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31 - 40 of 266,973 results
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MTA18ASF2G72PDZ-3G2E1
Micron Technology Inc
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$1.0000 | Obsolete | 154.6188 Gbit | 72 | 2GX72 | 1.2 V | 1.6 GHz | DUAL BANK PAGE BURST | DDR4 DRAM MODULE | AUTO/SELF REFRESH; WD-MAX | COMMON | 8 | 1 | 1 | 2000000000 | 2.1475 G | SYNCHRONOUS | OPEN-DRAIN | YES | 8 | 1.26 V | 1.14 V | CMOS | OTHER | R-XDMA-N288 | 95 °C | NOT SPECIFIED | NOT SPECIFIED | 288 | UNSPECIFIED | DIMM | DIMM288,33 | RECTANGULAR | MICROELECTRONIC ASSEMBLY | NO | NO LEAD | DUAL | 31.55 mm | 133.35 mm | 3.9 mm | MICRON TECHNOLOGY INC | DIMM, | compliant | EAR99 | 8542.32.00.36 | 2017-06-25 | Micron | ||||||||||||
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IS41LV16105D-50TLI-TR
Integrated Silicon Solution Inc
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$1.0000 | Yes | Active | 16.7772 Mbit | 16 | 1MX16 | 3.3 V | 25 ns | FAST PAGE | FAST PAGE DRAM | AUTO/SELF REFRESH | 1 | 1 | 1000000 | 1.0486 M | ASYNCHRONOUS | YES | 3.6 V | 3 V | CMOS | INDUSTRIAL | R-PDSO-G44 | 85 °C | -40 °C | NOT SPECIFIED | NOT SPECIFIED | 44 | PLASTIC/EPOXY | TSOP2 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | GULL WING | 800 µm | DUAL | 1.2 mm | 20.95 mm | 10.16 mm | INTEGRATED SILICON SOLUTION INC | TSOP2-50/44 | compliant | EAR99 | 8542.32.00.02 | Integrated Silicon Solution Inc. | |||||||||||||||
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MT40A1G16KNR-062E:E
Micron Technology Inc
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$1.0000 | Obsolete | 17.1799 Gbit | 16 | 1GX16 | 1.2 V | 8192 | SINGLE BANK PAGE BURST | DDR4 DRAM | AUTO REFRESH | 1 | 1 | 1000000000 | 1.0737 G | SYNCHRONOUS | 1.26 V | 1.14 V | CMOS | OTHER | R-PBGA-B96 | e1 | 95 °C | 260 | 30 | 96 | PLASTIC/EPOXY | TFBGA | BGA96,9X16,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | TIN SILVER COPPER | BALL | 800 µm | BOTTOM | 1.2 mm | 13.5 mm | 7.5 mm | MICRON TECHNOLOGY INC | TFBGA, | compliant | EAR99 | 8542.32.00.36 | Micron | |||||||||||||||
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IS46LQ32128A-062BLA1
Integrated Silicon Solution Inc
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$1.0000 | Yes | Active | 4.295 Gbit | 32 | 128MX32 | 1.6 GHz | MULTI BANK PAGE BURST | LPDDR4 DRAM | TERM PITCH-MAX; ALSO AVAILABLE WITH 1.7V TO 1.95V SUPPLY | COMMON | 1 | 1 | 128000000 | 134.2177 M | SYNCHRONOUS | NO | 1.17 V | 1.06 V | CMOS | INDUSTRIAL | R-PBGA-B200 | 95 °C | -40 °C | 200 | PLASTIC/EPOXY | VFBGA | BGA200,12X22,32/25 | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | YES | BALL | 800 µm | BOTTOM | 850 µm | 14.5 mm | 10 mm | INTEGRATED SILICON SOLUTION INC | FBGA-200 | compliant | EAR99 | 8542.32.00.36 | Integrated Silicon Solution Inc. | ||||||||||||||||
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IS46LQ16256AL-062BLA1
Integrated Silicon Solution Inc
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$1.0000 | Yes | Active | 4.295 Gbit | 16 | 256MX16 | 1.6 GHz | MULTI BANK PAGE BURST | LPDDR4X DRAM | TERM PITCH-MAX; ALSO AVAILABLE WITH 1.7V TO 1.95V SUPPLY | COMMON | 1 | 1 | 256000000 | 268.4355 M | SYNCHRONOUS | NO | 1.17 V | 1.06 V | CMOS | INDUSTRIAL | R-PBGA-B200 | 95 °C | -40 °C | 200 | PLASTIC/EPOXY | VFBGA | BGA200,12X22,32/25 | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | YES | BALL | 800 µm | BOTTOM | 850 µm | 14.5 mm | 10 mm | INTEGRATED SILICON SOLUTION INC | FBGA-200 | compliant | EAR99 | 8542.32.00.36 | Integrated Silicon Solution Inc. | ||||||||||||||||
