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NV25010MUW3VTBG
 onsemi 		Check for Price Yes Active 1.024 kbit 8 128X8 5 V 10 MHz EEPROM IT ALSO OPERATES AT 1.8 TO 5.5V SUPPLY VOLTAGE AT 5 MHZ FREQUENCY 100 1000000 Write/Erase Cycles 1 1 128 128 words SYNCHRONOUS 3-STATE SERIAL 5 V SPI 5 µA 3 µA 5.5 V 2.5 V CMOS AUTOMOTIVE 5 ms HARDWARE/SOFTWARE R-PDSO-N8 e4 1 125 °C -40 °C 260 AEC-Q100 30 8 PLASTIC/EPOXY HUSSON SOLCC8,.11,20 RECTANGULAR SMALL OUTLINE, HEAT SINK/SLUG, ULTRA THIN PROFILE, SHRINK PITCH YES Nickel/Palladium/Gold (Ni/Pd/Au) NO LEAD 500 µm DUAL 550 µm 3 mm 2 mm ONSEMI UDFN-8 517DH compliant EAR99 8542.32.00.51 onsemi
AT93C46D-TH-T
 Microchip Technology Inc 		$0.1910 Yes Yes Active 1.024 kbit 16 64X16 5 V 2 MHz EEPROM ALSO OPERATES AT 1MHZ AT 2.7MIN AND AT 0.25MHZ AT 1.8MIN 8 100 1000000 Write/Erase Cycles SEPARATE 1 1 64 64 words SYNCHRONOUS 3-STATE SERIAL 5 V NO 3-WIRE 15 µA 2 µA 5.5 V 4.5 V CMOS INDUSTRIAL 5 ms HARDWARE R-PDSO-G8 Not Qualified e4 1 85 °C -40 °C 260 40 8 PLASTIC/EPOXY TSSOP TSSOP8,.25 RECTANGULAR SMALL OUTLINE, THIN PROFILE, SHRINK PITCH YES Nickel/Palladium/Gold (Ni/Pd/Au) GULL WING 650 µm DUAL 1.2 mm 4.4 mm 3 mm MICROCHIP TECHNOLOGY INC TSSOP-8 compliant 3A991.A.2 8542.31.00.01 Microchip
AT93C46E-PU
 Microchip Technology Inc 		$0.4719 Yes Yes Active 1.024 kbit 16 64X16 5 V 2 MHz EEPROM ALSO OPERATES AT 1MHZ AT 2.7MIN AND AT 0.25MHZ AT 1.8MIN 100 1000000 Write/Erase Cycles SEPARATE 1 1 64 64 words SYNCHRONOUS 3-STATE SERIAL 5 V NO 3-WIRE 15 µA 2 µA 5.5 V 4.5 V CMOS INDUSTRIAL 5 ms HARDWARE R-PDIP-T8 Not Qualified e3 85 °C -40 °C 8 PLASTIC/EPOXY DIP DIP8,.3 RECTANGULAR IN-LINE NO MATTE TIN THROUGH-HOLE 2.54 mm DUAL 5.334 mm 9.271 mm 7.62 mm MICROCHIP TECHNOLOGY INC DIP-8 compliant 3A991.A.2 8542.31.00.01 Microchip
AT93C46DY6-YH-E
 Microchip Technology Inc 		$0.2634 Yes Active 1.024 kbit 16 64X16 5 V 2 MHz EEPROM ALSO OPERATES AT 1MHZ AT 2.7MIN AND AT 0.25MHZ AT 1.8MIN 8 100 1000000 Write/Erase Cycles SEPARATE 1 1 64 64 words SYNCHRONOUS 3-STATE SERIAL 5 V NO 3-WIRE 15 µA 2 µA 5.5 V 4.5 V CMOS INDUSTRIAL 5 ms HARDWARE R-PDSO-N8 e4 1 85 °C -40 °C 260 40 8 PLASTIC/EPOXY HVSON SOLCC8,.12,20 RECTANGULAR SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE, SHRINK PITCH YES NICKEL PALLADIUM GOLD NO LEAD 500 µm DUAL 600 µm 3 mm 2 mm MICROCHIP TECHNOLOGY INC UDFN-8 compliant EAR99 8542.32.00.51 Microchip
MT61K256M32JE-21:T
 Micron Technology Inc 		Check for Price Yes Obsolete 8.5899 Gbit 32 256MX32 1.25 V FOUR BANK PAGE BURST GDDR6 DRAM AUTO/SELF REFRESH; ALSO OPERATES AT 1.35 V 16 COMMON 1 1 256000000 268.4355 M SYNCHRONOUS OPEN-DRAIN YES 1.2875 V 1.2125 V CMOS OTHER R-PBGA-B180 95 °C 180 PLASTIC/EPOXY TFBGA BGA180,14X18,30 RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES BALL 750 µm BOTTOM 1.2 mm 14 mm 12 mm MICRON TECHNOLOGY INC unknown EAR99 8542.32.00.36 Micron
