Parametric results for: SST25VF080B-50-4I-S2AF PROGRAM under Flash Memories

All Filters Clock Frequency-Max (fCLK) Data Retention Time-Min Endurance JESD-30 Code JESD-609 Code Length Manufacturer Memory Density Memory IC Type Memory Width Moisture Sensitivity Level Number of Functions Number of Ports Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style Supply Voltage-Nom (Vsup) Clock Frequency-Max (fCLK) (2)

50 MHz 12 80 MHz 15

Min (MHz) - Max (MHz)

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100 27

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100000.0 Write/Erase Cycles 22

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R-PDIP-T8 3 R-PDSO-G8 6 R-PDSO-N8 10 S-PBGA-B16 1 S-PDSO-G8 7

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e3 13 e4 7

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2 mm 1 4.9 mm 2 5.275 mm 7 6 mm 10 9.271 mm 3

Min (mm) - Max (mm)

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Manufacturer (2)

Microchip Technology Inc 19 Silicon Storage Technology 8

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Memory Density (1)

8.3886 Mbit 27

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FLASH 27

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Memory Width (1)

8 27

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1 2 3 7

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1.0 27

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1 7

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16 1 8 26

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1.0486 M 27

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1000000.0 27

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SYNCHRONOUS 27

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70.0 °C 15 85.0 °C 12

Min (°C) - Max (°C)

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-40.0 °C 12 0.0 °C 15

Min (°C) - Max (°C)

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Organization (1)

1MX8 27

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3-STATE 27

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PLASTIC/EPOXY 27

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DIP 3 HVSON 10 SOP 13 VFBGA 1

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BGA16,4X2,20 1 DIP8,.3 3 SOLCC8,.25 10 SOP8,.25 4 SOP8,.3 9

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RECTANGULAR 19 SQUARE 8

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GRID ARRAY, VERY THIN PROFILE, FINE PITCH 1 IN-LINE 3 SMALL OUTLINE 13 SMALL OUTLINE, VERY THIN PROFILE 10

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Supply Voltage-Nom (Vsup) (1)

3 V 27

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