Datasheets
VQ1004P by:

Power Field-Effect Transistor, 0.46A I(D), 60V, 3.5ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Details for VQ1004P by Supertex Inc

Overview of VQ1004P by Supertex Inc

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Part Details for VQ1004P

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VQ1004P Part Data Attributes

VQ1004P Supertex Inc
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VQ1004P Supertex Inc Power Field-Effect Transistor, 0.46A I(D), 60V, 3.5ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer SUPERTEX INC
Reach Compliance Code unknown
ECCN Code EAR99
Configuration SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 0.46 A
Drain-source On Resistance-Max 3.5 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 10 pF
JESD-30 Code R-CDIP-T14
JESD-609 Code e0
Number of Elements 4
Number of Terminals 14
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape RECTANGULAR
Package Style IN-LINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 1.3 W
Pulsed Drain Current-Max (IDM) 2 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form THROUGH-HOLE
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 10 ns
Turn-on Time-Max (ton) 10 ns

Alternate Parts for VQ1004P

This table gives cross-reference parts and alternative options found for VQ1004P. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of VQ1004P, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
VQ1004P Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, Vishay Siliconix VQ1004P vs VQ1004P
VQ1004P Power Field-Effect Transistor, 0.46A I(D), 60V, 3.5ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DIP-14 Vishay Intertechnologies VQ1004P vs VQ1004P
VQ1004J Power Field-Effect Transistor, 0.46A I(D), 60V, 3.5ohm, N-Channel, Silicon, Metal-oxide Semiconductor FET, Temic Semiconductors VQ1004P vs VQ1004J
VQ1004P Power Field-Effect Transistor, 0.46A I(D), 60V, 3.5ohm, N-Channel, Silicon, Metal-oxide Semiconductor FET, SIDE BRAZED PACKAGE-14 Temic Semiconductors VQ1004P vs VQ1004P
VQ1004J Power Field-Effect Transistor, 0.46A I(D), 60V, 3.5ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, DIP-14 Supertex Inc VQ1004P vs VQ1004J
Part Number Description Manufacturer Compare
VQ1004J Power Field-Effect Transistor, 0.46A I(D), 60V, 3.5ohm, N-Channel, Silicon, Metal-oxide Semiconductor FET, Temic Semiconductors VQ1004P vs VQ1004J
ZVN4206E Power Field-Effect Transistor, 0.6A I(D), 60V, 1.5ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, DIP-14 Zetex / Diodes Inc VQ1004P vs ZVN4206E
VQ1001P Power Field-Effect Transistor, 0.53A I(D), 30V, 1ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, Temic Semiconductors VQ1004P vs VQ1001P
VQ1004P Power Field-Effect Transistor, 0.46A I(D), 60V, 3.5ohm, N-Channel, Silicon, Metal-oxide Semiconductor FET, SIDE BRAZED PACKAGE-14 Temic Semiconductors VQ1004P vs VQ1004P
VQ1000J Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, Vishay Siliconix VQ1004P vs VQ1000J
VQ1004J Power Field-Effect Transistor, 0.46A I(D), 60V, 3.5ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, DIP-14 Supertex Inc VQ1004P vs VQ1004J
VQ1000N7 Power Field-Effect Transistor, 0.225A I(D), 60V, 5.5ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, CERAMIC, DIP-14 Supertex Inc VQ1004P vs VQ1000N7
ZVN3306E Power Field-Effect Transistor, 0.27A I(D), 60V, 5ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, DIP-14 Zetex / Diodes Inc VQ1004P vs ZVN3306E
VQ1001J Power Field-Effect Transistor, 0.83A I(D), 30V, 1ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, Temic Semiconductors VQ1004P vs VQ1001J
VQ1000P Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, Vishay Siliconix VQ1004P vs VQ1000P

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