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MB84VD21081EA-70-PBS
FUJITSU Semiconductor Limited
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Check for Price | No | No | Active | 16.7772 Mbit | 16 | 1MX16 | 3 V | MEMORY CIRCUIT | 128K X 16 SRAM ALSO AVAILABLE | 1 | 1000000 | 1.0486 M | ASYNCHRONOUS | 3.3 V | 2.7 V | CMOS | INDUSTRIAL | R-PBGA-B56 | Not Qualified | e0 | 85 °C | -40 °C | 56 | PLASTIC/EPOXY | TFBGA | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | TIN LEAD | BALL | 800 µm | BOTTOM | 1.2 mm | 7.2 mm | 7 mm | FUJITSU LTD | BGA | TFBGA, | 56 | compliant | EAR99 | 8542.32.00.71 | ||||||||
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S71JL064H80BFW013
AMD
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Check for Price | Yes | Transferred | 67.1089 Mbit | 16 | 4MX16 | 3 V | 70 ns | MEMORY CIRCUIT | SRAM IS ORGANIZED AS 512K X 16 / 1M X 8; FLASH CAN ALSO BE ORGANIZED AS 8M X 8 | FLASH+SRAM | 1 | 4000000 | 4.1943 M | ASYNCHRONOUS | 45 µA | 3.3 V | 2.7 V | CMOS | OTHER | R-PBGA-B73 | Not Qualified | e1 | 3 | 85 °C | -25 °C | 73 | PLASTIC/EPOXY | LFBGA | BGA73,10X12,32 | RECTANGULAR | GRID ARRAY, LOW PROFILE, FINE PITCH | YES | TIN SILVER COPPER | BALL | 800 µm | BOTTOM | 1.4 mm | 11.6 mm | 8 mm | ADVANCED MICRO DEVICES INC | BGA | LFBGA, BGA73,10X12,32 | 73 | compliant | EAR99 | 8542.32.00.71 | ||||
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S71JL064HF0BFI022
Spansion
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Check for Price | Obsolete | 67.1089 Mbit | 16 | 4MX16 | 3 V | MEMORY CIRCUIT | STATIC RAM IS ORGANIZED AS 1M X 16 | 1 | 4000000 | 4.1943 M | ASYNCHRONOUS | 3.3 V | 2.7 V | CMOS | INDUSTRIAL | R-PBGA-B73 | Not Qualified | 85 °C | -40 °C | 73 | PLASTIC/EPOXY | LFBGA | RECTANGULAR | GRID ARRAY, LOW PROFILE, FINE PITCH | YES | BALL | 800 µm | BOTTOM | 1.4 mm | 11.6 mm | 8 mm | SPANSION INC | BGA | LFBGA, | 73 | unknown | EAR99 | 8542.32.00.71 | ||||||||||||
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IS71V16F32FS08-7070BI
Integrated Silicon Solution Inc
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Check for Price | No | No | Obsolete | 33.5544 Mbit | 16 | 2MX16 | 3 V | 70 ns | MEMORY CIRCUIT | ALSO CONTAINS 512K X 16/1M X 8 SRAM | FLASH+SRAM | 1 | 2000000 | 2.0972 M | ASYNCHRONOUS | 5 µA | 53 µA | 3.3 V | 2.7 V | CMOS | INDUSTRIAL | R-PBGA-B73 | Not Qualified | e0 | 85 °C | -40 °C | 73 | PLASTIC/EPOXY | LFBGA | BGA73,10X12,32 | RECTANGULAR | GRID ARRAY, LOW PROFILE, FINE PITCH | YES | TIN LEAD | BALL | 800 µm | BOTTOM | 1.4 mm | 11.6 mm | 8 mm | INTEGRATED SILICON SOLUTION INC | BGA | 8 X 11.60 MM, 0.80 MM PITCH, MINI, BGA-73 | 73 | compliant | EAR99 | 8542.32.00.71 | |||
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K5A3340YBC-T7550
Samsung Semiconductor
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Check for Price | Obsolete | 33.5544 Mbit | 16 | 2MX16 | 3 V | MEMORY CIRCUIT | SRAM IS ORGANIZED AS 512K X 8 / 256K X 1... more | 1 | 2000000 | 2.0972 M | ASYNCHRONOUS | 3.3 V | 2.7 V | CMOS | INDUSTRIAL | R-PBGA-B69 | Not Qualified | 85 °C | -40 °C | 69 | PLASTIC/EPOXY | TFBGA | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | BALL | 800 µm | BOTTOM | 1.2 mm | 11 mm | 8 mm | SAMSUNG SEMICONDUCTOR INC | BGA | TFBGA, | 69 | unknown | EAR99 | 8542.32.00.71 | ||||||||||||
