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S29GL512S10DHI020
Cypress Semiconductor
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$10.8653 | Yes | Transferred | 536.8709 Mbit | 8 | 64K | 64MX8 | 3 V | 100 ns | FLASH | BOTTOM/TOP | YES | YES | YES | 1 | 512 | 64000000 | 67.1089 M | ASYNCHRONOUS | 16 words | PARALLEL | 3 V | YES | 100 µA | 80 µA | 3.6 V | 2.7 V | CMOS | INDUSTRIAL | YES | NOR TYPE | S-PBGA-B64 | Not Qualified | e1 | 3 | 85 °C | -40 °C | 260 | 30 | 64 | PLASTIC/EPOXY | LBGA | BGA64,8X8,40 | SQUARE | GRID ARRAY, LOW PROFILE | YES | Tin/Silver/Copper (Sn/Ag/Cu) | BALL | 1 mm | BOTTOM | 1.4 mm | 9 mm | 9 mm | CYPRESS SEMICONDUCTOR CORP | compliant | 3A991.B.1.A | 8542.32.00.51 | |||||||||||
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S29GL512S10DHI020
Infineon Technologies AG
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$9.2845 | Yes | Active | 536.8709 Mbit | 8 | 128K | 64MX8 | 3 V | 100 ns | FLASH | 20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES | 1 | BOTTOM/TOP | YES | YES | YES | 2 | 100000 Write/Erase Cycles | 1 | 512 | 64000000 | 67.1089 M | ASYNCHRONOUS | 3-STATE | 32 words | PARALLEL | 3 V | YES | 100 µA | 100 µA | 3.6 V | 2.7 V | CMOS | YES | NAND TYPE | S-PBGA-B64 | e1 | 3 | 85 °C | -40 °C | 260 | 30 | 64 | PLASTIC/EPOXY | LBGA | BGA64,8X8,40 | SQUARE | GRID ARRAY, LOW PROFILE | YES | Tin/Silver/Copper (Sn/Ag/Cu) | BALL | 1 mm | BOTTOM | 1.4 mm | 9 mm | 9 mm | INFINEON TECHNOLOGIES AG | compliant | Infineon | |||||||||
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S29GL512S10DHI020
Spansion
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Check for Price | Yes | Transferred | 536.8709 Mbit | 8 | 64K | 64MX8 | 3 V | 100 ns | FLASH | YES | YES | YES | 1 | 512 | 64000000 | 67.1089 M | ASYNCHRONOUS | 16 words | PARALLEL | 2.7 V | YES | 100 µA | 80 µA | 3.6 V | 2.7 V | CMOS | INDUSTRIAL | YES | NOR TYPE | S-PBGA-B64 | Not Qualified | e1 | 3 | 85 °C | -40 °C | 260 | 40 | 64 | PLASTIC/EPOXY | LBGA | BGA64,8X8,40 | SQUARE | GRID ARRAY, LOW PROFILE | YES | TIN SILVER COPPER | BALL | 1 mm | BOTTOM | 1.4 mm | 9 mm | 9 mm | SPANSION INC | compliant | 3A991.B.1.A | 8542.32.00.51 | BGA | LEAD FREE, PACKAGE | 64 |