Datasheets
W948D2FBJX5I by: Winbond Electronics Corp

DDR DRAM, 4MX32, 5ns, CMOS, PBGA90, 8 X 13 MM, 0.80 MM PITCH, HALOGEN FREE AND LEAD FREE, VFBGA-90

Part Details for W948D2FBJX5I by Winbond Electronics Corp

Overview of W948D2FBJX5I by Winbond Electronics Corp

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Price & Stock for W948D2FBJX5I

Part # Distributor Description Stock Price Buy
NAC 256Mb LPDDR, x32, 200MHz, Industrial Temp, VFBGA90 Package RoHS: Compliant Min Qty: 240 Package Multiple: 240 0
  • 240 $2.9100
  • 1,200 $2.7600
$2.7600 / $2.9100 Buy Now
Chip1Cloud LPDDR-400 8Mx32 (256Mb) Ind 7700
RFQ

Part Details for W948D2FBJX5I

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W948D2FBJX5I Part Data Attributes

W948D2FBJX5I Winbond Electronics Corp
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W948D2FBJX5I Winbond Electronics Corp DDR DRAM, 4MX32, 5ns, CMOS, PBGA90, 8 X 13 MM, 0.80 MM PITCH, HALOGEN FREE AND LEAD FREE, VFBGA-90
Rohs Code Yes
Part Life Cycle Code Not Recommended
Ihs Manufacturer WINBOND ELECTRONICS CORP
Part Package Code BGA
Package Description TFBGA, BGA90,9X15,32
Pin Count 90
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8542.32.00.02
Access Mode FOUR BANK PAGE BURST
Access Time-Max 5 ns
Additional Feature AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 200 MHz
I/O Type COMMON
Interleaved Burst Length 2,4,8,16
JESD-30 Code R-PBGA-B90
Length 13 mm
Memory Density 134217728 bit
Memory IC Type LPDDR1 DRAM
Memory Width 32
Number of Functions 1
Number of Ports 1
Number of Terminals 90
Number of Words 4194304 words
Number of Words Code 4000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 85 °C
Operating Temperature-Min -40 °C
Organization 4MX32
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code TFBGA
Package Equivalence Code BGA90,9X15,32
Package Shape RECTANGULAR
Package Style GRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Cel) NOT SPECIFIED
Qualification Status Not Qualified
Refresh Cycles 4096
Seated Height-Max 1.025 mm
Self Refresh YES
Sequential Burst Length 2,4,8,16
Standby Current-Max 0.00001 A
Supply Current-Max 0.075 mA
Supply Voltage-Max (Vsup) 1.95 V
Supply Voltage-Min (Vsup) 1.7 V
Supply Voltage-Nom (Vsup) 1.8 V
Surface Mount YES
Technology CMOS
Temperature Grade INDUSTRIAL
Terminal Form BALL
Terminal Pitch 0.8 mm
Terminal Position BOTTOM
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Width 8 mm

Alternate Parts for W948D2FBJX5I

This table gives cross-reference parts and alternative options found for W948D2FBJX5I. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of W948D2FBJX5I, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
MT48V8M32LFF5-75IT Synchronous DRAM, 8MX32, 6ns, CMOS, PBGA90, 8 X 13 MM, VFBGA-90 Micron Technology Inc W948D2FBJX5I vs MT48V8M32LFF5-75IT
HY5W2A2F-S Synchronous DRAM, 4MX32, 7ns, CMOS, PBGA90, 0.80 MM PITCH, FBGA-90 SK Hynix Inc W948D2FBJX5I vs HY5W2A2F-S
MT46H8M32LFCM-54IT:H DDR DRAM, 8MX32, 5ns, CMOS, PBGA90 Micron Technology Inc W948D2FBJX5I vs MT46H8M32LFCM-54IT:H
HY5V52FP-P Synchronous DRAM, 8MX32, 6ns, CMOS, PBGA90, 11 X 13 MM, 0.80 MM PITCH, LEAD FREE, FBGA-90 SK Hynix Inc W948D2FBJX5I vs HY5V52FP-P
K4M28323PH-FE1L0 Synchronous DRAM, 4MX32, 7ns, CMOS, PBGA90, FBGA-90 Samsung Semiconductor W948D2FBJX5I vs K4M28323PH-FE1L0
HY5V52F-H Synchronous DRAM, 8MX32, 5.4ns, CMOS, PBGA90, 11 X 13 MM, 0.80 MM PITCH, FBGA-90 SK Hynix Inc W948D2FBJX5I vs HY5V52F-H
MT48V4M32LFFC-10IT Synchronous DRAM, 4MX32, 7ns, CMOS, PBGA90, 11 X 13 MM, FBGA-90 Micron Technology Inc W948D2FBJX5I vs MT48V4M32LFFC-10IT
HY5W2A2SF-H Synchronous DRAM, 4MX32, 5.4ns, CMOS, PBGA90, 0.80 MM PITCH, FBGA-90 SK Hynix Inc W948D2FBJX5I vs HY5W2A2SF-H
W948D2FBJX5E DDR DRAM, 4MX32, 5ns, CMOS, PBGA90, 8 X 13 MM, 0.80 MM PITCH, HALOGEN FREE AND LEAD FREE, VFBGA-90 Winbond Electronics Corp W948D2FBJX5I vs W948D2FBJX5E
K4M56323LE-EE80 Synchronous DRAM, 8MX32, 6ns, CMOS, PBGA90, LEAD FREE, FBGA-90 Samsung Semiconductor W948D2FBJX5I vs K4M56323LE-EE80

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