Parametric results for: Power Field-Effect Transistors

Filter Your Search

21 - 30 of 180,230 results

|
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Sorted By: FET Technology
Select parts from the table below to compare.
Compare
Compare
ISL73020SEHMX
Renesas Electronics Corporation
Check for Price No No Active N-CHANNEL YES SINGLE 30 40 V 1 65 A 1.5 mΩ HIGH RELIABILITY 29 pF HIGH ELECTRON MOBILITY ENHANCEMENT MODE SWITCHING GALLIUM NITRIDE R-XBCC-N30 125 °C -55 °C NOT SPECIFIED NOT SPECIFIED UNSPECIFIED RECTANGULAR CHIP CARRIER NO LEAD BOTTOM RENESAS ELECTRONICS CORP DIE ISLDUMMY00 compliant EAR99 Renesas Electronics
ISL70020SEHML
Renesas Electronics Corporation
Check for Price Yes Active N-CHANNEL YES SINGLE 4 40 V 1 65 A 6 mΩ HIGH RELIABILITY 29 pF HIGH ELECTRON MOBILITY ENHANCEMENT MODE SWITCHING GALLIUM NITRIDE R-XBCC-N4 e4 RH - 100K Rad(Si) 125 °C -55 °C DRAIN SOURCE UNSPECIFIED RECTANGULAR CHIP CARRIER GOLD NO LEAD BOTTOM RENESAS ELECTRONICS CORP CLCC J4.A unknown EAR99 Renesas Electronics 4
ISL73020SEHML
Renesas Electronics Corporation
Check for Price Yes Active N-CHANNEL YES SINGLE 4 40 V 1 65 A 6 mΩ HIGH RELIABILITY 29 pF HIGH ELECTRON MOBILITY ENHANCEMENT MODE SWITCHING GALLIUM NITRIDE R-XBCC-N4 e4 125 °C -55 °C DRAIN SOURCE UNSPECIFIED RECTANGULAR CHIP CARRIER GOLD NO LEAD BOTTOM RENESAS ELECTRONICS CORP CLCC J4.A compliant EAR99 Renesas Electronics 4
SGT65R65AL
STMicroelectronics
$6.9833 Active N-CHANNEL YES SINGLE WITH BUILT-IN KELVIN SENSOR 8 650 V 1 25 A 65 mΩ BULK: 3000 3 pF HIGH ELECTRON MOBILITY ENHANCEMENT MODE 5 W 305 W 70 A SWITCHING GALLIUM NITRIDE R-PDSO-F8 150 °C -55 °C SOURCE PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE FLAT DUAL STMICROELECTRONICS unknown EAR99 STMicroelectronics 8541.29.00.95
EPC2212
Efficient Power Conversion
Check for Price Yes Contact Manufacturer N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 6 100 V 1 18 A 13.5 mΩ 3 pF HIGH ELECTRON MOBILITY ENHANCEMENT MODE 75 A SWITCHING GALLIUM NITRIDE R-XUUC-N6 AEC-Q101 1 150 °C -40 °C UNSPECIFIED RECTANGULAR UNCASED CHIP NO LEAD UPPER EFFICIENT POWER CONVERSION CORP unknown EAR99 Efficient Power Conversion DIE-6
SGT120R65AL
STMicroelectronics
$3.6226 Yes Active N-CHANNEL YES SINGLE 8 650 V 1 15 A 120 mΩ BULK: 3000 0.9 pF HIGH ELECTRON MOBILITY ENHANCEMENT MODE 192 W 36 A SWITCHING GALLIUM NITRIDE R-PDSO-F8 150 °C -55 °C NOT SPECIFIED NOT SPECIFIED DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE FLAT DUAL STMICROELECTRONICS compliant EAR99 STMicroelectronics
EPC7019GC
Micross Components
Check for Price Active N-CHANNEL YES SINGLE 5 40 V 1 80 A 4 mΩ HIGH RELIABILITY 35 pF HIGH ELECTRON MOBILITY DEPLETION MODE 530 A SWITCHING GALLIUM NITRIDE R-XBCC-N5 MIL-STD-750 150 °C -55 °C DRAIN SOURCE UNSPECIFIED RECTANGULAR CHIP CARRIER NO LEAD BOTTOM MICROSS COMPONENTS unknown EAR99
EPC2065
Efficient Power Conversion
Check for Price Yes Contact Manufacturer N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 8 80 V 1 60 A 3.6 mΩ 8.9 pF HIGH ELECTRON MOBILITY ENHANCEMENT MODE 215 A SWITCHING GALLIUM NITRIDE R-XUUC-N8 1 150 °C -40 °C UNSPECIFIED RECTANGULAR UNCASED CHIP NO LEAD UPPER EFFICIENT POWER CONVERSION CORP unknown EAR99 DIE-8
EPC2033
Efficient Power Conversion
$6.2088 Yes Yes Contact Manufacturer N-CHANNEL SINGLE WITH BUILT-IN DIODE 24 150 V 1 48 A 7 mΩ HIGH ELECTRON MOBILITY ENHANCEMENT MODE 260 A SWITCHING GALLIUM NITRIDE R-XXUC-X24 1 150 °C -40 °C UNSPECIFIED RECTANGULAR UNCASED CHIP UNSPECIFIED UNSPECIFIED EFFICIENT POWER CONVERSION CORP compliant EAR99 UNCASED CHIP, R-XXUC-X24
GS66508B-MR
GaN Systems
Check for Price Yes Contact Manufacturer N-CHANNEL YES SINGLE 4 650 V VERY HIGH FREQUENCY BAND 1 30 A 63 mΩ 1.5 pF HIGH ELECTRON MOBILITY ENHANCEMENT MODE 60 A SWITCHING GALLIUM NITRIDE R-XBCC-N4 e4 3 150 °C -55 °C 260 30 SOURCE UNSPECIFIED RECTANGULAR CHIP CARRIER Gold (Au) - with Nickel (Ni) barrier NO LEAD BOTTOM GAN SYSTEMS INC unknown EAR99 GaN Systems