There are no models available for this part yet.
Overview of STB80NE06-10T4 by STMicroelectronics
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 0 listings )
- Number of FFF Equivalents: ( 0 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 10 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Available Datasheets
| Part # | Manufacturer | Description | Datasheet |
|---|---|---|---|
| 89HPES10T4G2ZABC8 | Renesas Electronics Corporation | 10-lane, 4-port Gen2 PCIe I/O Expansion Switch | |
| 89HPES10T4G2ZBBC8 | Renesas Electronics Corporation | 10-lane, 4-port Gen2 PCIe I/O Expansion Switch | |
| 89HPES10T4G2ZBBCG | Renesas Electronics Corporation | 10-lane, 4-port Gen2 PCIe I/O Expansion Switch |
CAD Models for STB80NE06-10T4 by STMicroelectronics
Part Data Attributes for STB80NE06-10T4 by STMicroelectronics
|
|
|
|---|---|
|
Rohs Code
|
No
|
|
Part Life Cycle Code
|
Obsolete
|
|
Ihs Manufacturer
|
STMICROELECTRONICS
|
|
Part Package Code
|
D2PAK
|
|
Package Description
|
TO-263, D2PAK-3
|
|
Pin Count
|
4
|
|
Reach Compliance Code
|
not_compliant
|
|
ECCN Code
|
EAR99
|
|
Avalanche Energy Rating (Eas)
|
250 mJ
|
|
Case Connection
|
DRAIN
|
|
Configuration
|
SINGLE WITH BUILT-IN DIODE
|
|
DS Breakdown Voltage-Min
|
60 V
|
|
Drain Current-Max (ID)
|
80 A
|
|
Drain-source On Resistance-Max
|
0.01 Ω
|
|
FET Technology
|
METAL-OXIDE SEMICONDUCTOR
|
|
JEDEC-95 Code
|
TO-263AB
|
|
JESD-30 Code
|
R-PSSO-G2
|
|
JESD-609 Code
|
e0
|
|
Number of Elements
|
1
|
|
Number of Terminals
|
2
|
|
Operating Mode
|
ENHANCEMENT MODE
|
|
Operating Temperature-Max
|
175 °C
|
|
Package Body Material
|
PLASTIC/EPOXY
|
|
Package Shape
|
RECTANGULAR
|
|
Package Style
|
SMALL OUTLINE
|
|
Polarity/Channel Type
|
N-CHANNEL
|
|
Power Dissipation-Max (Abs)
|
150 W
|
|
Pulsed Drain Current-Max (IDM)
|
320 A
|
|
Qualification Status
|
Not Qualified
|
|
Surface Mount
|
YES
|
|
Terminal Finish
|
TIN LEAD
|
|
Terminal Form
|
GULL WING
|
|
Terminal Position
|
SINGLE
|
|
Transistor Application
|
SWITCHING
|
|
Transistor Element Material
|
SILICON
|
Alternate Parts for STB80NE06-10T4
This table gives cross-reference parts and alternative options found for STB80NE06-10T4. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STB80NE06-10T4, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| MCB85N06Y-TP-HF | Power Field-Effect Transistor, | Micro Commercial Components | STB80NE06-10T4 vs MCB85N06Y-TP-HF |
| NDB7060LL86Z | Power Field-Effect Transistor, 75A I(D), 60V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | Fairchild Semiconductor Corporation | STB80NE06-10T4 vs NDB7060LL86Z |
| IPB120N06NGATMA1 | Power Field-Effect Transistor, 75A I(D), 60V, 0.0117ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3 | Infineon Technologies AG | STB80NE06-10T4 vs IPB120N06NGATMA1 |
| IXFH76N06-11 | Power Field-Effect Transistor, 76A I(D), 60V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN | IXYS Corporation | STB80NE06-10T4 vs IXFH76N06-11 |
| STP80N06-10 | 80A, 60V, 0.01ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN | STMicroelectronics | STB80NE06-10T4 vs STP80N06-10 |
| SPB77N06S2-12 | Power Field-Effect Transistor, 80A I(D), 55V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263, 3 PIN | Infineon Technologies AG | STB80NE06-10T4 vs SPB77N06S2-12 |
| IPB80N06S2L09XT | Power Field-Effect Transistor, 80A I(D), 55V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | Infineon Technologies AG | STB80NE06-10T4 vs IPB80N06S2L09XT |
| SPB77N06S212DTMA1 | Power Field-Effect Transistor, 80A I(D), 55V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263, 3 PIN | Infineon Technologies AG | STB80NE06-10T4 vs SPB77N06S212DTMA1 |
| IPB120N06NG | Power Field-Effect Transistor, 75A I(D), 60V, 0.0117ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3 | Infineon Technologies AG | STB80NE06-10T4 vs IPB120N06NG |
| SPB80N06S2L-07 | Power Field-Effect Transistor, 80A I(D), 55V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263, 3 PIN | Infineon Technologies AG | STB80NE06-10T4 vs SPB80N06S2L-07 |