| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| STP3NB80 | STMicroelectronics | Check for Price | Power Field-Effect Transistor, 2.6A I(D), 800V, 6.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | STD15NF10T4 vs STP3NB80 |
| NDP506B | National Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 24A I(D), 60V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | STD15NF10T4 vs NDP506B |
| BUK465-60A | NXP Semiconductors | Check for Price | Power Field-Effect Transistor, 41A I(D), 60V, 0.038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | STD15NF10T4 vs BUK465-60A |
| STD65N6F3 | STMicroelectronics | Check for Price | Power Field-Effect Transistor, 65A I(D), 60V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | STD15NF10T4 vs STD65N6F3 |
| FQA17N40 | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 17.2A I(D), 400V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | STD15NF10T4 vs FQA17N40 |
| SSS7N60B | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 7A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | STD15NF10T4 vs SSS7N60B |
| IRF620B | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 5A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | STD15NF10T4 vs IRF620B |
| STD7NK30Z | STMicroelectronics | Check for Price | Power Field-Effect Transistor, 5A I(D), 300V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | STD15NF10T4 vs STD7NK30Z |
| SPA16N50C3 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 16A I(D), 500V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | STD15NF10T4 vs SPA16N50C3 |
| PHB23NQ15T/T3 | NXP Semiconductors | Check for Price | Power Field-Effect Transistor, 23A I(D), 150V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | STD15NF10T4 vs PHB23NQ15T/T3 |
Part Details for STD15NF10T4 by STMicroelectronics
Results Overview of STD15NF10T4 by STMicroelectronics
- Distributor Offerings: (26 listings)
- Number of FFF Equivalents: (0 replacements)
- Tariff Estimator: (Not Available)
- Number of Functional Equivalents: (10 options)
- CAD Models: (Available)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
STD15NF10T4 Information
STD15NF10T4 by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for STD15NF10T4
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
33R1145RL
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Newark | Mosfet, N, |Stmicroelectronics STD15NF10T4 RoHS: Compliant Min Qty: 100 Package Multiple: 1 Date Code: 0 Container: Tape & Reel | 4591 |
|
$0.4272 / $0.6270 | Buy Now |
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DISTI #
33R1145
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Newark | Mosfet, N, |Stmicroelectronics STD15NF10T4 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 4591 |
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$0.4272 / $1.3582 | Buy Now |
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DISTI #
86AK6463
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Newark | Mosfet, N, |Stmicroelectronics STD15NF10T4 RoHS: Compliant Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Tape & Reel | 0 |
|
$0.3596 / $0.4201 | Buy Now |
|
DISTI #
91588277
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Verical | Trans MOSFET N-CH 100V 23A 3-Pin(2+Tab) DPAK T/R RoHS: Exempt Min Qty: 2500 Package Multiple: 2500 Date Code: 2520 | Americas - 20000 |
|
$0.3143 / $0.3250 | Buy Now |
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DISTI #
89498558
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Verical | Trans MOSFET N-CH 100V 23A 3-Pin(2+Tab) DPAK T/R RoHS: Exempt Min Qty: 23 Package Multiple: 1 Date Code: 1511 | Americas - 1990 |
|
$0.3323 | Buy Now |
|
DISTI #
511-STD15NF10
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Mouser Electronics | MOSFETs N-Ch 100 Volt 15 Amp RoHS: Compliant | 11119 |
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$0.4810 / $1.8100 | Buy Now |
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DISTI #
E02:0323_00211454
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Arrow Electronics | Trans MOSFET N-CH 100V 23A 3-Pin(2+Tab) DPAK T/R RoHS: Exempt Min Qty: 2500 Package Multiple: 2500 Lead time: 15 Weeks Date Code: 2520 | Europe - 20000 |
|
$0.3144 / $0.3252 | Buy Now |
|
DISTI #
V72:2272_06559814
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Arrow Electronics | Trans MOSFET N-CH 100V 23A 3-Pin(2+Tab) DPAK T/R COO: Singapore RoHS: Exempt Min Qty: 1 Package Multiple: 1 Lead time: 15 Weeks Date Code: 1511 Container: Cut Strips | Americas - 1990 |
|
$0.3323 | Buy Now |
|
|
STMicroelectronics | N-channel 100 V, 0.06 Ohm typ., 23 A StripFET II Power MOSFET in a DPAK package COO: Singapore Min Qty: 1 | 17677 |
|
$0.5800 / $1.8100 | Buy Now |
|
|
Future Electronics | N-Channel 100 V 0.065 Ohm Surface Mount STripFET™ II Power MosFet - TO-252-3 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Lead time: 15 Weeks Container: Reel | 0Reel |
|
$0.4750 / $0.4950 | Buy Now |
STD15NF10T4 CAD Models
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STD15NF10T4 Part Data Attributes
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STD15NF10T4
STMicroelectronics
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Datasheet
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STD15NF10T4
STMicroelectronics
Power Field-Effect Transistor, 15A I(D), 100V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Part Package Code | TO-252 | |
| Package Description | Dpak-3 | |
| Pin Count | 3 | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 13 Weeks | |
| Avalanche Energy Rating (Eas) | 75 Mj | |
| Case Connection | Drain | |
| Configuration | Single With Built-In Diode | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 15 A | |
| Drain-source On Resistance-Max | 0.08 Ω | |
| FET Technology | Metal-Oxide Semiconductor | |
| Feedback Cap-Max (Crss) | 10 Pf | |
| JEDEC-95 Code | TO-252 | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | Enhancement Mode | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | Small Outline | |
| Packing Method | Tr | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-Channel | |
| Power Dissipation-Max (Abs) | 70 W | |
| Pulsed Drain Current-Max (IDM) | 60 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | Yes | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | Gull Wing | |
| Terminal Position | Single | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | Switching | |
| Transistor Element Material | Silicon |
Alternate Parts for STD15NF10T4
This table gives cross-reference parts and alternative options found for STD15NF10T4. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STD15NF10T4, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
STD15NF10T4 Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the STD15NF10T4 is -55°C to 150°C.
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To ensure proper biasing, connect the gate to a voltage source through a resistor, and connect the source to ground through a resistor. The recommended biasing voltage is typically around 10-15V.
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The maximum current rating for the STD15NF10T4 is 15A.
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To protect the STD15NF10T4 from overvoltage and overcurrent, use a voltage regulator to regulate the input voltage, and add a current limiter or fuse to prevent excessive current.
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The typical turn-on and turn-off time for the STD15NF10T4 is around 10-20ns.