AT93C46DY6-YH-T
 Microchip Technology Inc 		$0.2856 Yes Yes Active 1.024 kbit 16 64X16 5 V 2 MHz EEPROM ALSO OPERATES AT 1MHZ AT 2.7MIN AND AT 0.25MHZ AT 1.8MIN 8 100 1000000 Write/Erase Cycles SEPARATE 1 1 64 64 words SYNCHRONOUS 3-STATE SERIAL 5 V NO 3-WIRE 15 µA 2 µA 5.5 V 4.5 V CMOS INDUSTRIAL 5 ms HARDWARE R-PDSO-N8 Not Qualified e4 1 85 °C -40 °C 260 40 8 PLASTIC/EPOXY HVSON SOLCC8,.12,20 RECTANGULAR SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE, SHRINK PITCH YES NICKEL PALLADIUM GOLD NO LEAD 500 µm DUAL 600 µm 3 mm 2 mm MICROCHIP TECHNOLOGY INC UDFN-8 compliant 3A991.A.2 8542.31.00.01 Microchip
NV24C32MUW3VTBG
 onsemi 		Check for Price Yes Active 32.768 kbit 8 4KX8 3.3 V 400 kHz EEPROM 100 1000000 Write/Erase Cycles 1010DDDR 1 1 4000 4.096 k SYNCHRONOUS OPEN-DRAIN SERIAL I2C 5 µA 2 µA 5.5 V 2.5 V CMOS AUTOMOTIVE 5 ms HARDWARE R-PDSO-N8 e4 1 125 °C -40 °C 260 AEC-Q100 30 8 PLASTIC/EPOXY HVSON SOLCC8,.12,20 RECTANGULAR SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE YES Nickel/Palladium/Gold (Ni/Pd/Au) NO LEAD 500 µm DUAL 550 µm 3 mm 2 mm ONSEMI UDFN-8 517DH compliant EAR99 8542.32.00.51 onsemi 2018-05-17
NV24C256MUW3VTBG
 onsemi 		Check for Price Yes Active 262.144 kbit 8 32KX8 3.3 V 1 MHz EEPROM 100 1000000 Write/Erase Cycles 1010DDDR 1 1 32000 32.768 k SYNCHRONOUS SERIAL I2C 5 µA 3 µA 5.5 V 2.5 V CMOS AUTOMOTIVE 5 ms HARDWARE R-PDSO-N8 e4 1 125 °C -40 °C 260 AEC-Q100 30 8 PLASTIC/EPOXY HVSON SOLCC8,.12,20 RECTANGULAR SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE YES Nickel/Palladium/Gold (Ni/Pd/Au) NO LEAD 500 µm DUAL 550 µm 3 mm 2 mm ONSEMI UDFN-8 517DH compliant EAR99 8542.32.00.51 onsemi 2018-05-17
NV24C64MUW3VTBG
 onsemi 		Check for Price Yes Active 65.536 kbit 1 64KX1 1 MHz EEPROM 100 1000000 Write/Erase Cycles 1010DDDR 1 1 64000 65.536 k SYNCHRONOUS 32 words SERIAL I2C 2 µA 1 µA 5.5 V 1.8 V CMOS AUTOMOTIVE 4 ms HARDWARE R-PDSO-N8 e4 1 125 °C -40 °C 260 AEC-Q100 30 8 PLASTIC/EPOXY HVSON SOLCC8,.12,20 RECTANGULAR SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE YES Nickel/Palladium/Gold (Ni/Pd/Au) NO LEAD 500 µm DUAL 550 µm 3 mm 2 mm ON SEMICONDUCTOR , 517DH compliant EAR99 8542.32.00.51 onsemi
NV25020MUW3VTBG
 onsemi 		Check for Price Yes Active 2.048 kbit 8 256X8 5 V 10 MHz EEPROM 100 1000000 Write/Erase Cycles 1 1 256 256 words SYNCHRONOUS 3-STATE SERIAL 5 V SPI 5 µA 3 µA 5.5 V 1.8 V CMOS AUTOMOTIVE 5 ms HARDWARE/SOFTWARE R-PDSO-N8 e4 1 125 °C -40 °C 260 AEC-Q100 30 8 PLASTIC/EPOXY HUSSON SOLCC8,.11,20 RECTANGULAR SMALL OUTLINE, HEAT SINK/SLUG, ULTRA THIN PROFILE, SHRINK PITCH YES Nickel/Palladium/Gold (Ni/Pd/Au) NO LEAD 500 µm DUAL 550 µm 3 mm 2 mm ONSEMI UDFN-8 517DH compliant EAR99 8542.32.00.51 onsemi
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