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MT40A512M8RH-075EAUT
Micron Technology Inc
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Check for Price | Yes | Obsolete | 4.295 Gbit | 8 | 512MX8 | 1.2 V | 1.3333 GHz | 8192 | MULTI BANK PAGE BURST | DDR4 DRAM | AUTO/SELF REFRESH | COMMON | 8 | 1 | 1 | 512000000 | 536.8709 M | SYNCHRONOUS | YES | 8 | 1.26 V | 1.14 V | CMOS | R-PBGA-B78 | 125 °C | -40 °C | NOT SPECIFIED | AEC-Q100 | NOT SPECIFIED | 78 | PLASTIC/EPOXY | TFBGA | BGA78,6X13,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | BALL | 800 µm | BOTTOM | 1.2 mm | 10.5 mm | 9 mm | MICRON TECHNOLOGY INC | , | compliant | EAR99 | 8542.32.00.36 | 2016-10-10 | |||||||
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MT40A512M8RH-075EAAT
Micron Technology Inc
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Check for Price | Yes | Obsolete | 4.295 Gbit | 8 | 512MX8 | 1.2 V | 1.3333 GHz | 8192 | MULTI BANK PAGE BURST | DDR4 DRAM | AUTO/SELF REFRESH | COMMON | 8 | 1 | 1 | 512000000 | 536.8709 M | SYNCHRONOUS | YES | 8 | 1.26 V | 1.14 V | CMOS | R-PBGA-B78 | 105 °C | -40 °C | NOT SPECIFIED | AEC-Q100 | NOT SPECIFIED | 78 | PLASTIC/EPOXY | TFBGA | BGA78,6X13,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | BALL | 800 µm | BOTTOM | 1.2 mm | 10.5 mm | 9 mm | MICRON TECHNOLOGY INC | , | compliant | EAR99 | 8542.32.00.36 | 2016-10-10 | |||||||
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MT40A512M8RH-075EIT
Micron Technology Inc
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Check for Price | Active | 4.295 Gbit | 8 | 512MX8 | 1.2 V | 1.3333 GHz | 8192 | MULTI BANK PAGE BURST | DDR4 DRAM | AUTO/SELF REFRESH | COMMON | 8 | 1 | 1 | 512000000 | 536.8709 M | SYNCHRONOUS | YES | 8 | 1.26 V | 1.14 V | CMOS | R-PBGA-B78 | 95 °C | -40 °C | 78 | PLASTIC/EPOXY | TFBGA | BGA78,6X13,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | BALL | 800 µm | BOTTOM | 1.2 mm | 10.5 mm | 9 mm | MICRON TECHNOLOGY INC | , | compliant | EAR99 | 8542.32.00.36 | 2016-10-10 | |||||||||||
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MT40A512M8RH-075EAIT
Micron Technology Inc
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Check for Price | Yes | Obsolete | 4.295 Gbit | 8 | 512MX8 | 1.2 V | 1.3333 GHz | 8192 | MULTI BANK PAGE BURST | DDR4 DRAM | AUTO/SELF REFRESH | COMMON | 8 | 1 | 1 | 512000000 | 536.8709 M | SYNCHRONOUS | YES | 8 | 1.26 V | 1.14 V | CMOS | R-PBGA-B78 | 95 °C | -40 °C | NOT SPECIFIED | AEC-Q100 | NOT SPECIFIED | 78 | PLASTIC/EPOXY | TFBGA | BGA78,6X13,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | BALL | 800 µm | BOTTOM | 1.2 mm | 10.5 mm | 9 mm | MICRON TECHNOLOGY INC | , | compliant | EAR99 | 8542.32.00.36 | 2016-10-10 | |||||||
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MT40A512M8RH-075E
Micron Technology Inc
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Check for Price | Active | 4.295 Gbit | 8 | 512MX8 | 1.2 V | 1.3333 GHz | 8192 | MULTI BANK PAGE BURST | DDR4 DRAM | AUTO/SELF REFRESH | COMMON | 8 | 1 | 1 | 512000000 | 536.8709 M | SYNCHRONOUS | YES | 8 | 1.26 V | 1.14 V | CMOS | R-PBGA-B78 | 78 | PLASTIC/EPOXY | TFBGA | BGA78,6X13,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | BALL | 800 µm | BOTTOM | 1.2 mm | 10.5 mm | 9 mm | MICRON TECHNOLOGY INC | , | compliant | EAR99 | 8542.32.00.36 | 2016-10-10 | |||||||||||||
