| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| SPW20N60S5FKSA1 | Infineon Technologies AG | $3.2300 | Power Field-Effect Transistor, 20A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | STF23NM60ND vs SPW20N60S5FKSA1 |
| SIHA22N60E-E3 | Vishay Intertechnologies | $53.5098 | Power Field-Effect Transistor, 8A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | STF23NM60ND vs SIHA22N60E-E3 |
| IPA60R165CP | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 21A I(D), 650V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | STF23NM60ND vs IPA60R165CP |
| STB15NM60N | STMicroelectronics | Check for Price | Power Field-Effect Transistor, 14A I(D), 600V, 0.299ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | STF23NM60ND vs STB15NM60N |
| SSF20NS60F | Suzhou Good-Ark Electronics Co Ltd | Check for Price | Power Field-Effect Transistor, 20A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | STF23NM60ND vs SSF20NS60F |
| STB15NM60ND | STMicroelectronics | Check for Price | Power Field-Effect Transistor, 14A I(D), 600V, 0.299ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | STF23NM60ND vs STB15NM60ND |
| SPW15N60CFD | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 13.4A I(D), 600V, 0.33ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD | STF23NM60ND vs SPW15N60CFD |
| TK17A65W5 | Toshiba America Electronic Components | Check for Price | Power Field-Effect Transistor, 17.3A I(D), 650V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | STF23NM60ND vs TK17A65W5 |
| SPA20N65C3 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 20.7A I(D), 650V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | STF23NM60ND vs SPA20N65C3 |
| STF21NM60ND | STMicroelectronics | Check for Price | Power Field-Effect Transistor, 17A I(D), 600V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | STF23NM60ND vs STF21NM60ND |
Part Details for STF23NM60ND by STMicroelectronics
Results Overview of STF23NM60ND by STMicroelectronics
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- Tariff Estimator: (Not Available)
- Number of Functional Equivalents: (10 options)
- CAD Models: (Request Part)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Medical Imaging
Automotive
Robotics and Drones
STF23NM60ND Information
STF23NM60ND by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for STF23NM60ND
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
STF23NM60ND-ND
|
DigiKey | MOSFET N-CH 600V 19.5A TO220FP Min Qty: 1000 Container: Tube |
0 Tube |
|
$3.4370 | Buy Now |
|
DISTI #
STF23NM60ND-STM-0
|
TME | Transistor: N-MOSFET, FDmesh™ II, 600V, 19.5A, 35W, TO220FP Min Qty: 300 | 6000 |
|
$1.6800 | Buy Now |
|
|
Vyrian | Power Field-Effect Transistor, 19.5A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 11877 |
|
RFQ |
STF23NM60ND Part Data Attributes
|
|
STF23NM60ND
STMicroelectronics
Buy Now
Datasheet
|
Compare Parts:
STF23NM60ND
STMicroelectronics
Power Field-Effect Transistor, 19.5A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Part Package Code | TO-220AB | |
| Package Description | Rohs Compliant, To-220fp, 3 Pin | |
| Pin Count | 3 | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 700 Mj | |
| Case Connection | Isolated | |
| Configuration | Single With Built-In Diode | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 19.5 A | |
| Drain-source On Resistance-Max | 0.18 Ω | |
| FET Technology | Metal-Oxide Semiconductor | |
| Feedback Cap-Max (Crss) | 10 Pf | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | Enhancement Mode | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | Flange Mount | |
| Polarity/Channel Type | N-Channel | |
| Power Dissipation-Max (Abs) | 35 W | |
| Pulsed Drain Current-Max (IDM) | 78 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | No | |
| Terminal Finish | Matte Tin (Sn) - Annealed | |
| Terminal Form | Through-Hole | |
| Terminal Position | Single | |
| Transistor Application | Switching | |
| Transistor Element Material | Silicon |
Alternate Parts for STF23NM60ND
This table gives cross-reference parts and alternative options found for STF23NM60ND. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STF23NM60ND, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
STF23NM60ND Frequently Asked Questions (FAQ)
-
The maximum operating frequency of the STF23NM60ND is 100 kHz, but it can be operated at higher frequencies with reduced performance.
-
To ensure proper thermal management, the STF23NM60ND should be mounted on a heat sink with a thermal resistance of less than 1°C/W, and the ambient temperature should be kept below 150°C.
-
The recommended gate drive voltage for the STF23NM60ND is between 10V and 15V, with a maximum gate-source voltage of ±20V.
-
Yes, the STF23NM60ND is qualified for high-reliability applications, including automotive and industrial systems, and meets the requirements of the AEC-Q101 standard.
-
To protect the STF23NM60ND from ESD, handle the device with an anti-static wrist strap or mat, and ensure that the device is stored in an anti-static bag or tube.