Part Details for V436516Y04VATG-75 by Mosel Vitelic Corporation
Overview of V436516Y04VATG-75 by Mosel Vitelic Corporation
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Space Technology
Aerospace and Defense
Transportation and Logistics
Renewable Energy
Automotive
Robotics and Drones
Part Details for V436516Y04VATG-75
V436516Y04VATG-75 CAD Models
V436516Y04VATG-75 Part Data Attributes
|
|
V436516Y04VATG-75
Mosel Vitelic Corporation
Buy Now
Datasheet
|
Compare Parts:
V436516Y04VATG-75
Mosel Vitelic Corporation
Synchronous DRAM Module, 16MX64, 5.4ns, CMOS, SODIMM-144
|
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | MOSEL-VITELIC | |
| Part Package Code | MODULE | |
| Package Description | DIMM, DIMM144,32 | |
| Pin Count | 144 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.32 | |
| Access Mode | DUAL BANK PAGE BURST | |
| Access Time-Max | 5.4 ns | |
| Additional Feature | AUTO/SELF REFRESH | |
| Clock Frequency-Max (fCLK) | 133 MHz | |
| I/O Type | COMMON | |
| JESD-30 Code | R-XDMA-N144 | |
| Memory Density | 1073741824 bit | |
| Memory IC Type | SYNCHRONOUS DRAM MODULE | |
| Memory Width | 64 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 144 | |
| Number of Words | 16777216 words | |
| Number of Words Code | 16000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 70 °C | |
| Operating Temperature-Min | ||
| Organization | 16MX64 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | UNSPECIFIED | |
| Package Code | DIMM | |
| Package Equivalence Code | DIMM144,32 | |
| Package Shape | RECTANGULAR | |
| Package Style | MICROELECTRONIC ASSEMBLY | |
| Qualification Status | Not Qualified | |
| Refresh Cycles | 4096 | |
| Self Refresh | YES | |
| Standby Current-Max | 0.012 A | |
| Supply Current-Max | 1 mA | |
| Supply Voltage-Max (Vsup) | 3.6 V | |
| Supply Voltage-Min (Vsup) | 3 V | |
| Supply Voltage-Nom (Vsup) | 3.3 V | |
| Surface Mount | NO | |
| Technology | CMOS | |
| Temperature Grade | COMMERCIAL | |
| Terminal Form | NO LEAD | |
| Terminal Pitch | 0.8 mm | |
| Terminal Position | DUAL |
Alternate Parts for V436516Y04VATG-75
This table gives cross-reference parts and alternative options found for V436516Y04VATG-75. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of V436516Y04VATG-75, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| MH16S64FFB-10L | Synchronous DRAM Module, 16MX64, 8ns, CMOS, DIMM-144 | Mitsubishi Electric | V436516Y04VATG-75 vs MH16S64FFB-10L |
| M466S1723CT3-L1L | Synchronous DRAM Module, 16MX64, 6ns, CMOS, DIMM-144 | Samsung Semiconductor | V436516Y04VATG-75 vs M466S1723CT3-L1L |
| HYS64V16221GDL-8-C2 | Synchronous DRAM Module, 16MX64, 6ns, CMOS, SODIMM-144 | Infineon Technologies AG | V436516Y04VATG-75 vs HYS64V16221GDL-8-C2 |
| HYM72V16M636T6-H | Synchronous DRAM Module, 16MX64, 5.4ns, CMOS, SODIMM-144 | SK Hynix Inc | V436516Y04VATG-75 vs HYM72V16M636T6-H |
| HYS64V16220GDL-8-C2 | Synchronous DRAM Module, 16MX64, 6ns, CMOS, SODIMM-144 | Infineon Technologies AG | V436516Y04VATG-75 vs HYS64V16220GDL-8-C2 |
| HYM71V16M635ALT6-K | Synchronous DRAM Module, 16MX64, 5.4ns, CMOS, SODIMM-144 | SK Hynix Inc | V436516Y04VATG-75 vs HYM71V16M635ALT6-K |
| V436516Y04VATG-75PC | Synchronous DRAM Module, 16MX64, 5.4ns, CMOS, SODIMM-144 | Mosel Vitelic Corporation | V436516Y04VATG-75 vs V436516Y04VATG-75PC |
| HB52RD168DB-A6FL | Synchronous DRAM Module, 16MX4, 6ns, CMOS, SODIMM-144 | Hitachi Ltd | V436516Y04VATG-75 vs HB52RD168DB-A6FL |
| MT8LSDT1664LHIY-133XX | Synchronous DRAM Module, 16MX64, 5.4ns, CMOS, LEAD FREE, SODIMM-144 | Micron Technology Inc | V436516Y04VATG-75 vs MT8LSDT1664LHIY-133XX |
| MT8LSDT1664LHG-10EXX | Synchronous DRAM Module, 16MX64, 6ns, CMOS, SODIMM-144 | Micron Technology Inc | V436516Y04VATG-75 vs MT8LSDT1664LHG-10EXX |