Parametric results for: LSP1000 under PIN Diodes

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BAR64-05W-E3-18
Vishay Intertechnologies
$0.1455 Yes Active 0.5 pF 0.5 pF SILICON 100 V PIN DIODE COMMON CATHODE, 2 ELEMENTS YES 2 POSITIVE-INTRINSIC-NEGATIVE HIGH VOLTAGE ATTENUATOR; SWITCHING HIGH FREQUENCY TO S BAND 1.4 µs R-PDSO-G3 125 °C -55 °C 3 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE GULL WING DUAL VISHAY INTERTECHNOLOGY INC SOT-323, 3 PIN unknown Vishay
BAR66E6327HTSA1
Infineon Technologies AG
$0.1464 Yes Yes Active 0.6 pF 250 mW 1.8 Ω SILICON 150 V PIN DIODE SERIES CONNECTED, CENTER TAP, 2 ELEMENTS YES 2 POSITIVE-INTRINSIC-NEGATIVE 700 ns Not Qualified R-PDSO-G3 1 260 NOT SPECIFIED 3 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE GULL WING DUAL INFINEON TECHNOLOGIES AG R-PDSO-G3 compliant Infineon EAR99 8541.10.00.80
RN739FT106
ROHM Semiconductor
$0.1493 Yes Yes Active 0.4 pF 200 mW 7 Ω SILICON 50 V PIN DIODE SERIES CONNECTED, CENTER TAP, 2 ELEMENTS YES 2 POSITIVE-INTRINSIC-NEGATIVE ATTENUATOR 10 mA 100 MHz VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY 50 V Not Qualified R-PDSO-G3 e1 125 °C NOT SPECIFIED NOT SPECIFIED 3 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Tin/Silver/Copper (Sn/Ag/Cu) GULL WING DUAL ROHM CO LTD compliant ROHM Semiconductor EAR99 8541.10.00.80
BAP64-06,215
NXP Semiconductors
$0.1494 Yes Obsolete 0.35 pF 0.52 pF 250 mW 1.35 Ω SILICON 175 V PIN DIODE COMMON ANODE, 2 ELEMENTS YES 2 POSITIVE-INTRINSIC-NEGATIVE HIGH VOLTAGE ATTENUATOR; SWITCHING 500 µA 100 MHz S BAND 1.55 µs Not Qualified R-PDSO-G3 e3 TO-236AB 1 150 °C -65 °C 260 30 3 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Tin (Sn) GULL WING DUAL NXP SEMICONDUCTORS PLASTIC, SMD, SST3, 3 PIN compliant NXP EAR99 8541.10.00 TO-236 3 SOT23
BAR6405WH6327XTSA1
Infineon Technologies AG
$0.1518 Yes Active 0.35 pF 1.35 Ω SILICON 150 V PIN DIODE COMMON CATHODE, 2 ELEMENTS 2 POSITIVE-INTRINSIC-NEGATIVE 1.55 µs e3 1 NOT SPECIFIED NOT SPECIFIED Tin (Sn) INFINEON TECHNOLOGIES AG compliant Infineon EAR99
BAP70-02,115
NXP Semiconductors
$0.1556 Yes Obsolete 0.25 pF 0.57 pF 415 mW 1.9 Ω SILICON 50 V PIN DIODE SINGLE YES 1 POSITIVE-INTRINSIC-NEGATIVE HIGH VOLTAGE ATTENUATOR 500 µA 100 MHz 1.25 µs Not Qualified R-PDSO-F2 e3 1 150 °C -65 °C 260 30 2 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Tin (Sn) FLAT DUAL NXP SEMICONDUCTORS ULTRA SMALL, PLASTIC, SC-79, 2 PIN compliant NXP EAR99 8541.10.00 SOD 2 SOD523
BAR6406E6327HTSA1
Infineon Technologies AG
$0.1574 Yes Active 0.35 pF 1.35 Ω SILICON 150 V PIN DIODE COMMON ANODE, 2 ELEMENTS 2 POSITIVE-INTRINSIC-NEGATIVE 1.55 µs e3 1 NOT SPECIFIED NOT SPECIFIED Tin (Sn) INFINEON TECHNOLOGIES AG compliant Infineon EAR99
BAR6404WH6327XTSA1
Infineon Technologies AG
$0.1668 Yes Active 0.35 pF 1.35 Ω SILICON 150 V PIN DIODE SERIES CONNECTED, CENTER TAP, 2 ELEMENTS 2 POSITIVE-INTRINSIC-NEGATIVE 1.55 µs e3 1 NOT SPECIFIED NOT SPECIFIED Tin (Sn) INFINEON TECHNOLOGIES AG compliant Infineon EAR99
BAP64-02,115
NXP Semiconductors
$0.1698 Yes Not Recommended 0.35 pF 0.48 pF 715 mW 1.35 Ω SILICON 175 V PIN DIODE SINGLE YES 1 POSITIVE-INTRINSIC-NEGATIVE HIGH VOLTAGE ATTENUATOR; SWITCHING 500 µA 100 MHz S BAND 1.55 µs Not Qualified R-PDSO-F2 e3 1 150 °C -65 °C 260 30 2 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Tin (Sn) FLAT DUAL NXP SEMICONDUCTORS ULTRA SMALL, PLASTIC, SC-79, 2 PIN compliant NXP EAR99 8541.10.00 SOD 2 SOD523
BAR6402ELE6327XTMA1
Infineon Technologies AG
$0.1699 Yes Active 0.35 pF 0.13 pF 1.35 Ω SILICON 150 V PIN DIODE SINGLE YES 1 POSITIVE-INTRINSIC-NEGATIVE 1 mA 100 MHz 1.55 µs e4 1 125 °C NOT SPECIFIED NOT SPECIFIED Gold (Au) INFINEON TECHNOLOGIES AG compliant Infineon EAR99