| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| STD2NK70Z | STMicroelectronics | Check for Price | Power Field-Effect Transistor, 1.6A I(D), 700V, 7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | STD2NK70ZT4 vs STD2NK70Z |
Part Details for STD2NK70ZT4 by STMicroelectronics
Results Overview of STD2NK70ZT4 by STMicroelectronics
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- Tariff Estimator: (Not Available)
- Number of Functional Equivalents: (1 option)
- CAD Models: (Request Part)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
STD2NK70ZT4 Information
STD2NK70ZT4 by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for STD2NK70ZT4
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
497-4331-2-ND
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DigiKey | MOSFET N-CH 700V 1.6A DPAK Min Qty: 2500 Container: Tape & Reel |
0 Tape & Reel |
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$0.5875 / $0.6231 | Buy Now |
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Vyrian | Power Field-Effect Transistor, 1.6A I(D), 700V, 7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 8291 |
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RFQ |
STD2NK70ZT4 Part Data Attributes
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STD2NK70ZT4
STMicroelectronics
Buy Now
Datasheet
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STD2NK70ZT4
STMicroelectronics
Power Field-Effect Transistor, 1.6A I(D), 700V, 7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Part Package Code | TO-252AA | |
| Package Description | To-252, Dpak-3/2 | |
| Pin Count | 3 | |
| ECCN Code | EAR99 | |
| Additional Feature | Avalanche Rated | |
| Avalanche Energy Rating (Eas) | 110 Mj | |
| Configuration | Single With Built-In Diode | |
| DS Breakdown Voltage-Min | 700 V | |
| Drain Current-Max (ID) | 1.6 A | |
| Drain-source On Resistance-Max | 7 Ω | |
| FET Technology | Metal-Oxide Semiconductor | |
| Feedback Cap-Max (Crss) | 6.5 Pf | |
| JEDEC-95 Code | TO-252AA | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | Enhancement Mode | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | Small Outline | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-Channel | |
| Power Dissipation-Max (Abs) | 45 W | |
| Pulsed Drain Current-Max (IDM) | 6.4 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | Yes | |
| Terminal Finish | Matte Tin (Sn) - Annealed | |
| Terminal Form | Gull Wing | |
| Terminal Position | Single | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | Switching | |
| Transistor Element Material | Silicon |
Alternate Parts for STD2NK70ZT4
This table gives cross-reference parts and alternative options found for STD2NK70ZT4. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STD2NK70ZT4, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
STD2NK70ZT4 Frequently Asked Questions (FAQ)
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The maximum junction temperature for the STD2NK70ZT4 is 150°C, but it's recommended to keep it below 125°C for reliable operation.
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To ensure proper biasing, make sure to provide a stable VCC supply voltage between 10V and 20V, and a VGS voltage between 2V and 10V. Also, ensure the gate-source voltage (VGS) is within the recommended range to avoid damage.
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For optimal thermal performance, use a PCB with a thick copper layer (at least 2 oz) and ensure good thermal conduction to the heat sink. Keep the component placement and routing symmetrical to minimize thermal gradients. A heat sink with a thermal resistance of less than 1°C/W is recommended.
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Yes, the STD2NK70ZT4 is suitable for high-frequency switching applications up to 100 kHz. However, ensure proper PCB layout, decoupling, and snubber circuits to minimize ringing and EMI. Also, consider the device's switching losses and thermal management.
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Use a voltage regulator or a voltage clamp to limit the voltage across the device. Implement overcurrent protection using a current sense resistor and a comparator or a dedicated overcurrent protection IC. Also, consider using a TVS diode or a zener diode for overvoltage protection.