB80N06S2L09XT | Power Field-Effect Transistor, 80A I(D), 55V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | Infineon Technologies AG | SPP77N06S2-12 vs IPB80N06S2L09XT |
| TK80F06K3L | TRANSISTOR POWER, FET, FET General Purpose Power | Toshiba America Electronic Components | SPP77N06S2-12 vs TK80F06K3L |