Datasheets
W9425G6EB-5 by: Winbond Electronics Corp

DDR DRAM, 16MX16, 0.7ns, CMOS, PBGA60, 8 X 13 MM, ROHS COMPLIANT, TFBGA-60

Part Details for W9425G6EB-5 by Winbond Electronics Corp

Overview of W9425G6EB-5 by Winbond Electronics Corp

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Part Details for W9425G6EB-5

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W9425G6EB-5 Part Data Attributes:

W9425G6EB-5 Winbond Electronics Corp
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W9425G6EB-5 Winbond Electronics Corp DDR DRAM, 16MX16, 0.7ns, CMOS, PBGA60, 8 X 13 MM, ROHS COMPLIANT, TFBGA-60
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer WINBOND ELECTRONICS CORP
Part Package Code BGA
Package Description TBGA, BGA60,9X12,40/32
Pin Count 60
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8542.32.00.24
Access Mode FOUR BANK PAGE BURST
Access Time-Max 0.7 ns
Additional Feature AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 200 MHz
I/O Type COMMON
Interleaved Burst Length 2,4,8
JESD-30 Code R-PBGA-B60
Length 13 mm
Memory Density 268435456 bit
Memory IC Type DDR1 DRAM
Memory Width 16
Number of Functions 1
Number of Ports 1
Number of Terminals 60
Number of Words 16777216 words
Number of Words Code 16000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 70 °C
Operating Temperature-Min
Organization 16MX16
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code TBGA
Package Equivalence Code BGA60,9X12,40/32
Package Shape RECTANGULAR
Package Style GRID ARRAY, THIN PROFILE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Qualification Status Not Qualified
Refresh Cycles 8192
Seated Height-Max 1.2 mm
Self Refresh YES
Sequential Burst Length 2,4,8
Standby Current-Max 0.02 A
Supply Current-Max 0.3 mA
Supply Voltage-Max (Vsup) 2.7 V
Supply Voltage-Min (Vsup) 2.3 V
Supply Voltage-Nom (Vsup) 2.5 V
Surface Mount YES
Technology CMOS
Temperature Grade COMMERCIAL
Terminal Form BALL
Terminal Pitch 1 mm
Terminal Position BOTTOM
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Width 8 mm

Alternate Parts for W9425G6EB-5

This table gives cross-reference parts and alternative options found for W9425G6EB-5. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of W9425G6EB-5, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
V58C2256164SALP-6 DDR DRAM, 16MX16, 0.7ns, CMOS, PBGA60, GREEN, M0-233, DIE-STACKED, FBGA-60 ProMOS Technologies Inc W9425G6EB-5 vs V58C2256164SALP-6
V58C2256164SAS-6 DDR DRAM, 16MX16, 0.7ns, CMOS, PBGA60, M0-233, FBGA-60 ProMOS Technologies Inc W9425G6EB-5 vs V58C2256164SAS-6
V58C2256164SALJ-6 DDR DRAM, 16MX16, 0.7ns, CMOS, PBGA60, GREEN, MO-233, FBGA-60 ProMOS Technologies Inc W9425G6EB-5 vs V58C2256164SALJ-6
V58C2256164SAZ-6 DDR DRAM, 16MX16, 0.7ns, CMOS, PBGA60, M0-233, DIE-STACKED, FBGA-60 ProMOS Technologies Inc W9425G6EB-5 vs V58C2256164SAZ-6
V58C2256164SCLF6I DDR DRAM, 16MX16, 0.7ns, CMOS, PBGA60, ROHS COMPLIANT, MO-233, FBGA-60 ProMOS Technologies Inc W9425G6EB-5 vs V58C2256164SCLF6I
V58C2256164SAJ-6 DDR DRAM, 16MX16, 0.7ns, CMOS, PBGA60, GREEN, MO-233, FBGA-60 ProMOS Technologies Inc W9425G6EB-5 vs V58C2256164SAJ-6
V58C2256164SAR-6 DDR DRAM, 16MX16, 0.7ns, CMOS, PBGA60, ROHS COMPLIANT, M0-233, DIE-STACKED, FBGA-60 ProMOS Technologies Inc W9425G6EB-5 vs V58C2256164SAR-6
V58C2256164SCJ6I DDR DRAM, 16MX16, 0.7ns, CMOS, PBGA60, GREEN, MO-233, FBGA-60 ProMOS Technologies Inc W9425G6EB-5 vs V58C2256164SCJ6I
V58C2256164SALF-6 DDR DRAM, 16MX16, 0.7ns, CMOS, PBGA60, ROHS COMPLIANT, MO-233, FBGA-60 ProMOS Technologies Inc W9425G6EB-5 vs V58C2256164SALF-6
V58C2256164SCLJ6I DDR DRAM, 16MX16, 0.7ns, CMOS, PBGA60, GREEN, MO-233, FBGA-60 ProMOS Technologies Inc W9425G6EB-5 vs V58C2256164SCLJ6I
Part Number Description Manufacturer Compare
MT46V16M16FG-75ZAT:F DDR DRAM, 16MX16, 0.75ns, CMOS, PBGA60, (8 X 14) MM, PLASTIC, FBGA-60 Micron Technology Inc W9425G6EB-5 vs MT46V16M16FG-75ZAT:F
MT46V16M16FG-75IT:F DDR DRAM, 16MX16, 0.75ns, CMOS, PBGA60, (8 X 14) MM, PLASTIC, FBGA-60 Micron Technology Inc W9425G6EB-5 vs MT46V16M16FG-75IT:F
HY5DU561622FFP-D43 DDR DRAM, 16MX16, 0.7ns, CMOS, PBGA60, ROHS COMPLIANT, FBGA-60 SK Hynix Inc W9425G6EB-5 vs HY5DU561622FFP-D43
HY5MS5B6LFP-S DDR DRAM, 16MX16, 7ns, CMOS, PBGA60, 8 X 12 MM, 1 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, FBGA-80 SK Hynix Inc W9425G6EB-5 vs HY5MS5B6LFP-S
MT48LC8M16A2FC-75 Synchronous DRAM, 8MX16, 5.4ns, CMOS, PBGA60, 11 X 13 MM, PLASTIC, FBGA-60 Micron Technology Inc W9425G6EB-5 vs MT48LC8M16A2FC-75
V54C3128164VBF7PC Synchronous DRAM, 8MX16, 5.4ns, CMOS, PBGA60, LEAD FREE, MO-210, FBGA-60 ProMOS Technologies Inc W9425G6EB-5 vs V54C3128164VBF7PC
MT46H16M16LFBF-6IT DDR DRAM, 16MX16, 5.5ns, CMOS, PBGA60, 8 X 9 MM, LEAD FREE, PLASTIC, VFBGA-60 Micron Technology Inc W9425G6EB-5 vs MT46H16M16LFBF-6IT
MT46V8M16BJ-75LIT:A DDR DRAM, 8MX16, 0.75ns, CMOS, PBGA60, 16 X 9 MM, LEAD FREE, FBGA-60 Micron Technology Inc W9425G6EB-5 vs MT46V8M16BJ-75LIT:A
MT46V16M16BG-5BL:C DDR DRAM, 16MX16, 0.7ns, CMOS, PBGA60, 8 X 14 MM, LEAD FREE, PLASTIC, FBGA-60 Micron Technology Inc W9425G6EB-5 vs MT46V16M16BG-5BL:C
V54C3256164VBF7 Synchronous DRAM, 16MX16, 5.4ns, CMOS, PBGA60, LEAD FREE, MO-210, FBGA-60 ProMOS Technologies Inc W9425G6EB-5 vs V54C3256164VBF7

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