Parametric results for: 1N5461B%2BJAN under Varactors

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BB179B,115
NXP Semiconductors
$0.1423 Yes Obsolete 19.11 pF SILICON VARIABLE CAPACITANCE DIODE SINGLE YES 35 V 1 2% MATCHED SETS OF 10 DIODES ARE AVAILABLE 4.66 % 8.45 ULTRA HIGH FREQUENCY ABRUPT Not Qualified R-PDSO-F2 e3 125 °C -55 °C 2 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE TIN FLAT DUAL NXP SEMICONDUCTORS SOD R-PDSO-F2 2 SOD523 unknown EAR99 8541.10.00.70 NXP
BB187,115
NXP Semiconductors
$0.1423 Yes Obsolete 31.75 pF SILICON 32 V VARIABLE CAPACITANCE DIODE SINGLE YES 35 V 1 2% MATCHED SETS OF 10 DIODES ARE AVAILABLE 11 VERY HIGH FREQUENCY ABRUPT Not Qualified R-PDSO-F2 e3 125 °C -55 °C 2 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE TIN FLAT DUAL NXP SEMICONDUCTORS SOD ULTRA SMALL, PLASTIC, SC-79, 2 PIN 2 SOD523 unknown EAR99 8541.10.00.70
1SV239(TPH3,F)
Toshiba America Electronic Components
$0.1462 Yes Active 4.25 pF VARIABLE CAPACITANCE DIODE SINGLE YES 15 V 1 2 ABRUPT SMALL OUTLINE TOSHIBA CORP unknown EAR99 8541.10.00.80
1SV281(TPH3,F)
Toshiba America Electronic Components
$0.1471 Yes Active 16 pF VARIABLE CAPACITANCE DIODE SINGLE YES 10 V 1 1.8 ABRUPT SMALL OUTLINE TOSHIBA CORP unknown EAR99 8541.10.00.80 Toshiba
BB148,115
NXP Semiconductors
$0.1537 Yes Obsolete 39.3 pF 10 nA SILICON VARIABLE CAPACITANCE DIODE SINGLE YES 30 V 1 2% MATCHED SETS OF 10 DIODES ARE AVAILABLE 14.5 VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY 30 V ABRUPT Not Qualified R-PDSO-G2 e3 125 °C -55 °C 2 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE TIN GULL WING DUAL NXP SEMICONDUCTORS SOD PLASTIC, SC-76, 2 PIN 2 SOD323 unknown EAR99 8541.10.00.70 NXP
BB149,115
NXP Semiconductors
$0.1537 Yes Obsolete 18.75 pF SILICON VARIABLE CAPACITANCE DIODE SINGLE YES 30 V 1 2% MATCHED SETS OF 10 DIODES ARE AVAILABLE 4 % 8.2 ULTRA HIGH FREQUENCY ABRUPT Not Qualified R-PDSO-G2 e3 125 °C -55 °C 2 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE TIN GULL WING DUAL NXP SEMICONDUCTORS SOD PLASTIC, SC-76, 2 PIN 2 SOD323 unknown EAR99 8541.10.00.70 NXP
1SV311(TPH3,F)
Toshiba America Electronic Components
$0.1560 Yes Active 10.4 pF VARIABLE CAPACITANCE DIODE SINGLE YES 10 V 1 1.8 ABRUPT SMALL OUTLINE TOSHIBA CORP unknown EAR99 8541.10.00.80
BB640E6327HTSA1
Infineon Technologies AG
$0.1593 Yes Yes Not Recommended 69 pF SILICON VARIABLE CAPACITANCE DIODE SINGLE YES 1 19.5 ABRUPT Not Qualified R-PDSO-G2 e3 1 NOT SPECIFIED NOT SPECIFIED 2 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Tin (Sn) GULL WING DUAL INFINEON TECHNOLOGIES AG SOD R-PDSO-G2 2 SOD-323 compliant EAR99 8541.10.00.80 Infineon 1997-02-01
BB545E7904HTSA1
Infineon Technologies AG
$0.1597 Yes Obsolete 20 pF SILICON VARIABLE CAPACITANCE DIODE SINGLE YES 1 LOW INDUCTANCE 7.5 % 9 ULTRA HIGH FREQUENCY ABRUPT R-PDSO-G2 e3 1 150 °C -55 °C 2 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE TIN GULL WING DUAL INFINEON TECHNOLOGIES AG SOD-323, 2 PIN compliant EAR99 8541.10.00.80 Infineon
1SV324(TPH3,F)
Toshiba America Electronic Components
$0.1613 Yes Active 46.75 pF VARIABLE CAPACITANCE DIODE SINGLE YES 10 V 1 4 ABRUPT SMALL OUTLINE TOSHIBA CORP unknown EAR99 8541.10.00.80 Toshiba