Part Details for STD10NM60N by STMicroelectronics
Results Overview of STD10NM60N by STMicroelectronics
- Distributor Offerings: (26 listings)
- Number of FFF Equivalents: (0 replacements)
- Tariff Estimator: (Not Available)
- Number of Functional Equivalents: (0 options)
- CAD Models: (Available)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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STD10NM60N Information
STD10NM60N by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for STD10NM60N
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
94T3327
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Newark | Mosfet, N Ch, 600V, 8A, Dpak, |Stmicroelectronics STD10NM60N RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 2977 |
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$1.4300 / $3.3800 | Buy Now |
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DISTI #
497-10021-1-ND
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DigiKey | MOSFET N-CH 600V 10A DPAK Min Qty: 1 Container: Cut Tape |
3043 Cut Tape |
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$1.5240 / $4.0200 | Buy Now |
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DISTI #
83687727
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Verical | STD10NM60N STMicroelectronics Transistors MOSFETs N-CH 600V 10A 3-Pin(2+Tab) DPAK T/R - Arrow.com RoHS: Exempt Min Qty: 2500 Package Multiple: 2500 Date Code: 2417 | Americas - 82500 |
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$1.2360 | Buy Now |
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DISTI #
92946842
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Verical | STD10NM60N STMicroelectronics Transistors MOSFETs N-CH 600V 10A 3-Pin(2+Tab) DPAK T/R - Arrow.com RoHS: Exempt Min Qty: 5 Package Multiple: 1 Date Code: 1905 | Americas - 3522 |
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$1.2580 / $1.5120 | Buy Now |
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DISTI #
511-STD10NM60N
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Mouser Electronics | MOSFETs N-channel 600 V Mdmesh 10A RoHS: Compliant | 3628 |
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$1.4200 / $3.1700 | Buy Now |
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DISTI #
V36:1790_06559786
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Arrow Electronics | STD10NM60N STMicroelectronics Transistors MOSFETs N-CH 600V 10A 3-Pin(2+Tab) DPAK T/R - Arrow.com COO: China RoHS: Exempt Min Qty: 2500 Package Multiple: 2500 Lead time: 26 Weeks Date Code: 2417 | Americas - 82500 |
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$1.2360 | Buy Now |
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DISTI #
V72:2272_06559786
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Arrow Electronics | STD10NM60N STMicroelectronics Transistors MOSFETs N-CH 600V 10A 3-Pin(2+Tab) DPAK T/R - Arrow.com COO: China RoHS: Exempt Min Qty: 1 Package Multiple: 1 Lead time: 26 Weeks Date Code: 1905 Container: Cut Strips | Americas - 3522 |
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$1.2580 / $1.5120 | Buy Now |
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DISTI #
V79:2366_26448466
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Arrow Electronics | STD10NM60N STMicroelectronics Transistors MOSFETs N-CH 600V 10A 3-Pin(2+Tab) DPAK T/R - Arrow.com COO: China RoHS: Exempt Min Qty: 1 Package Multiple: 1 Date Code: 1905 | Americas - 1 |
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$0.9961 | Buy Now |
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Future Electronics | Single N-Channel 650 V 70 W 19 nC Silicon Surface Mount Mosfet - TO-252-3 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Lead time: 26 Weeks Container: Reel | 0Reel |
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$3.3300 | Buy Now |
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Future Electronics | Single N-Channel 650 V 70 W 19 nC Silicon Surface Mount Mosfet - TO-252-3 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Lead time: 26 Weeks Container: Reel | 0Reel |
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$3.3300 | Buy Now |
STD10NM60N CAD Models
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STD10NM60N Part Data Attributes
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STD10NM60N
STMicroelectronics
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Datasheet
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STD10NM60N
STMicroelectronics
Power Field-Effect Transistor, 8A I(D), 600V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Part Package Code | TO-252 | |
| Package Description | Dpak-3/2 | |
| Pin Count | 3 | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 14 Weeks | |
| Additional Feature | Avalanche Rated | |
| Avalanche Energy Rating (Eas) | 200 Mj | |
| Case Connection | Drain | |
| Configuration | Single With Built-In Diode | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 8 A | |
| Drain-source On Resistance-Max | 0.55 Ω | |
| FET Technology | Metal-Oxide Semiconductor | |
| Feedback Cap-Max (Crss) | 1.2 Pf | |
| JEDEC-95 Code | TO-252 | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | Enhancement Mode | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | Small Outline | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-Channel | |
| Power Dissipation-Max (Abs) | 70 W | |
| Pulsed Drain Current-Max (IDM) | 32 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | Yes | |
| Terminal Finish | Matte Tin (Sn) - Annealed | |
| Terminal Form | Gull Wing | |
| Terminal Position | Single | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | Switching | |
| Transistor Element Material | Silicon |
STD10NM60N Frequently Asked Questions (FAQ)
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The maximum operating frequency of the STD10NM60N is 100 kHz, but it can be operated at higher frequencies with proper PCB design and layout.
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To ensure proper cooling, make sure to provide a heat sink with a thermal resistance of less than 10°C/W, and ensure good airflow around the device. Additionally, follow the recommended PCB layout and thermal design guidelines.
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The maximum allowed voltage on the gate of the STD10NM60N is ±20V, but it's recommended to keep it within ±15V to ensure reliable operation.
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The STD10NM60N is rated for operation up to 150°C, but it's recommended to derate the device's power handling at high temperatures to ensure reliable operation.
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To protect the STD10NM60N from ESD, follow proper handling and storage procedures, use ESD-protective packaging, and ensure that the device is properly grounded during assembly and testing.