| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| FQU4N25TU | Rochester Electronics LLC | Check for Price | 3A, 250V, 1.75ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251, IPAK-3 | STD2NB25-1 vs FQU4N25TU |
| STD3NB30 | STMicroelectronics | Check for Price | Power Field-Effect Transistor, 3.2A I(D), 300V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | STD2NB25-1 vs STD3NB30 |
| IRFU214A | Samsung Semiconductor | Check for Price | Power Field-Effect Transistor, 2.2A I(D), 250V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | STD2NB25-1 vs IRFU214A |
| IRFU214A | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 2.2A I(D), 250V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | STD2NB25-1 vs IRFU214A |
| STD3NB30T4 | STMicroelectronics | Check for Price | Power Field-Effect Transistor, 3.2A I(D), 300V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | STD2NB25-1 vs STD3NB30T4 |
| STD3N30-1 | STMicroelectronics | Check for Price | Power Field-Effect Transistor, 3A I(D), 300V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | STD2NB25-1 vs STD3N30-1 |
Part Details for STD2NB25-1 by STMicroelectronics
Results Overview of STD2NB25-1 by STMicroelectronics
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- Tariff Estimator: (Not Available)
- Number of Functional Equivalents: (6 options)
- CAD Models: (Request Part)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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STD2NB25-1 Information
STD2NB25-1 by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
STD2NB25-1 Part Data Attributes
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STD2NB25-1
STMicroelectronics
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Datasheet
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STD2NB25-1
STMicroelectronics
Power Field-Effect Transistor, 2A I(D), 250V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
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| Part Life Cycle Code | Obsolete | |
| Part Package Code | TO-251 | |
| Package Description | To-251, Ipak-3 | |
| Pin Count | 3 | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 50 Mj | |
| Configuration | Single With Built-In Diode | |
| DS Breakdown Voltage-Min | 250 V | |
| Drain Current-Max (ID) | 2 A | |
| Drain-source On Resistance-Max | 2 Ω | |
| FET Technology | Metal-Oxide Semiconductor | |
| Feedback Cap-Max (Crss) | 10 Pf | |
| JEDEC-95 Code | TO-251 | |
| JESD-30 Code | R-PSIP-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | Enhancement Mode | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | In-Line | |
| Polarity/Channel Type | N-Channel | |
| Power Dissipation-Max (Abs) | 40 W | |
| Pulsed Drain Current-Max (IDM) | 8 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | No | |
| Terminal Form | Through-Hole | |
| Terminal Position | Single | |
| Transistor Application | Switching | |
| Transistor Element Material | Silicon |
Alternate Parts for STD2NB25-1
This table gives cross-reference parts and alternative options found for STD2NB25-1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STD2NB25-1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.