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GS81314PD36GK-133
GSI Technology
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Check for Price | Yes | Active | 150.9949 Mbit | 36 | 4MX36 | 1.25 V | 1.333 GHz | QDR SRAM | SEPARATE | 1 | 4000000 | 4.1943 M | SYNCHRONOUS | 3-STATE | PARALLEL | 1.2 V | 1.35 V | 1.2 V | CMOS | OTHER | R-PBGA-B260 | Not Qualified | 85 °C | 260 | PLASTIC/EPOXY | HBGA | BGA260,13X20,40 | RECTANGULAR | GRID ARRAY, HEAT SINK/SLUG | YES | BALL | 1 mm | BOTTOM | 2.3 mm | 22 mm | 14 mm | GSI TECHNOLOGY | HBGA, BGA260,13X20,40 | compliant | 3A991.B.2.A | 8542.32.00.41 | ||||||||||||||
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GS81314PQ36GK-133I
GSI Technology
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Check for Price | Yes | Active | 150.9949 Mbit | 36 | 4MX36 | 1.25 V | 1.333 GHz | QDR SRAM | SEPARATE | 1 | 4000000 | 4.1943 M | SYNCHRONOUS | 3-STATE | PARALLEL | 1.2 V | 1.35 V | 1.2 V | CMOS | INDUSTRIAL | R-PBGA-B260 | Not Qualified | 85 °C | -40 °C | 260 | PLASTIC/EPOXY | HBGA | BGA260,13X20,40 | RECTANGULAR | GRID ARRAY, HEAT SINK/SLUG | YES | BALL | 1 mm | BOTTOM | 2.3 mm | 22 mm | 14 mm | GSI TECHNOLOGY | HBGA, BGA260,13X20,40 | compliant | 3A991.B.2.A | 8542.32.00.41 | |||||||||||||
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GS81314PD36GK-133I
GSI Technology
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Check for Price | Yes | Active | 150.9949 Mbit | 36 | 4MX36 | 1.25 V | 1.333 GHz | QDR SRAM | SEPARATE | 1 | 4000000 | 4.1943 M | SYNCHRONOUS | 3-STATE | PARALLEL | 1.2 V | 1.35 V | 1.2 V | CMOS | INDUSTRIAL | R-PBGA-B260 | Not Qualified | 85 °C | -40 °C | 260 | PLASTIC/EPOXY | HBGA | BGA260,13X20,40 | RECTANGULAR | GRID ARRAY, HEAT SINK/SLUG | YES | BALL | 1 mm | BOTTOM | 2.3 mm | 22 mm | 14 mm | GSI TECHNOLOGY | HBGA, BGA260,13X20,40 | compliant | 3A991.B.2.A | 8542.32.00.41 | |||||||||||||
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GS81314PQ18GK-133I
GSI Technology
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Check for Price | Yes | Active | 150.9949 Mbit | 18 | 8MX18 | 1.25 V | 1.333 GHz | QDR SRAM | SEPARATE | 1 | 8000000 | 8.3886 M | SYNCHRONOUS | 3-STATE | PARALLEL | 1.2 V | 1.35 V | 1.2 V | CMOS | INDUSTRIAL | R-PBGA-B260 | Not Qualified | 85 °C | -40 °C | 260 | PLASTIC/EPOXY | HBGA | BGA260,13X20,40 | RECTANGULAR | GRID ARRAY, HEAT SINK/SLUG | YES | BALL | 1 mm | BOTTOM | 2.3 mm | 22 mm | 14 mm | GSI TECHNOLOGY | HBGA, BGA260,13X20,40 | compliant | 3A991.B.2.A | 8542.32.00.41 | |||||||||||||
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GS81314PQ18GK-133
GSI Technology
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Check for Price | Yes | Active | 150.9949 Mbit | 18 | 8MX18 | 1.25 V | 1.333 GHz | QDR SRAM | SEPARATE | 1 | 8000000 | 8.3886 M | SYNCHRONOUS | 3-STATE | PARALLEL | 1.2 V | 1.35 V | 1.2 V | CMOS | OTHER | R-PBGA-B260 | Not Qualified | 85 °C | 260 | PLASTIC/EPOXY | HBGA | BGA260,13X20,40 | RECTANGULAR | GRID ARRAY, HEAT SINK/SLUG | YES | BALL | 1 mm | BOTTOM | 2.3 mm | 22 mm | 14 mm | GSI TECHNOLOGY | HBGA, BGA260,13X20,40 | compliant | 3A991.B.2.A | 8542.32.00.41 |