Parametric results for: HY57V under DRAMs

Filter Your Search

31 - 40 of 266,974 results

|
-
-
-
-
-
-
-
-
-
-
-
-
-
Select parts from the table below to compare.
Compare
Compare
MTA18ASF2G72PDZ-3G2E1
Micron Technology Inc
$1.0000 Obsolete 154.6188 Gbit 72 2GX72 1.2 V 1.6 GHz DUAL BANK PAGE BURST DDR4 DRAM MODULE AUTO/SELF REFRESH; WD-MAX COMMON 8 1 1 2000000000 2.1475 G SYNCHRONOUS OPEN-DRAIN YES 8 1.26 V 1.14 V CMOS OTHER R-XDMA-N288 95 °C NOT SPECIFIED NOT SPECIFIED 288 UNSPECIFIED DIMM DIMM288,33 RECTANGULAR MICROELECTRONIC ASSEMBLY NO NO LEAD DUAL 31.55 mm 133.35 mm 3.9 mm MICRON TECHNOLOGY INC DIMM, compliant EAR99 8542.32.00.36 2017-06-25 Micron
IS41LV16105D-50TLI-TR
Integrated Silicon Solution Inc
$1.0000 Yes Active 16.7772 Mbit 16 1MX16 3.3 V 25 ns FAST PAGE FAST PAGE DRAM AUTO/SELF REFRESH 1 1 1000000 1.0486 M ASYNCHRONOUS YES 3.6 V 3 V CMOS INDUSTRIAL R-PDSO-G44 85 °C -40 °C NOT SPECIFIED NOT SPECIFIED 44 PLASTIC/EPOXY TSOP2 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES GULL WING 800 µm DUAL 1.2 mm 20.95 mm 10.16 mm INTEGRATED SILICON SOLUTION INC TSOP2-50/44 compliant EAR99 8542.32.00.02
MT40A1G16KNR-062E:E
Micron Technology Inc
$1.0000 Obsolete 17.1799 Gbit 16 1GX16 1.2 V 8192 SINGLE BANK PAGE BURST DDR4 DRAM AUTO REFRESH 1 1 1000000000 1.0737 G SYNCHRONOUS 1.26 V 1.14 V CMOS OTHER R-PBGA-B96 e1 95 °C 260 30 96 PLASTIC/EPOXY TFBGA BGA96,9X16,32 RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES TIN SILVER COPPER BALL 800 µm BOTTOM 1.2 mm 13.5 mm 7.5 mm MICRON TECHNOLOGY INC TFBGA, compliant EAR99 8542.32.00.36 Micron
IS46LQ32128A-062BLA1
Integrated Silicon Solution Inc
$1.0000 Yes Active 4.295 Gbit 32 128MX32 1.6 GHz MULTI BANK PAGE BURST LPDDR4 DRAM TERM PITCH-MAX; ALSO AVAILABLE WITH 1.7V TO 1.95V SUPPLY COMMON 1 1 128000000 134.2177 M SYNCHRONOUS NO 1.17 V 1.06 V CMOS INDUSTRIAL R-PBGA-B200 95 °C -40 °C 200 PLASTIC/EPOXY VFBGA BGA200,12X22,32/25 RECTANGULAR GRID ARRAY, VERY THIN PROFILE, FINE PITCH YES BALL 800 µm BOTTOM 850 µm 14.5 mm 10 mm INTEGRATED SILICON SOLUTION INC FBGA-200 compliant EAR99 8542.32.00.36 Integrated Silicon Solution Inc.
IS46LQ16256AL-062BLA1
Integrated Silicon Solution Inc
$1.0000 Yes Active 4.295 Gbit 16 256MX16 1.6 GHz MULTI BANK PAGE BURST LPDDR4X DRAM TERM PITCH-MAX; ALSO AVAILABLE WITH 1.7V TO 1.95V SUPPLY COMMON 1 1 256000000 268.4355 M SYNCHRONOUS NO 1.17 V 1.06 V CMOS INDUSTRIAL R-PBGA-B200 95 °C -40 °C 200 PLASTIC/EPOXY VFBGA BGA200,12X22,32/25 RECTANGULAR GRID ARRAY, VERY THIN PROFILE, FINE PITCH YES BALL 800 µm BOTTOM 850 µm 14.5 mm 10 mm INTEGRATED SILICON SOLUTION INC FBGA-200 compliant EAR99 8542.32.00.36 Integrated Silicon Solution Inc.
