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11 - 20 of 196,142 results
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SIL260N03UK-TP
Micro Commercial Components
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$0.0408 | Yes | Active | 30 V | 1.51 A | 260 mΩ | e3 | 1 | 260 | 10 | Matte Tin (Sn) | Compliant | EAR99 | ||||||||||||||||||||||||||||||||||||
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YJL2312A
Yangzhou Yangjie Electronics Co Ltd
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$0.0425 | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 20 V | 1 | 6.8 A | 18 mΩ | 117 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 1.25 W | 1.25 W | 27 A | SWITCHING | SILICON | R-PDSO-G3 | 150 °C | -55 °C | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | DUAL | Compliant | EAR99 | SOT-23, 3 PIN | 2020-09-24 | ||||||||||||||||||
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YJL02N10A
Yangzhou Yangjie Electronics Co Ltd
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$0.0434 | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 100 V | 1 | 2 A | 310 mΩ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 1.3 W | 8 A | SWITCHING | SILICON | R-PDSO-G3 | NOT SPECIFIED | NOT SPECIFIED | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | DUAL | Compliant | EAR99 | 8541.29.00.95 | |||||||||||||||||||||
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DMN2041UVT-7
Diodes Incorporated
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$0.0461 | Yes | Active | N-CHANNEL | YES | COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE | 6 | 20 V | 2 | 5.8 A | 28 mΩ | 79 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 1.44 W | 36 A | SWITCHING | SILICON | R-PDSO-G6 | e3 | MIL-STD-202 | 1 | 150 °C | -55 °C | 260 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) | GULL WING | DUAL | Compliant | EAR99 | SOT-26 | 2019-10-15 | ||||||||||||||
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SQA410CEJW-T1_GE3
Vishay Intertechnologies
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$0.0464 | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 6 | 20 V | 1 | 7.8 A | 28 mΩ | 5 mJ | 58 pF | TRENCH MOSFET | ENHANCEMENT MODE | 13.6 W | 30 A | SILICON | 60 ns | 32 ns | S-PDSO-N6 | AEC-Q101 | 175 °C | -55 °C | PLASTIC/EPOXY | SQUARE | SMALL OUTLINE | NO LEAD | DUAL | Unknown | EAR99 | SC-70W, 6 PIN | ||||||||||||||||||
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2N7002NXBKR
Nexperia
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$0.0495 | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 330 mA | 3.2 Ω | 3 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 1.67 W | 900 mA | SWITCHING | SILICON | TO-236AB | R-PDSO-G3 | IEC-60134 | 1 | 150 °C | -55 °C | 260 | 40 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | DUAL | Compliant | EAR99 | SOT-23, 3 PIN | TO-236 | 3 | SOT23 | ||||||||||||
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PMZ200UNEYL
Nexperia
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$0.0501 | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 30 V | 1 | 1.4 A | 250 mΩ | 9 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 6.25 W | 5 A | SWITCHING | SILICON | R-PBCC-N3 | e3 | IEC-60134 | 1 | 150 °C | -55 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | CHIP CARRIER | TIN | NO LEAD | BOTTOM | Compliant | EAR99 | SOT-883, DFN1006-3, 3 PIN | DFN | 3 | SOT883 | ||||||||||
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NX7002BKMBYL
Nexperia
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$0.0511 | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 350 mA | 3.2 Ω | LOGIC LEVEL COMPATIBLE | 3 pF | TRENCH MOSFET | ENHANCEMENT MODE | 3.1 W | 900 mA | SWITCHING | SILICON | R-PBCC-N3 | e3 | IEC-60134 | 1 | 150 °C | -55 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | CHIP CARRIER | TIN | NO LEAD | BOTTOM | Compliant | EAR99 | DFN1006B-3, 3 PIN | DFN | 3 | SOT883B | |||||||||
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NX6008NBKR
Nexperia
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$0.0527 | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 270 mA | 2.8 Ω | 1.9 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 1.3 W | 1 A | SWITCHING | SILICON | TO-236AB | R-PDSO-G3 | IEC-60134 | 1 | 150 °C | -55 °C | 260 | 40 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | DUAL | Compliant | EAR99 | SOT-23, 3 PIN | TO-236 | 3 | SOT23 | ||||||||||||
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WMS20N700SKX
WeEn Semiconductor Co Ltd
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$0.0533 | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 20 V | 1 | 3.5 A | 70 mΩ | 25 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 1.4 W | 1.4 W | 14 A | SWITCHING | SILICON | R-PDSO-G3 | e3 | IEC-60134 | 150 °C | -55 °C | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | GULL WING | DUAL | Unknown | EAR99 |