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IS49NLS18320A-25WBL
Integrated Silicon Solution Inc
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$1.0000 | Yes | Active | 603.9798 Mbit | 18 | 32MX18 | 1.8 V | MULTI BANK PAGE BURST | DDR DRAM | AUTO REFRESH | 1 | 1 | 32000000 | 33.5544 M | SYNCHRONOUS | 1.9 V | 1.7 V | CMOS | R-PBGA-B144 | NOT SPECIFIED | NOT SPECIFIED | 144 | PLASTIC/EPOXY | TBGA | RECTANGULAR | GRID ARRAY, THIN PROFILE | YES | BALL | 1 mm | BOTTOM | 1.2 mm | 18.5 mm | 11 mm | INTEGRATED SILICON SOLUTION INC | TBGA, | compliant | EAR99 | 8542.32.00.32 | |||||||||||||||||||||
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IS49NLS96400A-25WBL
Integrated Silicon Solution Inc
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$1.0000 | Yes | Active | 603.9798 Mbit | 9 | 64MX9 | 1.8 V | MULTI BANK PAGE BURST | DDR DRAM | AUTO REFRESH | 1 | 1 | 64000000 | 67.1089 M | SYNCHRONOUS | 1.9 V | 1.7 V | CMOS | R-PBGA-B144 | NOT SPECIFIED | NOT SPECIFIED | 144 | PLASTIC/EPOXY | TBGA | RECTANGULAR | GRID ARRAY, THIN PROFILE | YES | BALL | 1 mm | BOTTOM | 1.2 mm | 18.5 mm | 11 mm | INTEGRATED SILICON SOLUTION INC | TBGA, | compliant | EAR99 | 8542.32.00.32 | Integrated Silicon Solution Inc. | ||||||||||||||||||||
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IS46LQ16128AL-062BLA1-TR
Integrated Silicon Solution Inc
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$1.0000 | Active | 2.1475 Gbit | 16 | 128MX16 | 1.1 V | 1.6 GHz | 8192 | MULTI BANK PAGE BURST | LPDDR4X DRAM | COMMON | 16,32 | 1 | 1 | 128000000 | 134.2177 M | SYNCHRONOUS | 3-STATE | YES | 16,32 | 1.2 mA | 305 µA | 1.17 V | 1.06 V | CMOS | R-PBGA-B200 | 95 °C | -40 °C | AEC-Q100 | 200 | PLASTIC/EPOXY | VFBGA | BGA200,12X22,32/25 | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | YES | BALL | 800 µm | BOTTOM | 850 µm | 14.5 mm | 10 mm | INTEGRATED SILICON SOLUTION INC | unknown | |||||||||||||||
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IS46LQ32256A-062BLA2-TR
Integrated Silicon Solution Inc
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$1.0000 | Yes | Active | 8.5899 Gbit | 32 | 256MX32 | 1.1 V | 1.6 GHz | 8192 | MULTI BANK PAGE BURST | LPDDR4 DRAM | COMMON | 16,32 | 1 | 1 | 256000000 | 268.4355 M | SYNCHRONOUS | 3-STATE | YES | 16,32 | 200 µA | 530 µA | 1.17 V | 1.06 V | CMOS | R-PBGA-B200 | 105 °C | -40 °C | 260 | AEC-Q100 | 30 | 200 | PLASTIC/EPOXY | TFBGA | BGA200,12X22,32/25 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | BALL | 800 µm | BOTTOM | 1.1 mm | 14.5 mm | 10 mm | INTEGRATED SILICON SOLUTION INC | compliant | ||||||||||||
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MT40A2G4SA-062E:E
Micron Technology Inc
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$1.0000 | Obsolete | 8.5899 Gbit | 4 | 2GX4 | 1.2 V | 1.6 GHz | 8192 | MULTI BANK PAGE BURST | DDR4 DRAM | COMMON | 8 | 1 | 1 | 2000000000 | 2.1475 G | SYNCHRONOUS | YES | 8 | 1.26 V | 1.14 V | CMOS | OTHER | R-PBGA-B78 | e1 | 95 °C | 260 | 30 | 78 | PLASTIC/EPOXY | TFBGA | BGA78,9X13,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | TIN SILVER COPPER | BALL | 800 µm | BOTTOM | 1.2 mm | 11 mm | 7.5 mm | MICRON TECHNOLOGY INC | TFBGA, | compliant | EAR99 | 8542.32.00.36 | 2017-07-13 | Micron |