Part Details for SQ2310ES-T1-GE3 by Vishay Siliconix
Overview of SQ2310ES-T1-GE3 by Vishay Siliconix
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (6 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Internet of Things (IoT)
Environmental Monitoring
Financial Technology (Fintech)
Smart Cities
Transportation and Logistics
Energy and Power Systems
Agriculture Technology
Medical Imaging
Telecommunications
Virtual Reality (VR), Augmented Reality (AR), and Vision Systems
Education and Research
Consumer Electronics
Security and Surveillance
Audio and Video Systems
Computing and Data Storage
Healthcare
Entertainment and Gaming
Robotics and Drones
Price & Stock for SQ2310ES-T1-GE3
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
70459598
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RS | 20V 6A 2W | Siliconix / Vishay SQ2310ES-T1-GE3 RoHS: Not Compliant Min Qty: 3000 Package Multiple: 1 Container: Bulk | 0 |
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$0.6700 / $0.7900 | RFQ |
Part Details for SQ2310ES-T1-GE3
SQ2310ES-T1-GE3 CAD Models
SQ2310ES-T1-GE3 Part Data Attributes
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SQ2310ES-T1-GE3
Vishay Siliconix
Buy Now
Datasheet
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Compare Parts:
SQ2310ES-T1-GE3
Vishay Siliconix
SQ2310ES Automotive N-Channel 20 V (D-S) 175 °C MOSFET
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Pbfree Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | VISHAY SILICONIX | |
Part Package Code | SOT-23 | |
Package Description | SMALL OUTLINE, R-PDSO-G3 | |
Pin Count | 3 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Vishay | |
Avalanche Energy Rating (Eas) | 5 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 20 V | |
Drain Current-Max (ID) | 6 A | |
Drain-source On Resistance-Max | 0.03 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 46 pF | |
JEDEC-95 Code | TO-236AB | |
JESD-30 Code | R-PDSO-G3 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 24 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 10 | |
Transistor Element Material | SILICON | |
Turn-off Time-Max (toff) | 46 ns | |
Turn-on Time-Max (ton) | 23 ns |
Alternate Parts for SQ2310ES-T1-GE3
This table gives cross-reference parts and alternative options found for SQ2310ES-T1-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SQ2310ES-T1-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
SI3442CDV-T1-GE3 | Small Signal Field-Effect Transistor, 6.6A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-193AA, HALOGEN FREE AND ROHS COMPLIANT, MO-193C, TSOP-6 | Vishay Intertechnologies | SQ2310ES-T1-GE3 vs SI3442CDV-T1-GE3 |
SI2374DS-T1-GE3 | Small Signal Field-Effect Transistor, 5.9A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 | Vishay Intertechnologies | SQ2310ES-T1-GE3 vs SI2374DS-T1-GE3 |
SI2312CDS-T1-GE3 | Small Signal Field-Effect Transistor, 6A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, TO-236, SOT-23, 3 PIN | Vishay Intertechnologies | SQ2310ES-T1-GE3 vs SI2312CDS-T1-GE3 |
SI2312CDS-T1-GE3 | TRANSISTOR 6000 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3, FET General Purpose Small Signal | Vishay Siliconix | SQ2310ES-T1-GE3 vs SI2312CDS-T1-GE3 |
SQ2310ES-T1_GE3 | Small Signal Field-Effect Transistor, 6A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 | Vishay Intertechnologies | SQ2310ES-T1-GE3 vs SQ2310ES-T1_GE3 |
SI3442CDV-T1-GE3 | TRANSISTOR SMALL SIGNAL, FET, FET General Purpose Small Signal | Vishay Siliconix | SQ2310ES-T1-GE3 vs SI3442CDV-T1-GE3 |