Parametric results for: 1N5302 under Current Regulator Diodes
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JANTX1N5302UR-1
Microchip Technology Inc
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$39.4207 | No | Active | 1.6 V | 1.5 mA | 500 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | YES | 100 V | 1 | FIELD EFFECT | METALLURGICALLY BONDED | Qualified | O-LELF-R2 | e0 | MIL-19500 | DO-213AB | 1 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WRAP AROUND | END | MICROCHIP TECHNOLOGY INC | HERMETIC SEALED, GLASS, LL41, MELF-2 | compliant | |||||||||
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JANTX1N5302UR-1
Microsemi Corporation
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$40.4745 | No | No | Transferred | 1.6 V | 1.5 mA | 500 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | YES | 1 | FIELD EFFECT | METALLURGICALLY BONDED | Not Qualified | O-LELF-R2 | e0 | MIL-19500 | DO-213AB | 1 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WRAP AROUND | END | MICROSEMI CORP | HERMETIC SEALED, GLASS, LL41, MELF-2 | unknown | DO-213AB | 2 | EAR99 | 8541.10.00.70 | |||||
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JANTXV1N5302UR-1
Microchip Technology Inc
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$41.8603 | No | Active | 1.6 V | 1.5 mA | 500 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | YES | 100 V | 1 | FIELD EFFECT | METALLURGICALLY BONDED | Qualified | O-LELF-R2 | e0 | MIL-19500 | DO-213AB | 1 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WRAP AROUND | END | MICROCHIP TECHNOLOGY INC | HERMETIC SEALED, GLASS, LL41, MELF-2 | compliant | |||||||||
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JANS1N5302-1
Microchip Technology Inc
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$102.8722 | No | Active | 1.6 V | 1.5 mA | 500 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | NO | 100 V | 1 | FIELD EFFECT | 510 kΩ | Qualified | O-LALF-W2 | e0 | MIL-PRF-19500 | DO-7 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | DO-35, 2 PIN | compliant | ||||||||||
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JANS1N5302-1/TR
Microchip Technology Inc
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$103.0213 | No | Active | 1.6 V | 1.5 mA | 500 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | NO | 100 V | 1 | FIELD EFFECT | 510 kΩ | O-LALF-W2 | e0 | MIL-PRF-19500 | DO-7 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | compliant | ||||||||||||
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JANS1N5302UR-1/TR
Microchip Technology Inc
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$134.2201 | No | Active | 1.6 V | 1.5 mA | 500 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | YES | 100 V | 1 | FIELD EFFECT | HIGH SOURCE IMPEDANCE | 510 kΩ | 105 kΩ | O-LELF-R2 | e0 | MIL-19500 | DO-213AB | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WRAP AROUND | END | MICROCHIP TECHNOLOGY INC | MELF-2 | compliant | |||||||||
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JANS1N5302UR-1
Microchip Technology Inc
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$135.3461 | No | Active | 1.6 V | 1.5 mA | 500 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | YES | 100 V | 1 | FIELD EFFECT | METALLURGICALLY BONDED | Qualified | O-LELF-R2 | e0 | MIL-19500 | DO-213AB | 1 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WRAP AROUND | END | MICROCHIP TECHNOLOGY INC | HERMETIC SEALED, GLASS, LL41, MELF-2 | compliant | |||||||||
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1N5302-1
Cobham Semiconductor Solutions
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Check for Price | Transferred | CURRENT REGULATOR DIODE | AEROFLEX/METELICS INC | unknown | EAR99 | ||||||||||||||||||||||||||||||||||||
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1N5302CO
Aeroflex Inc
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Check for Price | No | Transferred | 1.6 V | 1.5 mA | 600 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | YES | 1 | FIELD EFFECT | 105 kΩ | Not Qualified | X-XUUC-N | e0 | 200 °C | -55 °C | UNSPECIFIED | UNSPECIFIED | UNCASED CHIP | TIN LEAD | NO LEAD | UPPER | KNOX SEMICONDUCTORS INC | X-XUUC-N | unknown | DIE | 1 | EAR99 | 8541.10.00.40 | |||||||||||
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JAN1N5302-1
VPT Components
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Check for Price | Yes | Active | 1.6 V | 1.5 mA | 500 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | NO | 100 V | 1 | FIELD EFFECT | HIGH SOURCE IMPEDANCE | Qualified | O-LALF-W2 | MIL-19500 | DO-7 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WIRE | AXIAL | VPT COMPONENTS | compliant | EAR99 | 8541.10.00.70 |