Part Details for W987D2HBJX6E by Winbond Electronics Corp
Overview of W987D2HBJX6E by Winbond Electronics Corp
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for W987D2HBJX6E
| Part # | Distributor | Description | Stock | Price | Buy | |
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NAC | 128Mb LPSDR, x32, 166MHz, VFBGA90 Package RoHS: Compliant Min Qty: 240 Package Multiple: 240 | 0 |
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$2.3600 / $2.4800 | Buy Now |
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Chip 1 Exchange | INSTOCK | 11272 |
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RFQ |
Part Details for W987D2HBJX6E
W987D2HBJX6E CAD Models
W987D2HBJX6E Part Data Attributes:
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W987D2HBJX6E
Winbond Electronics Corp
Buy Now
Datasheet
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W987D2HBJX6E
Winbond Electronics Corp
Synchronous DRAM, 4MX32, 5.4ns, CMOS, PBGA90, VFBGA-90
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| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | WINBOND ELECTRONICS CORP | |
| Package Description | VFBGA-90 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.02 | |
| Samacsys Manufacturer | Winbond | |
| Access Mode | FOUR BANK PAGE BURST | |
| Access Time-Max | 5.4 ns | |
| Additional Feature | AUTO/SELF REFRESH | |
| Clock Frequency-Max (fCLK) | 166 MHz | |
| I/O Type | COMMON | |
| Interleaved Burst Length | 1,2,4,8 | |
| JESD-30 Code | R-PBGA-B90 | |
| Length | 13 mm | |
| Memory Density | 134217728 bit | |
| Memory IC Type | SYNCHRONOUS DRAM | |
| Memory Width | 32 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 90 | |
| Number of Words | 4194304 words | |
| Number of Words Code | 4000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 85 °C | |
| Operating Temperature-Min | -25 °C | |
| Organization | 4MX32 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | TFBGA | |
| Package Equivalence Code | BGA90,9X15,32 | |
| Package Shape | RECTANGULAR | |
| Package Style | GRID ARRAY, THIN PROFILE, FINE PITCH | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Qualification Status | Not Qualified | |
| Refresh Cycles | 4096 | |
| Seated Height-Max | 1.025 mm | |
| Self Refresh | YES | |
| Sequential Burst Length | 1,2,4,8,FP | |
| Standby Current-Max | 0.00001 A | |
| Supply Current-Max | 0.075 mA | |
| Supply Voltage-Max (Vsup) | 1.95 V | |
| Supply Voltage-Min (Vsup) | 1.7 V | |
| Supply Voltage-Nom (Vsup) | 1.8 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | OTHER | |
| Terminal Form | BALL | |
| Terminal Pitch | 0.8 mm | |
| Terminal Position | BOTTOM | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Width | 8 mm |
Alternate Parts for W987D2HBJX6E
This table gives cross-reference parts and alternative options found for W987D2HBJX6E. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of W987D2HBJX6E, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| EDS2532AABH-1AR2-E | Synchronous DRAM, 8MX32, 6ns, CMOS, PBGA90, LEAD FREE, FBGA-90 | Elpida Memory Inc | W987D2HBJX6E vs EDS2532AABH-1AR2-E |
| K4S283233F-HC1L0 | Synchronous DRAM, 4MX32, 7ns, CMOS, PBGA90, LEAD FREE, FBGA-90 | Samsung Semiconductor | W987D2HBJX6E vs K4S283233F-HC1L0 |
| EDS2732AABH-75L-E | Synchronous DRAM, 8MX32, 5.4ns, CMOS, PBGA90, LEAD FREE, FBGA-90 | Elpida Memory Inc | W987D2HBJX6E vs EDS2732AABH-75L-E |
| K4S283233E-DC1L0 | Synchronous DRAM, 4MX32, 7ns, CMOS, PBGA90, 11 X 13 MM, LEAD FREE, FBGA-90 | Samsung Semiconductor | W987D2HBJX6E vs K4S283233E-DC1L0 |
| K4X56323PI-7EC60 | DDR DRAM, 8MX32, 5.5ns, CMOS, PBGA90, LEAD FREE, FBGA-90 | Samsung Semiconductor | W987D2HBJX6E vs K4X56323PI-7EC60 |
| K4S56323LF-FL750 | Synchronous DRAM, 8MX32, 6ns, CMOS, PBGA90, FBGA-90 | Samsung Semiconductor | W987D2HBJX6E vs K4S56323LF-FL750 |
| K4S28323LE-HL750 | Synchronous DRAM, 4MX32, 6ns, CMOS, PBGA90, 9 X 13 MM, LEAD FREE, FBGA-90 | Samsung Semiconductor | W987D2HBJX6E vs K4S28323LE-HL750 |
| K4M28323PH-FF900 | Synchronous DRAM, 4MX32, 7ns, CMOS, PBGA90, FBGA-90 | Samsung Semiconductor | W987D2HBJX6E vs K4M28323PH-FF900 |
| IS42S32800G-75EBLI | Synchronous DRAM, 8MX32, 5.5ns, CMOS, PBGA90, 8 X 13 MM, LEAD FREE, MO-207, TFBGA-90 | Integrated Silicon Solution Inc | W987D2HBJX6E vs IS42S32800G-75EBLI |
| HY57W2A3220T-B | Synchronous DRAM, 4MX32, 9ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, TSOP2-86 | SK Hynix Inc | W987D2HBJX6E vs HY57W2A3220T-B |