Datasheets
W9864G2JH-6I by:

Synchronous DRAM, 4MX32, 5ns, CMOS, PDSO86, TSOPII-86

Part Details for W9864G2JH-6I by Winbond Electronics Corp

Overview of W9864G2JH-6I by Winbond Electronics Corp

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Price & Stock for W9864G2JH-6I

Part # Distributor Description Stock Price Buy
DISTI # 256-W9864G2JH-6I-ND
DigiKey IC DRAM 64MBIT LVTTL 86TSOP II Min Qty: 108 Lead time: 22 Weeks Container: Tray Limited Supply - Call
  • 108 $2.9831
$2.9831 Buy Now
DISTI # 454-W9864G2JH-6I
Mouser Electronics DRAM 64Mb, SDR SDRAM, x32, 166MHz, 65nm, Ind temp RoHS: Compliant 0
  • 1 $3.6600
  • 10 $3.3200
  • 100 $2.9200
  • 216 $2.9100
  • 432 $2.8600
  • 1,080 $2.7900
  • 2,592 $2.7300
$2.7300 / $3.6600 Order Now
Bristol Electronics   574
RFQ
NAC 64Mb, SDR SDRAM, x32, 166MHz, 65nm, Ind temp, TSOPII 86 Package RoHS: Compliant Min Qty: 108 Package Multiple: 108 0
  • 108 $2.1400
  • 540 $2.0300
$2.0300 / $2.1400 Buy Now
Chip1Cloud SD 2Mx32 166MHz Ind 10900
RFQ

Part Details for W9864G2JH-6I

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W9864G2JH-6I Part Data Attributes:

W9864G2JH-6I Winbond Electronics Corp
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W9864G2JH-6I Winbond Electronics Corp Synchronous DRAM, 4MX32, 5ns, CMOS, PDSO86, TSOPII-86
Rohs Code Yes
Part Life Cycle Code Not Recommended
Ihs Manufacturer WINBOND ELECTRONICS CORP
Part Package Code TSOP2
Package Description TSOP2, TSSOP86,.46,20
Pin Count 86
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8542.32.00.02
Samacsys Manufacturer Winbond
Access Mode FOUR BANK PAGE BURST
Access Time-Max 5 ns
Additional Feature AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 166 MHz
I/O Type COMMON
Interleaved Burst Length 1,2,4,8
JESD-30 Code R-PDSO-G86
JESD-609 Code e3
Length 22.22 mm
Memory Density 134217728 bit
Memory IC Type SYNCHRONOUS DRAM
Memory Width 32
Number of Functions 1
Number of Ports 1
Number of Terminals 86
Number of Words 4194304 words
Number of Words Code 4000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 85 °C
Operating Temperature-Min -40 °C
Organization 4MX32
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code TSOP2
Package Equivalence Code TSSOP86,.46,20
Package Shape RECTANGULAR
Package Style SMALL OUTLINE, THIN PROFILE
Qualification Status Not Qualified
Refresh Cycles 4096
Seated Height-Max 1.2 mm
Self Refresh YES
Sequential Burst Length 1,2,4,8,FP
Standby Current-Max 0.002 A
Supply Current-Max 0.13 mA
Supply Voltage-Max (Vsup) 3.6 V
Supply Voltage-Min (Vsup) 3 V
Supply Voltage-Nom (Vsup) 3.3 V
Surface Mount YES
Technology CMOS
Temperature Grade INDUSTRIAL
Terminal Finish TIN
Terminal Form GULL WING
Terminal Pitch 0.5 mm
Terminal Position DUAL
Width 10.16 mm

Alternate Parts for W9864G2JH-6I

This table gives cross-reference parts and alternative options found for W9864G2JH-6I. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of W9864G2JH-6I, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
K4S643232F-TC45 Synchronous DRAM, 2MX32, 4ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, TSOP2-86 Samsung Semiconductor W9864G2JH-6I vs K4S643232F-TC45
HY57V643220CLTP-8 Synchronous DRAM, 2MX32, 6ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.5 MM PITCH, LEAD FREE, TSOP2-86 SK Hynix Inc W9864G2JH-6I vs HY57V643220CLTP-8
MB81E643242-13FN Synchronous DRAM, 2MX32, 7ns, CMOS, PDSO86, 0.400 INCH, PLASTIC, TSOP2-86 FUJITSU Limited W9864G2JH-6I vs MB81E643242-13FN
UPD4564323G5-A80-9JH 2MX32 SYNCHRONOUS DRAM, 6ns, PDSO86, 0.400 INCH, PLASTIC, TSOP2-86 Renesas Electronics Corporation W9864G2JH-6I vs UPD4564323G5-A80-9JH
HY57V643220CLT-SI Synchronous DRAM, 2MX32, 6ns, CMOS, PDSO86, 0.400 X 0.875 INCH, TSOP2-86 SK Hynix Inc W9864G2JH-6I vs HY57V643220CLT-SI
KM432S2030BT-FL Synchronous DRAM, 2MX32, 6ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, PLASTIC, TSOP2-86 Samsung Semiconductor W9864G2JH-6I vs KM432S2030BT-FL
IS42S32200-7T Synchronous DRAM, 2MX32, 6ns, CMOS, PDSO86, 0.400 INCH, TSOP2-86 Integrated Silicon Solution Inc W9864G2JH-6I vs IS42S32200-7T
K4S643234E-TE800 Synchronous DRAM, 2MX32, 6ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, TSOP2-86 Samsung Semiconductor W9864G2JH-6I vs K4S643234E-TE800
HY57V643220CT-5 Synchronous DRAM, 2MX32, 4.5ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.5 MM PITCH, TSOP2-86 SK Hynix Inc W9864G2JH-6I vs HY57V643220CT-5
VG36643242BT-8 Synchronous DRAM, 2MX32, 6ns, CMOS, PDSO86, 0.400 INCH, PLASTIC, TSOP-86 Vanguard International Semiconductor Corporation W9864G2JH-6I vs VG36643242BT-8

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