| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| STD70N02L | STMicroelectronics | Check for Price | Power Field-Effect Transistor, 60A I(D), 24V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | STD70N2LH5 vs STD70N02L |
| PHD95N03LT | NXP Semiconductors | Check for Price | Power Field-Effect Transistor, 75A I(D), 25V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | STD70N2LH5 vs PHD95N03LT |
| STD70NH02LT4 | STMicroelectronics | Check for Price | Power Field-Effect Transistor, 60A I(D), 24V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | STD70N2LH5 vs STD70NH02LT4 |
Part Details for STD70N2LH5 by STMicroelectronics
Results Overview of STD70N2LH5 by STMicroelectronics
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- Tariff Estimator: (Not Available)
- Number of Functional Equivalents: (3 options)
- CAD Models: (Request Part)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
STD70N2LH5 Information
STD70N2LH5 by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for STD70N2LH5
| Part # | Distributor | Description | Stock | Price | Buy | |
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Vyrian | Power Field-Effect Transistor, 48A I(D), 25V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 4509 |
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RFQ |
STD70N2LH5 Part Data Attributes
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STD70N2LH5
STMicroelectronics
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Datasheet
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STD70N2LH5
STMicroelectronics
Power Field-Effect Transistor, 48A I(D), 25V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Package Description | Rohs Compliant, Dpak-3 | |
| Pin Count | 3 | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 100 Mj | |
| Case Connection | Drain | |
| Configuration | Single With Built-In Diode | |
| DS Breakdown Voltage-Min | 25 V | |
| Drain Current-Max (ID) | 48 A | |
| Drain-source On Resistance-Max | 0.01 Ω | |
| FET Technology | Metal-Oxide Semiconductor | |
| Feedback Cap-Max (Crss) | 10 Pf | |
| JESD-30 Code | R-PSSO-G2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | Enhancement Mode | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | Small Outline | |
| Polarity/Channel Type | N-Channel | |
| Power Dissipation-Max (Abs) | 60 W | |
| Pulsed Drain Current-Max (IDM) | 192 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | Yes | |
| Terminal Form | Gull Wing | |
| Terminal Position | Single | |
| Transistor Application | Switching | |
| Transistor Element Material | Silicon |
Alternate Parts for STD70N2LH5
This table gives cross-reference parts and alternative options found for STD70N2LH5. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STD70N2LH5, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
STD70N2LH5 Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the STD70N2LH5 is -40°C to 150°C, as specified in the datasheet. However, it's recommended to operate within the -40°C to 125°C range for optimal performance and reliability.
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To ensure proper biasing, follow the recommended operating conditions in the datasheet, including the gate-source voltage (Vgs) and drain-source voltage (Vds) ratings. Additionally, ensure the device is operated within the recommended current limits and thermal constraints.
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For optimal thermal management, use a PCB layout that allows for good heat dissipation, such as using thermal vias and a heat sink. Ensure the device is mounted on a thermally conductive material, and consider using a thermal interface material (TIM) to improve heat transfer. Follow STMicroelectronics' recommended PCB layout guidelines and thermal management recommendations.
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To protect the STD70N2LH5 from ESD, follow proper handling and storage procedures, such as using anti-static bags, wrist straps, and mats. Ensure the device is properly grounded during assembly and testing, and consider using ESD protection devices, such as TVS diodes, in the circuit design.
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The recommended gate drive circuits for the STD70N2LH5 depend on the specific application and requirements. However, a common approach is to use a gate driver IC, such as the STMicroelectronics L638x series, which provides a high-current, low-impedance drive signal to the gate terminal. Ensure the gate drive circuit is designed to meet the device's gate-source voltage and current requirements.