Datasheets
SQJ486EP-T1_GE3 by:

Power Field-Effect Transistor, 30A I(D), 75V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SO-8L, 4 PIN

Part Details for SQJ486EP-T1_GE3 by Vishay Intertechnologies

Overview of SQJ486EP-T1_GE3 by Vishay Intertechnologies

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Applications Consumer Electronics Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for SQJ486EP-T1_GE3

Part # Distributor Description Stock Price Buy
DISTI # SQJ486EP-T1_GE3
Avnet Americas Trans MOSFET N-CH 75V 30A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SQJ486EP-T1_GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 25 Weeks, 0 Days Container: Reel 0
  • 3,000 $0.5977
  • 6,000 $0.5785
  • 12,000 $0.5593
  • 18,000 $0.5367
  • 24,000 $0.5193
  • 30,000 $0.4949
  • 300,000 $0.4705
$0.4705 / $0.5977 Buy Now
DISTI # 78-SQJ486EP-T1_GE3
Mouser Electronics MOSFET N-Channel 75V AEC-Q101 Qualified RoHS: Compliant 21719
  • 1 $1.1600
  • 10 $0.9500
  • 100 $0.7400
  • 500 $0.6270
  • 1,000 $0.5110
  • 3,000 $0.4720
  • 6,000 $0.4570
  • 9,000 $0.4360
$0.4360 / $1.1600 Buy Now
Future Electronics SQJ486EP Series 75 V 30 A Automotive N-Channel Mosfet - PowerPAK® SO-8L RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel 0
Reel
  • 3,000 $0.4600
  • 6,000 $0.4500
  • 9,000 $0.4400
$0.4400 / $0.4600 Buy Now
Future Electronics SQJ486EP Series 75 V 30 A Automotive N-Channel Mosfet - PowerPAK® SO-8L RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel 0
Reel
  • 3,000 $0.4600
  • 6,000 $0.4500
  • 9,000 $0.4400
$0.4400 / $0.4600 Buy Now
Quest Components   86
  • 1 $1.7500
  • 15 $0.8750
  • 70 $0.5250
$0.5250 / $1.7500 Buy Now
DISTI # SQJ486EP-T1_GE3
Avnet Americas Trans MOSFET N-CH 75V 30A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SQJ486EP-T1_GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 25 Weeks, 0 Days Container: Reel 0
  • 3,000 $0.5977
  • 6,000 $0.5785
  • 12,000 $0.5593
  • 18,000 $0.5367
  • 24,000 $0.5193
  • 30,000 $0.4949
  • 300,000 $0.4705
$0.4705 / $0.5977 Buy Now
DISTI # SQJ486EP-T1-GE3
TME Transistor: N-MOSFET, unipolar, 75V, 17A, 56W, PowerPAK® SO8 Min Qty: 1 0
  • 1 $0.9500
  • 5 $0.8500
  • 25 $0.7500
  • 100 $0.6800
  • 500 $0.6300
$0.6300 / $0.9500 RFQ
Chip 1 Exchange INSTOCK 70200
RFQ
DISTI # SQJ486EP-T1_GE3
Avnet Asia Trans MOSFET N-CH 75V 30A 8-Pin PowerPAK SO T/R (Alt: SQJ486EP-T1_GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 27 Weeks, 0 Days 0
RFQ
Chip1Cloud MOSFET N-CH 75V 30A PPAK SO-8 7100
RFQ
CHIPMALL.COM LIMITED Package/EnclosurePowerPAK fet typeN-Channel Drain-source voltage Vds75V Continuous Drain Current Id30A Pd-power dissipation Max56W 42125
  • 3,000 $0.6464
$0.6464 Buy Now
Wuhan P&S 75V,26m��,30A,N-Channel Power MOSFET Min Qty: 1 54000
  • 1 $4.8300
  • 100 $1.6100
  • 500 $1.4900
  • 1,000 $1.4500
$1.4500 / $4.8300 Buy Now

Part Details for SQJ486EP-T1_GE3

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SQJ486EP-T1_GE3 Part Data Attributes:

SQJ486EP-T1_GE3 Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
SQJ486EP-T1_GE3 Vishay Intertechnologies Power Field-Effect Transistor, 30A I(D), 75V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SO-8L, 4 PIN
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Package Description SMALL OUTLINE, R-PSSO-G4
Reach Compliance Code unknown
ECCN Code EAR99
Factory Lead Time 25 Weeks
Samacsys Manufacturer Vishay
Avalanche Energy Rating (Eas) 9 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 75 V
Drain Current-Max (ID) 30 A
Drain-source On Resistance-Max 0.026 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G4
Number of Elements 1
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 120 A
Surface Mount YES
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Element Material SILICON

Alternate Parts for SQJ486EP-T1_GE3

This table gives cross-reference parts and alternative options found for SQJ486EP-T1_GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SQJ486EP-T1_GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
SPD30N08S222NTMA1 Power Field-Effect Transistor, 30A I(D), 75V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, PLASTIC PACKAGE-3 Infineon Technologies AG SQJ486EP-T1_GE3 vs SPD30N08S222NTMA1
AUIRFR2407 Power Field-Effect Transistor, 42A I(D), 75V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3 Infineon Technologies AG SQJ486EP-T1_GE3 vs AUIRFR2407
IRFR2407TRRPBF Power Field-Effect Transistor, Infineon Technologies AG SQJ486EP-T1_GE3 vs IRFR2407TRRPBF
IRFR2407TRRPBF Power Field-Effect Transistor, 30A I(D), 75V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 International Rectifier SQJ486EP-T1_GE3 vs IRFR2407TRRPBF
IPD30N08S2L-21 Power Field-Effect Transistor, 30A I(D), 75V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, PLASTIC, TO-252, 3 PIN Infineon Technologies AG SQJ486EP-T1_GE3 vs IPD30N08S2L-21
AUIRFR2407TRR Power Field-Effect Transistor, 42A I(D), 75V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3 International Rectifier SQJ486EP-T1_GE3 vs AUIRFR2407TRR
IRFR2407 Power Field-Effect Transistor, 30A I(D), 75V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3 Infineon Technologies AG SQJ486EP-T1_GE3 vs IRFR2407
IRFR2407TR Power Field-Effect Transistor, 30A I(D), 75V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3 International Rectifier SQJ486EP-T1_GE3 vs IRFR2407TR
IRFR2407TRPBF Power Field-Effect Transistor, 30A I(D), 75V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 International Rectifier SQJ486EP-T1_GE3 vs IRFR2407TRPBF
SP001556854 Power Field-Effect Transistor, Infineon Technologies AG SQJ486EP-T1_GE3 vs SP001556854

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