IS49NLS18320A-25WBL
Integrated Silicon Solution Inc
$1.0000 Yes Active 603.9798 Mbit 18 32MX18 1.8 V MULTI BANK PAGE BURST DDR DRAM AUTO REFRESH 1 1 32000000 33.5544 M SYNCHRONOUS 1.9 V 1.7 V CMOS R-PBGA-B144 NOT SPECIFIED NOT SPECIFIED 144 PLASTIC/EPOXY TBGA RECTANGULAR GRID ARRAY, THIN PROFILE YES BALL 1 mm BOTTOM 1.2 mm 18.5 mm 11 mm INTEGRATED SILICON SOLUTION INC TBGA, compliant EAR99 8542.32.00.32
IS49NLS96400A-25WBL
Integrated Silicon Solution Inc
$1.0000 Yes Active 603.9798 Mbit 9 64MX9 1.8 V MULTI BANK PAGE BURST DDR DRAM AUTO REFRESH 1 1 64000000 67.1089 M SYNCHRONOUS 1.9 V 1.7 V CMOS R-PBGA-B144 NOT SPECIFIED NOT SPECIFIED 144 PLASTIC/EPOXY TBGA RECTANGULAR GRID ARRAY, THIN PROFILE YES BALL 1 mm BOTTOM 1.2 mm 18.5 mm 11 mm INTEGRATED SILICON SOLUTION INC TBGA, compliant EAR99 8542.32.00.32 Integrated Silicon Solution Inc.
IS46LQ32256A-062BLA2-TR
Integrated Silicon Solution Inc
$1.0000 Yes Active 8.5899 Gbit 32 256MX32 1.1 V 1.6 GHz 8192 MULTI BANK PAGE BURST LPDDR4 DRAM COMMON 16,32 1 1 256000000 268.4355 M SYNCHRONOUS 3-STATE YES 16,32 4.8 mA 660 µA 1.17 V 1.06 V CMOS R-PBGA-B200 105 °C -40 °C 260 AEC-Q100 30 200 PLASTIC/EPOXY TFBGA BGA200,12X22,32/25 RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES BALL 800 µm BOTTOM 1.1 mm 14.5 mm 10 mm INTEGRATED SILICON SOLUTION INC compliant
IS46LQ16128AL-062BLA1-TR
Integrated Silicon Solution Inc
$1.0000 Active 2.1475 Gbit 16 128MX16 1.1 V 1.6 GHz 8192 MULTI BANK PAGE BURST LPDDR4X DRAM COMMON 16,32 1 1 128000000 134.2177 M SYNCHRONOUS 3-STATE YES 16,32 1.2 mA 305 µA 1.17 V 1.06 V CMOS R-PBGA-B200 95 °C -40 °C AEC-Q100 200 PLASTIC/EPOXY VFBGA BGA200,12X22,32/25 RECTANGULAR GRID ARRAY, VERY THIN PROFILE, FINE PITCH YES BALL 800 µm BOTTOM 850 µm 14.5 mm 10 mm INTEGRATED SILICON SOLUTION INC unknown
MT40A2G4SA-062E:E
Micron Technology Inc
$1.0000 Obsolete 8.5899 Gbit 4 2GX4 1.2 V 1.6 GHz 8192 MULTI BANK PAGE BURST DDR4 DRAM COMMON 8 1 1 2000000000 2.1475 G SYNCHRONOUS YES 8 1.26 V 1.14 V CMOS OTHER R-PBGA-B78 e1 95 °C 260 30 78 PLASTIC/EPOXY TFBGA BGA78,9X13,32 RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES TIN SILVER COPPER BALL 800 µm BOTTOM 1.2 mm 11 mm 7.5 mm MICRON TECHNOLOGY INC TFBGA, compliant EAR99 8542.32.00.36 2017-07-13 Micron