Findchips: Parametric Search Results for s29gl512s10dhi020


Select Parts		Part Number

		S29GL512S10DHI020 Infineon Technologies AG
		S29GL512S10DHI020 Cypress Semiconductor
		S29GL512S10DHI020 Spansion

			Most Relevant						Technical																											Compliance			Operating Conditions					Physical											Dimensions			Other
Composite Price	Rohs Code	Part Life Cycle Code	Memory Density	Memory Width	Sector Size	Organization	Supply Voltage-Nom (Vsup)	Access Time-Max	Memory IC Type	Additional Feature	Alternate Memory Width	Boot Block	Command User Interface	Common Flash Interface	Data Polling	Data Retention Time-Min	Endurance	Number of Functions	Number of Sectors/Size	Number of Words Code	Number of Words	Operating Mode	Output Characteristics	Page Size	Parallel/Serial	Programming Voltage	Ready/Busy	Standby Current-Max	Supply Current-Max	Supply Voltage-Max (Vsup)	Supply Voltage-Min (Vsup)	Technology	Temperature Grade	Toggle Bit	Type	JESD-30 Code	Qualification Status	JESD-609 Code	Moisture Sensitivity Level	Operating Temperature-Max	Operating Temperature-Min	Peak Reflow Temperature (Cel)	Time@Peak Reflow Temperature-Max (s)	Number of Terminals	Package Body Material	Package Code	Package Equivalence Code	Package Shape	Package Style	Surface Mount	Terminal Finish	Terminal Form	Terminal Pitch	Terminal Position	Seated Height-Max	Length	Width	Ihs Manufacturer	Reach Compliance Code	Samacsys Manufacturer	ECCN Code	HTS Code	Part Package Code	Package Description	Pin Count

$9.2845

Yes

Active

536.8709 Mbit

128K

64MX8

3 V

100 ns

FLASH

20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES

BOTTOM/TOP

YES

100000 Write/Erase Cycles

512

64000000

67.1089 M

ASYNCHRONOUS

3-STATE

32 words

PARALLEL

3 V

YES

100 µA

3.6 V

2.7 V

CMOS

YES

NAND TYPE

S-PBGA-B64

85 °C

-40 °C

260

PLASTIC/EPOXY

LBGA

BGA64,8X8,40

SQUARE

GRID ARRAY, LOW PROFILE

YES

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

1 mm

BOTTOM

1.4 mm

9 mm

INFINEON TECHNOLOGIES AG

compliant

Infineon

$10.8653

Yes

Transferred

536.8709 Mbit

64K

64MX8

3 V

100 ns

FLASH

BOTTOM/TOP

YES

512

64000000

67.1089 M

ASYNCHRONOUS

16 words

PARALLEL

3 V

YES

100 µA

80 µA

3.6 V

2.7 V

CMOS

INDUSTRIAL

YES

NOR TYPE

S-PBGA-B64

Not Qualified

85 °C

-40 °C

260

PLASTIC/EPOXY

LBGA

BGA64,8X8,40

SQUARE

GRID ARRAY, LOW PROFILE

YES

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

1 mm

BOTTOM

1.4 mm

9 mm

CYPRESS SEMICONDUCTOR CORP

compliant

3A991.B.1.A

8542.32.00.51

Check for Price

Yes

Transferred

536.8709 Mbit

64K

64MX8

3 V

100 ns

FLASH

YES

512

64000000

67.1089 M

ASYNCHRONOUS

16 words

PARALLEL

2.7 V

YES

100 µA

80 µA

3.6 V

2.7 V

CMOS

INDUSTRIAL

YES

NOR TYPE

S-PBGA-B64

Not Qualified

85 °C

-40 °C

260

PLASTIC/EPOXY

LBGA

BGA64,8X8,40

SQUARE

GRID ARRAY, LOW PROFILE

YES

TIN SILVER COPPER

BALL

1 mm

BOTTOM

1.4 mm

9 mm

SPANSION INC

compliant

3A991.B.1.A

8542.32.00.51

BGA

LEAD FREE, PACKAGE

Compare

S29GL512S10DHI020

Infineon Technologies AG

$9.2845

Yes

Active

536.8709 Mbit

128K

64MX8

3 V

100 ns

FLASH

20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES

BOTTOM/TOP

YES

100000 Write/Erase Cycles

512

64000000

67.1089 M

ASYNCHRONOUS

3-STATE

32 words

PARALLEL

3 V

YES

100 µA

3.6 V

2.7 V

CMOS

YES

NAND TYPE

S-PBGA-B64

85 °C

-40 °C

260

PLASTIC/EPOXY

LBGA

BGA64,8X8,40

SQUARE

GRID ARRAY, LOW PROFILE

YES

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

1 mm

BOTTOM

1.4 mm

9 mm

INFINEON TECHNOLOGIES AG

compliant

Infineon

S29GL512S10DHI020

Cypress Semiconductor

$10.8653

Yes

Transferred

536.8709 Mbit

64K

64MX8

3 V

100 ns

FLASH

BOTTOM/TOP

YES

512

64000000

67.1089 M

ASYNCHRONOUS

16 words

PARALLEL

3 V

YES

100 µA

80 µA

3.6 V

2.7 V

CMOS

INDUSTRIAL

YES

NOR TYPE

S-PBGA-B64

Not Qualified

85 °C

-40 °C

260

PLASTIC/EPOXY

LBGA

BGA64,8X8,40

SQUARE

GRID ARRAY, LOW PROFILE

YES

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

1 mm

BOTTOM

1.4 mm

9 mm

CYPRESS SEMICONDUCTOR CORP

compliant

3A991.B.1.A

8542.32.00.51

S29GL512S10DHI020

Spansion

Check for Price

Yes

Transferred

536.8709 Mbit

64K

64MX8

3 V

100 ns

FLASH

YES

512

64000000

67.1089 M

ASYNCHRONOUS

16 words

PARALLEL

2.7 V

YES

100 µA

80 µA

3.6 V

2.7 V

CMOS

INDUSTRIAL

YES

NOR TYPE

S-PBGA-B64

Not Qualified

85 °C

-40 °C

260

PLASTIC/EPOXY

LBGA

BGA64,8X8,40

SQUARE

GRID ARRAY, LOW PROFILE

YES

TIN SILVER COPPER

BALL

1 mm

BOTTOM

1.4 mm

9 mm

SPANSION INC

compliant

3A991.B.1.A

8542.32.00.51

BGA

LEAD FREE, PACKAGE

Parametric results for: s29gl512s10dhi020 under Flash Memories