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21 - 30 of 8,945 results
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JANTXV1N5307-1
Defense Logistics Agency
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Check for Price | Active | 2 V | 2.4 mA | 500 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | NO | 100 V | 1 | FIELD EFFECT | Qualified | O-XALF-W2 | MIL-19500/463G | DO-7 | ISOLATED | 2 | UNSPECIFIED | ROUND | LONG FORM | WIRE | AXIAL | DEFENSE LOGISTICS AGENCY | HERMETIC SEALED PACKAGE-2 | unknown | ||||||||||||||||||
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JANKC1N5286
Compensated Devices Inc
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Check for Price | Transferred | 1 V | 300 µA | SILICON | CURRENT REGULATOR DIODE | SINGLE | YES | 1 | FIELD EFFECT | Not Qualified | S-XUUC-N1 | MIL-19500/463 | 1 | UNSPECIFIED | SQUARE | UNCASED CHIP | NO LEAD | UPPER | COMPENSATED DEVICES INC | DIE-1 | unknown | ||||||||||||||||||||||
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1N5295BKTIN/LEAD
Central Semiconductor Corp
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Check for Price | No | Active | 1.25 V | 820 µA | 600 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | NO | 100 V | 1 | FIELD EFFECT | 1 MΩ | ISOLATED | CENTRAL SEMICONDUCTOR CORP | not_compliant | EAR99 | ||||||||||||||||||||||||||
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1N5309-1
Microsemi Corporation
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Check for Price | No | No | Transferred | 2.25 V | 3 mA | 500 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | NO | 100 V | 1 | FIELD EFFECT | METALLURGICALLY BONDED | 300 kΩ | Not Qualified | O-XALF-W2 | e0 | DO-35 | ISOLATED | 2 | UNSPECIFIED | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROSEMI CORP | DO-35, 2 PIN | unknown | EAR99 | DO-7 | 2 | 8541.10.00.70 | Microsemi Corporation | ||||||||
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JANS1N5292UR-1
Compensated Devices Inc
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Check for Price | Transferred | 1.13 V | 620 µA | 500 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | YES | 100 V | 1 | FIELD EFFECT | METALLURGICALLY BONDED | 470 kΩ | Not Qualified | O-XELF-R2 | MIL-19500/463G | DO-213AB | 175 °C | -65 °C | ISOLATED | 2 | UNSPECIFIED | ROUND | LONG FORM | WRAP AROUND | END | COMPENSATED DEVICES INC | HERMETIC SEALED PACKAGE-2 | unknown | ||||||||||||||
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1N5298TR-RMCU
Central Semiconductor Corp
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Check for Price | No | No | Active | 1.4 V | 1.1 mA | 600 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | NO | 100 V | 1 | FIELD EFFECT | HIGH RELIABILITY | Not Qualified | O-LALF-W2 | e0 | DO-35 | 200 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | CENTRAL SEMICONDUCTOR CORP | HERMETIC SEALED, GLASS PACKAGE-2 | not_compliant | EAR99 | DO-35 | 2 | 8541.10.00.70 | ||||||||
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1N5299CO
Cobham Semiconductor Solutions
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Check for Price | No | Transferred | 1.45 V | 1.2 mA | 600 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | YES | 1 | FIELD EFFECT | Not Qualified | X-XUUC-N | e0 | NOT SPECIFIED | NOT SPECIFIED | UNSPECIFIED | UNSPECIFIED | UNCASED CHIP | TIN LEAD | NO LEAD | UPPER | AEROFLEX/METELICS INC | X-XUUC-N | unknown | EAR99 | DIE | 1 | 8541.10.00.40 | ||||||||||||||
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JANHCA1N5284
Microsemi Corporation
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Check for Price | No | Transferred | 1 V | 240 µA | SILICON | CURRENT REGULATOR DIODE | SINGLE | YES | 1 | FIELD EFFECT | Not Qualified | S-XXUC-N2 | e0 | MIL-19500/463G | CATHODE | 2 | UNSPECIFIED | SQUARE | UNCASED CHIP | Tin/Lead (Sn/Pb) | NO LEAD | UNSPECIFIED | MICROSEMI CORP | HERMETIC SEALED, DIE-2 | compliant | EAR99 | DIE | 2 | 8541.10.00.40 | ||||||||||||||
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1N5314UR-1
Compensated Devices Inc
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Check for Price | Transferred | 2.9 V | 4.7 mA | 500 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | YES | 100 V | 1 | FIELD EFFECT | 12 kΩ | Not Qualified | O-LELF-R2 | e0 | DO-213AB | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WRAP AROUND | END | COMPENSATED DEVICES INC | HERMETIC SEALED, GLASS, LL41, MELF-2 | unknown | ||||||||||||||
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JANTXV1N5285
Cobham PLC
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Check for Price | No | Obsolete | 1 V | 270 µA | 500 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | NO | 100 V | 1 | FIELD EFFECT | 14 MΩ | 1.95 MΩ | Not Qualified | O-LALF-W2 | e0 | MIL-19500/463 | DO-7 | 200 °C | -55 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | KNOX SEMICONDUCTORS INC | O-LALF-W2 | unknown | EAR99 | DO-7 | 2 | 8541.10.00.70 |