Part Details for VQ1004P by Vishay Intertechnologies
Overview of VQ1004P by Vishay Intertechnologies
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for VQ1004P
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
13C1946
|
Newark | Mosfet, Channel Type:N Channel, Drain Source Voltage Vds:60V, Continuous Drain Current Id:460Ma, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:1.7V, Power Dissipation:1.3W, Msl:- Rohs Compliant: No |Vishay VQ1004P Min Qty: 25 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
|
Buy Now | |
|
Perfect Parts Corporation | 28 |
|
RFQ |
Part Details for VQ1004P
VQ1004P CAD Models
VQ1004P Part Data Attributes
|
VQ1004P
Vishay Intertechnologies
Buy Now
Datasheet
|
Compare Parts:
VQ1004P
Vishay Intertechnologies
Power Field-Effect Transistor, 0.46A I(D), 60V, 3.5ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DIP-14
|
Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
Package Description | DIP-14 | |
Reach Compliance Code | compliant | |
Configuration | SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 0.46 A | |
Drain-source On Resistance-Max | 3.5 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 10 pF | |
JESD-30 Code | R-CDIP-T14 | |
JESD-609 Code | e0 | |
Number of Elements | 4 | |
Number of Terminals | 14 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
Package Shape | RECTANGULAR | |
Package Style | IN-LINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 1.3 W | |
Pulsed Drain Current-Max (IDM) | 2 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | TIN LEAD | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | DUAL | |
Transistor Element Material | SILICON | |
Turn-off Time-Max (toff) | 10 ns | |
Turn-on Time-Max (ton) | 10 ns |
Alternate Parts for VQ1004P
This table gives cross-reference parts and alternative options found for VQ1004P. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of VQ1004P, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
VQ1004P | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | Vishay Siliconix | VQ1004P vs VQ1004P |
VQ1004J | Power Field-Effect Transistor, 0.46A I(D), 60V, 3.5ohm, N-Channel, Silicon, Metal-oxide Semiconductor FET, | Temic Semiconductors | VQ1004P vs VQ1004J |
VQ1004P | Power Field-Effect Transistor, 0.46A I(D), 60V, 3.5ohm, N-Channel, Silicon, Metal-oxide Semiconductor FET, SIDE BRAZED PACKAGE-14 | Temic Semiconductors | VQ1004P vs VQ1004P |
VQ1004J | Power Field-Effect Transistor, 0.46A I(D), 60V, 3.5ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, DIP-14 | Supertex Inc | VQ1004P vs VQ1004J |