| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRFP244B | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 16A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | STD120N4F6 vs IRFP244B |
| NDP506B | National Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 24A I(D), 60V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | STD120N4F6 vs NDP506B |
| STP3NB80 | STMicroelectronics | Check for Price | Power Field-Effect Transistor, 2.6A I(D), 800V, 6.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | STD120N4F6 vs STP3NB80 |
| NDP610BL | Texas Instruments | Check for Price | 24A, 100V, 0.08ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN | STD120N4F6 vs NDP610BL |
| NDB706AEL | Texas Instruments | Check for Price | 75A, 60V, 0.015ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB | STD120N4F6 vs NDB706AEL |
| 2SK3521-01L | Fuji Electric Co Ltd | Check for Price | Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | STD120N4F6 vs 2SK3521-01L |
| STP22NF03L | STMicroelectronics | Check for Price | Power Field-Effect Transistor, 22A I(D), 30V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | STD120N4F6 vs STP22NF03L |
| STP40NE03L-20 | STMicroelectronics | Check for Price | Power Field-Effect Transistor, 40A I(D), 30V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | STD120N4F6 vs STP40NE03L-20 |
| STP5NB80 | STMicroelectronics | Check for Price | Power Field-Effect Transistor, 5A I(D), 800V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | STD120N4F6 vs STP5NB80 |
| FX3AS-06 | Powerex Power Semiconductors | Check for Price | Power Field-Effect Transistor, 3A I(D), 60V, 0.54ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | STD120N4F6 vs FX3AS-06 |
Part Details for STD120N4F6 by STMicroelectronics
Results Overview of STD120N4F6 by STMicroelectronics
- Distributor Offerings: (8 listings)
- Number of FFF Equivalents: (0 replacements)
- Tariff Estimator: (Not Available)
- Number of Functional Equivalents: (10 options)
- CAD Models: (Available)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Automotive
STD120N4F6 Information
STD120N4F6 by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for STD120N4F6
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
47AK6927
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Newark | Mosfet, N-Ch, 40V, 80A, To-252, |Stmicroelectronics STD120N4F6 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 8017 |
|
$1.0300 / $2.5700 | Buy Now |
|
DISTI #
47AK6927RL
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Newark | Mosfet, N-Ch, 40V, 80A, To-252, |Stmicroelectronics STD120N4F6 RoHS: Compliant Min Qty: 100 Package Multiple: 1 Date Code: 0 Container: Tape & Reel | 8017 |
|
$1.0300 / $1.3400 | Buy Now |
|
DISTI #
497-10781-1-ND
|
DigiKey | MOSFET N-CH 40V 80A DPAK Container: Cut Tape |
0 Cut Tape |
|
Buy Now | |
|
DISTI #
497-10781-2-ND
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DigiKey | MOSFET N-CH 40V 80A DPAK Min Qty: 2500 Container: Tape & Reel |
0 Tape & Reel |
|
$0.7650 / $0.8221 | Buy Now |
|
|
STMicroelectronics | N-channel 40 V, 3.5 mOhm, 80 A STripFET F6 Power MOSFET in DPAK package COO: China Min Qty: 1 | 3085 |
|
$0.9800 / $2.6400 | Buy Now |
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Future Electronics | 40 V 3.5 mOhm typ., 80 A N-Channel STripFET™ F6 Power Mosfet - DPAK-3 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Lead time: 20 Weeks Container: Reel | 0Reel |
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$1.2100 / $1.2300 | Buy Now |
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ComSIT USA | Power Field-Effect Transistor, 80A I(D), 40V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 ECCN: EAR99 RoHS: Compliant |
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RFQ | |
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Vyrian | Power Field-Effect Transistor, 80A I(D), 40V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 12638 |
|
RFQ |
STD120N4F6 CAD Models
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STD120N4F6 Part Data Attributes
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STD120N4F6
STMicroelectronics
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Datasheet
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STD120N4F6
STMicroelectronics
Power Field-Effect Transistor, 80A I(D), 40V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Part Package Code | TO-252 | |
| Package Description | Dpak-3 | |
| Pin Count | 3 | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 13 Weeks | |
| Avalanche Energy Rating (Eas) | 394 Mj | |
| Case Connection | Drain | |
| Configuration | Single With Built-In Diode | |
| DS Breakdown Voltage-Min | 40 V | |
| Drain Current-Max (ID) | 80 A | |
| Drain-source On Resistance-Max | 0.004 Ω | |
| FET Technology | Metal-Oxide Semiconductor | |
| Feedback Cap-Max (Crss) | 10 Pf | |
| JEDEC-95 Code | TO-252 | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | Enhancement Mode | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | Small Outline | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-Channel | |
| Power Dissipation-Max (Abs) | 110 W | |
| Pulsed Drain Current-Max (IDM) | 320 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | Yes | |
| Terminal Finish | Matte Tin (Sn) - Annealed | |
| Terminal Form | Gull Wing | |
| Terminal Position | Single | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | Switching | |
| Transistor Element Material | Silicon |
Alternate Parts for STD120N4F6
This table gives cross-reference parts and alternative options found for STD120N4F6. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STD120N4F6, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
STD120N4F6 Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the STD120N4F6 is -40°C to 150°C.
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To ensure proper biasing, connect the gate to a voltage source through a resistor, and connect the source to ground through a resistor. The recommended biasing voltage is typically around 5-10V.
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The maximum current rating for the STD120N4F6 is 120A. However, it's recommended to derate the current to ensure reliable operation and to prevent overheating.
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To protect the STD120N4F6 from overvoltage and overcurrent, use a voltage regulator or a voltage clamp to limit the voltage, and add a current sense resistor and a fuse to detect and interrupt excessive current.
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For optimal thermal management, use a thick copper PCB with a large ground plane, and ensure good airflow around the device. Use thermal vias and a heat sink if possible. Keep the PCB layout compact and symmetrical to minimize parasitic inductance and capacitance.