Datasheets
V58C2128164SBI6 by: ProMOS Technologies Inc

DDR DRAM, 8MX16, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, GREEN, PLASTIC, MS-024FC, TSOP2-66

Part Details for V58C2128164SBI6 by ProMOS Technologies Inc

Overview of V58C2128164SBI6 by ProMOS Technologies Inc

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Applications Industrial Automation Renewable Energy Robotics and Drones

Part Details for V58C2128164SBI6

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V58C2128164SBI6 Part Data Attributes:

V58C2128164SBI6 ProMOS Technologies Inc
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V58C2128164SBI6 ProMOS Technologies Inc DDR DRAM, 8MX16, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, GREEN, PLASTIC, MS-024FC, TSOP2-66
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer PROMOS TECHNOLOGIES INC
Part Package Code TSSOP2
Package Description TSSOP, TSSOP66,.46
Pin Count 66
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8542.32.00.02
Access Mode FOUR BANK PAGE BURST
Access Time-Max 0.7 ns
Additional Feature AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 166 MHz
I/O Type COMMON
Interleaved Burst Length 2,4,8
JESD-30 Code R-PDSO-G66
Length 22.22 mm
Memory Density 134217728 bit
Memory IC Type DDR1 DRAM
Memory Width 16
Number of Functions 1
Number of Ports 1
Number of Terminals 66
Number of Words 8388608 words
Number of Words Code 8000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 70 °C
Operating Temperature-Min
Organization 8MX16
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code TSSOP
Package Equivalence Code TSSOP66,.46
Package Shape RECTANGULAR
Package Style SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
Peak Reflow Temperature (Cel) NOT SPECIFIED
Qualification Status Not Qualified
Refresh Cycles 4096
Seated Height-Max 1.2 mm
Self Refresh YES
Sequential Burst Length 2,4,8
Standby Current-Max 0.015 A
Supply Current-Max 0.325 mA
Supply Voltage-Max (Vsup) 2.7 V
Supply Voltage-Min (Vsup) 2.3 V
Supply Voltage-Nom (Vsup) 2.5 V
Surface Mount YES
Technology CMOS
Temperature Grade COMMERCIAL
Terminal Form GULL WING
Terminal Pitch 0.65 mm
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Width 10.16 mm

Alternate Parts for V58C2128164SBI6

This table gives cross-reference parts and alternative options found for V58C2128164SBI6. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of V58C2128164SBI6, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
V58C2128164SBLT6 DDR DRAM, 8MX16, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, PLASTIC, MS-024FC, TSOP2-66 ProMOS Technologies Inc V58C2128164SBI6 vs V58C2128164SBLT6
V58C2128164SBLI6 DDR DRAM, 8MX16, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, GREEN, PLASTIC, MS-024FC, TSOP2-66 ProMOS Technologies Inc V58C2128164SBI6 vs V58C2128164SBLI6
V58C2128164SBT6 DDR DRAM, 8MX16, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, PLASTIC, MS-024FC, TSOP2-66 ProMOS Technologies Inc V58C2128164SBI6 vs V58C2128164SBT6
V58C2128164SBLE6 DDR DRAM, 8MX16, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, ROHS COMPLIANT, PLASTIC, MS-024FC, TSOP2-66 ProMOS Technologies Inc V58C2128164SBI6 vs V58C2128164SBLE6
HY5DU281622ET-J DDR DRAM, 8MX16, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 SK Hynix Inc V58C2128164SBI6 vs HY5DU281622ET-J
Part Number Description Manufacturer Compare
K4D261638F-TC330 Synchronous Graphics RAM, 8MX16, 0.6ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 Samsung Semiconductor V58C2128164SBI6 vs K4D261638F-TC330
MT46V8M16TG-6G DDR DRAM, 8MX16, 0.75ns, CMOS, PDSO66, 0.400 INCH, 0.65 MM PITCH, PLASTIC, TSOP-66 Micron Technology Inc V58C2128164SBI6 vs MT46V8M16TG-6G
HY5DV281622DT-4 DDR DRAM, 8MX16, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 SK Hynix Inc V58C2128164SBI6 vs HY5DV281622DT-4
MT46V8M16TG-75ZLIT:A DDR DRAM, 8MX16, 0.75ns, CMOS, PDSO66, 0.400 INCH, PLASTIC, TSOP-66 Micron Technology Inc V58C2128164SBI6 vs MT46V8M16TG-75ZLIT:A
NT5DS8M16HS-5TI DDR DRAM, 8MX16, 0.7ns, CMOS, PDSO66, 0.400 INCH, HALOGEN FREE AND ROHS COMPLIANT, TSOP2-66 Nanya Technology Corporation V58C2128164SBI6 vs NT5DS8M16HS-5TI
MT46V8M16P-5BL DDR DRAM, 8MX16, 0.7ns, CMOS, PDSO66, 0.400 INCH, LEAD FREE, PLASTIC, TSOP-66 Micron Technology Inc V58C2128164SBI6 vs MT46V8M16P-5BL
MT46V8M16TG-6GES:B DDR DRAM, 8MX16, 0.75ns, CMOS, PDSO66, 0.400 INCH, 0.65 MM PITCH, PLASTIC, TSOP-66 Micron Technology Inc V58C2128164SBI6 vs MT46V8M16TG-6GES:B
HY5DU1291622TC-8 DDR DRAM, 8MX16, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 SK Hynix Inc V58C2128164SBI6 vs HY5DU1291622TC-8
HY5DU281622DLT-D43 DDR DRAM, 8MX16, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 SK Hynix Inc V58C2128164SBI6 vs HY5DU281622DLT-D43
HY5DU1291622TC-75 DDR DRAM, 8MX16, 1.5ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 SK Hynix Inc V58C2128164SBI6 vs HY5DU1291622TC-75

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