Datasheets
W987D2HBJX7E by: Winbond Electronics Corp

Synchronous DRAM, 4MX32, 5.4ns, CMOS, PBGA90, VFBGA-90

Part Details for W987D2HBJX7E by Winbond Electronics Corp

Overview of W987D2HBJX7E by Winbond Electronics Corp

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Price & Stock for W987D2HBJX7E

Part # Distributor Description Stock Price Buy
NAC 128Mb LPSDR, x32, 133MHz, 65nm, VFBGA90 Package RoHS: Compliant Min Qty: 240 Package Multiple: 240 0
  • 240 $2.4800
  • 1,200 $2.3600
$2.3600 / $2.4800 Buy Now

Part Details for W987D2HBJX7E

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W987D2HBJX7E Part Data Attributes:

W987D2HBJX7E Winbond Electronics Corp
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W987D2HBJX7E Winbond Electronics Corp Synchronous DRAM, 4MX32, 5.4ns, CMOS, PBGA90, VFBGA-90
Rohs Code Yes
Part Life Cycle Code Not Recommended
Ihs Manufacturer WINBOND ELECTRONICS CORP
Package Description VFBGA-90
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8542.32.00.02
Access Mode FOUR BANK PAGE BURST
Access Time-Max 5.4 ns
Additional Feature AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 133 MHz
I/O Type COMMON
Interleaved Burst Length 1,2,4,8
JESD-30 Code R-PBGA-B90
Length 13 mm
Memory Density 134217728 bit
Memory IC Type SYNCHRONOUS DRAM
Memory Width 32
Number of Functions 1
Number of Ports 1
Number of Terminals 90
Number of Words 4194304 words
Number of Words Code 4000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 85 °C
Operating Temperature-Min -25 °C
Organization 4MX32
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code TFBGA
Package Equivalence Code BGA90,9X15,32
Package Shape RECTANGULAR
Package Style GRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Cel) NOT SPECIFIED
Qualification Status Not Qualified
Refresh Cycles 4096
Seated Height-Max 1.025 mm
Self Refresh YES
Sequential Burst Length 1,2,4,8,FP
Standby Current-Max 0.00001 A
Supply Current-Max 0.07 mA
Supply Voltage-Max (Vsup) 1.95 V
Supply Voltage-Min (Vsup) 1.7 V
Supply Voltage-Nom (Vsup) 1.8 V
Surface Mount YES
Technology CMOS
Temperature Grade OTHER
Terminal Form BALL
Terminal Pitch 0.8 mm
Terminal Position BOTTOM
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Width 8 mm

Alternate Parts for W987D2HBJX7E

This table gives cross-reference parts and alternative options found for W987D2HBJX7E. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of W987D2HBJX7E, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
W987D2HBJX7G Synchronous DRAM, 4MX32, 5.4ns, CMOS, PBGA90, VFBGA-90 Winbond Electronics Corp W987D2HBJX7E vs W987D2HBJX7G
Part Number Description Manufacturer Compare
K4S28323LE-HL1H0 Synchronous DRAM, 4MX32, 7ns, CMOS, PBGA90, 9 X 13 MM, LEAD FREE, FBGA-90 Samsung Semiconductor W987D2HBJX7E vs K4S28323LE-HL1H0
MT46H8M32LGB5-5AT:H DDR DRAM, 8MX32, 5ns, CMOS, PBGA90, 10 X 13 MM, GREEN, PLASTIC, VFBGA-90 Micron Technology Inc W987D2HBJX7E vs MT46H8M32LGB5-5AT:H
K4M56323LE-ES800 Synchronous DRAM, 8MX32, 6ns, CMOS, PBGA90, 0.80 MM PITCH, LEAD FREE, FBGA-90 Samsung Semiconductor W987D2HBJX7E vs K4M56323LE-ES800
K4M56323LG-HF600 Synchronous DRAM, 8MX32, 5.4ns, CMOS, PBGA90, LEAD FREE, FBGA-90 Samsung Semiconductor W987D2HBJX7E vs K4M56323LG-HF600
K4S283233E-FC1H0 Synchronous DRAM, 4MX32, 7ns, CMOS, PBGA90, 9 X 13 MM, FBGA-90 Samsung Semiconductor W987D2HBJX7E vs K4S283233E-FC1H0
K4M56323LD-EU80 Synchronous DRAM, 8MX32, 6ns, CMOS, PBGA90, FBGA-90 Samsung Semiconductor W987D2HBJX7E vs K4M56323LD-EU80
HY5MS5B2LF-S DDR DRAM, 8MX32, 7ns, CMOS, PBGA90, 8 X 13 MM, 1 MM HEIGHT, 0.80 MM PITCH, FBGA-90 SK Hynix Inc W987D2HBJX7E vs HY5MS5B2LF-S
EDS2732CABB-75L-E Synchronous DRAM, 8MX32, 5.4ns, CMOS, PBGA90, FBGA-90 Elpida Memory Inc W987D2HBJX7E vs EDS2732CABB-75L-E
K4S28323LE-HL750 Synchronous DRAM, 4MX32, 6ns, CMOS, PBGA90, 9 X 13 MM, LEAD FREE, FBGA-90 Samsung Semiconductor W987D2HBJX7E vs K4S28323LE-HL750
MT46H8M32LGCM-54:H DDR DRAM, 8MX32, 5ns, CMOS, PBGA90 Micron Technology Inc W987D2HBJX7E vs MT46H8M32LGCM-54:H

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