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Part Details for STD10NM60N by STMicroelectronics
Results Overview of STD10NM60N by STMicroelectronics
- Distributor Offerings: (10 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Industrial Automation
Energy and Power Systems
Renewable Energy
Motor control systems
STD10NM60N Information
STD10NM60N by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for STD10NM60N
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
94T3327
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Newark | Mosfet Transistor, N Channel, 10 A, 600 V, 0.53 Ohm, 10 V, 3 V Rohs Compliant: Yes |Stmicroelectronics STD10NM60N RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 3528 |
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$0.4370 / $1.2400 | Buy Now |
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DISTI #
STD10NM60N
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Avnet Americas | Trans MOSFET N-CH 600V 10A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: STD10NM60N) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 16 Weeks, 0 Days Container: Reel | 0 |
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$1.1958 / $1.2705 | Buy Now |
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STMicroelectronics | N-channel 600 V, 0.53 Ohm typ., 10 A, MDmesh II Power MOSFET in DPAK package RoHS: Compliant Min Qty: 1 | 4457 |
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$1.2900 / $2.2500 | Buy Now |
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Bristol Electronics | 9 |
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RFQ | ||
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DISTI #
STD10NM60N
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TME | Transistor: N-MOSFET, unipolar, 600V, 5A, 70W, DPAK Min Qty: 1 | 2219 |
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$0.8100 / $1.7400 | Buy Now |
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DISTI #
STD10NM60N
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Avnet Silica | Trans MOSFET N-CH 600V 10A 3-Pin(2+Tab) DPAK T/R (Alt: STD10NM60N) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 17 Weeks, 0 Days | Silica - 0 |
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Buy Now | |
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Component Electronics, Inc | IN STOCK SHIP TODAY | 52 |
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$2.5000 / $3.8500 | Buy Now |
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DISTI #
STD10NM60N
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EBV Elektronik | Trans MOSFET N-CH 600V 10A 3-Pin(2+Tab) DPAK T/R (Alt: STD10NM60N) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 17 Weeks, 0 Days | EBV - 0 |
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Buy Now | |
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|
LCSC | 650V 10A 0.5510V4A 70W 2V250uA 1 N-channel TO-252-2(DPAK) MOSFETs ROHS | 699 |
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$0.4868 / $0.9437 | Buy Now |
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Win Source Electronics | Trans MOSFET N-CH 600V 10A 3-Pin(2+Tab) DPAK T/R / MOSFET N-CH 600V 10A DPAK | 49849 |
|
$0.5760 / $0.7440 | Buy Now |
Part Details for STD10NM60N
STD10NM60N CAD Models
STD10NM60N Part Data Attributes
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STD10NM60N
STMicroelectronics
Buy Now
Datasheet
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Compare Parts:
STD10NM60N
STMicroelectronics
N-channel 600 V, 0.53 Ohm typ., 10 A, MDmesh II Power MOSFET in DPAK package
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | STMICROELECTRONICS | |
| Part Package Code | TO-252 | |
| Package Description | ROHS COMPLIANT, DPAK-3 | |
| Pin Count | 3 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 16 Weeks | |
| Samacsys Manufacturer | STMicroelectronics | |
| Avalanche Energy Rating (Eas) | 200 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 8 A | |
| Drain-source On Resistance-Max | 0.55 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252 | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 70 W | |
| Pulsed Drain Current-Max (IDM) | 32 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |