Part Details for W948D2FBJX5I by Winbond Electronics Corp
Overview of W948D2FBJX5I by Winbond Electronics Corp
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- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
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Price & Stock for W948D2FBJX5I
Part # | Distributor | Description | Stock | Price | Buy | |
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NAC | 256Mb LPDDR, x32, 200MHz, Industrial Temp, VFBGA90 Package RoHS: Compliant Min Qty: 240 Package Multiple: 240 | 0 |
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$2.7600 / $2.9100 | Buy Now |
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Chip1Cloud | LPDDR-400 8Mx32 (256Mb) Ind | 7700 |
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RFQ |
Part Details for W948D2FBJX5I
W948D2FBJX5I CAD Models
W948D2FBJX5I Part Data Attributes
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W948D2FBJX5I
Winbond Electronics Corp
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Datasheet
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W948D2FBJX5I
Winbond Electronics Corp
DDR DRAM, 4MX32, 5ns, CMOS, PBGA90, 8 X 13 MM, 0.80 MM PITCH, HALOGEN FREE AND LEAD FREE, VFBGA-90
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Rohs Code | Yes | |
Part Life Cycle Code | Not Recommended | |
Ihs Manufacturer | WINBOND ELECTRONICS CORP | |
Part Package Code | BGA | |
Package Description | TFBGA, BGA90,9X15,32 | |
Pin Count | 90 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8542.32.00.02 | |
Access Mode | FOUR BANK PAGE BURST | |
Access Time-Max | 5 ns | |
Additional Feature | AUTO/SELF REFRESH | |
Clock Frequency-Max (fCLK) | 200 MHz | |
I/O Type | COMMON | |
Interleaved Burst Length | 2,4,8,16 | |
JESD-30 Code | R-PBGA-B90 | |
Length | 13 mm | |
Memory Density | 134217728 bit | |
Memory IC Type | LPDDR1 DRAM | |
Memory Width | 32 | |
Number of Functions | 1 | |
Number of Ports | 1 | |
Number of Terminals | 90 | |
Number of Words | 4194304 words | |
Number of Words Code | 4000000 | |
Operating Mode | SYNCHRONOUS | |
Operating Temperature-Max | 85 °C | |
Operating Temperature-Min | -40 °C | |
Organization | 4MX32 | |
Output Characteristics | 3-STATE | |
Package Body Material | PLASTIC/EPOXY | |
Package Code | TFBGA | |
Package Equivalence Code | BGA90,9X15,32 | |
Package Shape | RECTANGULAR | |
Package Style | GRID ARRAY, THIN PROFILE, FINE PITCH | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Qualification Status | Not Qualified | |
Refresh Cycles | 4096 | |
Seated Height-Max | 1.025 mm | |
Self Refresh | YES | |
Sequential Burst Length | 2,4,8,16 | |
Standby Current-Max | 0.00001 A | |
Supply Current-Max | 0.075 mA | |
Supply Voltage-Max (Vsup) | 1.95 V | |
Supply Voltage-Min (Vsup) | 1.7 V | |
Supply Voltage-Nom (Vsup) | 1.8 V | |
Surface Mount | YES | |
Technology | CMOS | |
Temperature Grade | INDUSTRIAL | |
Terminal Form | BALL | |
Terminal Pitch | 0.8 mm | |
Terminal Position | BOTTOM | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Width | 8 mm |
Alternate Parts for W948D2FBJX5I
This table gives cross-reference parts and alternative options found for W948D2FBJX5I. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of W948D2FBJX5I, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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MT48V8M32LFF5-75IT | Synchronous DRAM, 8MX32, 6ns, CMOS, PBGA90, 8 X 13 MM, VFBGA-90 | Micron Technology Inc | W948D2FBJX5I vs MT48V8M32LFF5-75IT |
HY5W2A2F-S | Synchronous DRAM, 4MX32, 7ns, CMOS, PBGA90, 0.80 MM PITCH, FBGA-90 | SK Hynix Inc | W948D2FBJX5I vs HY5W2A2F-S |
MT46H8M32LFCM-54IT:H | DDR DRAM, 8MX32, 5ns, CMOS, PBGA90 | Micron Technology Inc | W948D2FBJX5I vs MT46H8M32LFCM-54IT:H |
HY5V52FP-P | Synchronous DRAM, 8MX32, 6ns, CMOS, PBGA90, 11 X 13 MM, 0.80 MM PITCH, LEAD FREE, FBGA-90 | SK Hynix Inc | W948D2FBJX5I vs HY5V52FP-P |
K4M28323PH-FE1L0 | Synchronous DRAM, 4MX32, 7ns, CMOS, PBGA90, FBGA-90 | Samsung Semiconductor | W948D2FBJX5I vs K4M28323PH-FE1L0 |
HY5V52F-H | Synchronous DRAM, 8MX32, 5.4ns, CMOS, PBGA90, 11 X 13 MM, 0.80 MM PITCH, FBGA-90 | SK Hynix Inc | W948D2FBJX5I vs HY5V52F-H |
MT48V4M32LFFC-10IT | Synchronous DRAM, 4MX32, 7ns, CMOS, PBGA90, 11 X 13 MM, FBGA-90 | Micron Technology Inc | W948D2FBJX5I vs MT48V4M32LFFC-10IT |
HY5W2A2SF-H | Synchronous DRAM, 4MX32, 5.4ns, CMOS, PBGA90, 0.80 MM PITCH, FBGA-90 | SK Hynix Inc | W948D2FBJX5I vs HY5W2A2SF-H |
W948D2FBJX5E | DDR DRAM, 4MX32, 5ns, CMOS, PBGA90, 8 X 13 MM, 0.80 MM PITCH, HALOGEN FREE AND LEAD FREE, VFBGA-90 | Winbond Electronics Corp | W948D2FBJX5I vs W948D2FBJX5E |
K4M56323LE-EE80 | Synchronous DRAM, 8MX32, 6ns, CMOS, PBGA90, LEAD FREE, FBGA-90 | Samsung Semiconductor | W948D2FBJX5I vs K4M56323LE-EE80 |