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S72XS256RE0AHBH23
Cypress Semiconductor
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Check for Price | Transferred | 268.4355 Mbit | 16 | 16MX16 | 1.8 V | MEMORY CIRCUIT | 1 | 16000000 | 16.7772 M | SYNCHRONOUS | 1.95 V | 1.7 V | CMOS | INDUSTRIAL | S-PBGA-B133 | 85 °C | -40 °C | 133 | PLASTIC/EPOXY | VFBGA | SQUARE | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | YES | BALL | 500 µm | BOTTOM | 1 mm | 8 mm | 8 mm | CYPRESS SEMICONDUCTOR CORP | BGA-133 | compliant | EAR99 | 8542.32.00.71 | ||||||||||||||||
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MT28C256564W18SBT-F705P85TBWT
Micron Technology Inc
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Check for Price | Obsolete | 134.2177 Mbit | 16 | 8MX16 | MEMORY CIRCUIT | CELLULARRAM IS ORGANIZED AS 4M X 16; CONTAINS ADDITIONAL 8M X 16 FLASH | 1 | 8000000 | 8.3886 M | ASYNCHRONOUS | 1.95 V | 1.7 V | CMOS | OTHER | R-PBGA-B88 | Not Qualified | e1 | 85 °C | -25 °C | 88 | PLASTIC/EPOXY | LFBGA | RECTANGULAR | GRID ARRAY, LOW PROFILE, FINE PITCH | YES | TIN SILVER COPPER | BALL | 800 µm | BOTTOM | 1.4 mm | 12 mm | 9 mm | MICRON TECHNOLOGY INC | BGA | LFBGA, | 88 | unknown | EAR99 | 8542.32.00.71 | |||||||||||
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RD58F0012LVYBB0
Intel Corporation
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Check for Price | No | Obsolete | 268.4355 Mbit | 16 | 16MX16 | 1.8 V | 85 ns | MEMORY CIRCUIT | LPSDRAM IS ORGANIZED AS 128MBIT; ALSO CO... more | FLASH+SDRAM | 1 | 16000000 | 16.7772 M | ASYNCHRONOUS | 5 mA | 60 µA | 2 V | 1.7 V | CMOS | OTHER | R-PBGA-B103 | Not Qualified | e0 | 85 °C | -25 °C | 103 | PLASTIC/EPOXY | LFBGA | BGA103,9X12,32 | RECTANGULAR | GRID ARRAY, LOW PROFILE, FINE PITCH | YES | TIN LEAD | BALL | 800 µm | BOTTOM | 1.4 mm | 11 mm | 9 mm | INTEL CORP | BGA | LFBGA, BGA103,9X12,32 | 103 | compliant | EAR99 | 8542.32.00.71 | ||||
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MT28C128516W18DBW-F706P70KTTWT
Micron Technology Inc
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Check for Price | Yes | Yes | Obsolete | 67.1089 Mbit | 16 | 4MX16 | MEMORY CIRCUIT | CELLULARRAM IS ORGANIZED AS 1M X 16; CONTAINS ADDITIONAL 4M X 16 FLASH | 1 | 4000000 | 4.1943 M | ASYNCHRONOUS | 1.95 V | 1.7 V | CMOS | OTHER | R-PBGA-B77 | Not Qualified | e1 | 85 °C | -25 °C | 77 | PLASTIC/EPOXY | LFBGA | RECTANGULAR | GRID ARRAY, LOW PROFILE, FINE PITCH | YES | TIN SILVER COPPER | BALL | 800 µm | BOTTOM | 1.4 mm | 10 mm | 8 mm | MICRON TECHNOLOGY INC | BGA | LFBGA, | 77 | compliant | EAR99 | 8542.32.00.71 | |||||||||
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MB84VD22290FE-70PBS-E1
Spansion
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Check for Price | Yes | Obsolete | 33.5544 Mbit | 16 | 2MX16 | 3 V | MEMORY CIRCUIT | SRAM IS ORGANIZED AS 512K X 16 | 1 | 2000000 | 2.0972 M | ASYNCHRONOUS | 3.1 V | 2.7 V | CMOS | OTHER | R-PBGA-B59 | Not Qualified | e1 | 85 °C | -30 °C | 59 | PLASTIC/EPOXY | TFBGA | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | TIN SILVER COPPER | BALL | 800 µm | BOTTOM | 1.2 mm | 9 mm | 7 mm | SPANSION INC | BGA | TFBGA, | 59 | compliant | EAR99 | 8542.32.00.71 |