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21 - 30 of 180,230 results
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ISL73020SEHMX
Renesas Electronics Corporation
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Check for Price | No | No | Active | N-CHANNEL | YES | SINGLE | 30 | 40 V | 1 | 65 A | 1.5 mΩ | HIGH RELIABILITY | 29 pF | HIGH ELECTRON MOBILITY | ENHANCEMENT MODE | SWITCHING | GALLIUM NITRIDE | R-XBCC-N30 | 125 °C | -55 °C | NOT SPECIFIED | NOT SPECIFIED | UNSPECIFIED | RECTANGULAR | CHIP CARRIER | NO LEAD | BOTTOM | RENESAS ELECTRONICS CORP | DIE | ISLDUMMY00 | compliant | EAR99 | Renesas Electronics | ||||||||||||||
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ISL70020SEHML
Renesas Electronics Corporation
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Check for Price | Yes | Active | N-CHANNEL | YES | SINGLE | 4 | 40 V | 1 | 65 A | 6 mΩ | HIGH RELIABILITY | 29 pF | HIGH ELECTRON MOBILITY | ENHANCEMENT MODE | SWITCHING | GALLIUM NITRIDE | R-XBCC-N4 | e4 | RH - 100K Rad(Si) | 125 °C | -55 °C | DRAIN SOURCE | UNSPECIFIED | RECTANGULAR | CHIP CARRIER | GOLD | NO LEAD | BOTTOM | RENESAS ELECTRONICS CORP | CLCC | J4.A | unknown | EAR99 | Renesas Electronics | 4 | ||||||||||||
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ISL73020SEHML
Renesas Electronics Corporation
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Check for Price | Yes | Active | N-CHANNEL | YES | SINGLE | 4 | 40 V | 1 | 65 A | 6 mΩ | HIGH RELIABILITY | 29 pF | HIGH ELECTRON MOBILITY | ENHANCEMENT MODE | SWITCHING | GALLIUM NITRIDE | R-XBCC-N4 | e4 | 125 °C | -55 °C | DRAIN SOURCE | UNSPECIFIED | RECTANGULAR | CHIP CARRIER | GOLD | NO LEAD | BOTTOM | RENESAS ELECTRONICS CORP | CLCC | J4.A | compliant | EAR99 | Renesas Electronics | 4 | |||||||||||||
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SGT65R65AL
STMicroelectronics
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$6.9833 | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN KELVIN SENSOR | 8 | 650 V | 1 | 25 A | 65 mΩ | BULK: 3000 | 3 pF | HIGH ELECTRON MOBILITY | ENHANCEMENT MODE | 5 W | 305 W | 70 A | SWITCHING | GALLIUM NITRIDE | R-PDSO-F8 | 150 °C | -55 °C | SOURCE | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | FLAT | DUAL | STMICROELECTRONICS | unknown | EAR99 | STMicroelectronics | 8541.29.00.95 | |||||||||||||||
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EPC2212
Efficient Power Conversion
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Check for Price | Yes | Contact Manufacturer | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 6 | 100 V | 1 | 18 A | 13.5 mΩ | 3 pF | HIGH ELECTRON MOBILITY | ENHANCEMENT MODE | 75 A | SWITCHING | GALLIUM NITRIDE | R-XUUC-N6 | AEC-Q101 | 1 | 150 °C | -40 °C | UNSPECIFIED | RECTANGULAR | UNCASED CHIP | NO LEAD | UPPER | EFFICIENT POWER CONVERSION CORP | unknown | EAR99 | Efficient Power Conversion | DIE-6 | ||||||||||||||||
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SGT120R65AL
STMicroelectronics
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$3.6226 | Yes | Active | N-CHANNEL | YES | SINGLE | 8 | 650 V | 1 | 15 A | 120 mΩ | BULK: 3000 | 0.9 pF | HIGH ELECTRON MOBILITY | ENHANCEMENT MODE | 192 W | 36 A | SWITCHING | GALLIUM NITRIDE | R-PDSO-F8 | 150 °C | -55 °C | NOT SPECIFIED | NOT SPECIFIED | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | FLAT | DUAL | STMICROELECTRONICS | compliant | EAR99 | STMicroelectronics | ||||||||||||||
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EPC7019GC
Micross Components
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Check for Price | Active | N-CHANNEL | YES | SINGLE | 5 | 40 V | 1 | 80 A | 4 mΩ | HIGH RELIABILITY | 35 pF | HIGH ELECTRON MOBILITY | DEPLETION MODE | 530 A | SWITCHING | GALLIUM NITRIDE | R-XBCC-N5 | MIL-STD-750 | 150 °C | -55 °C | DRAIN SOURCE | UNSPECIFIED | RECTANGULAR | CHIP CARRIER | NO LEAD | BOTTOM | MICROSS COMPONENTS | unknown | EAR99 | ||||||||||||||||||
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EPC2065
Efficient Power Conversion
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Check for Price | Yes | Contact Manufacturer | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 8 | 80 V | 1 | 60 A | 3.6 mΩ | 8.9 pF | HIGH ELECTRON MOBILITY | ENHANCEMENT MODE | 215 A | SWITCHING | GALLIUM NITRIDE | R-XUUC-N8 | 1 | 150 °C | -40 °C | UNSPECIFIED | RECTANGULAR | UNCASED CHIP | NO LEAD | UPPER | EFFICIENT POWER CONVERSION CORP | unknown | EAR99 | DIE-8 | ||||||||||||||||||
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EPC2033
Efficient Power Conversion
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$6.2088 | Yes | Yes | Contact Manufacturer | N-CHANNEL | SINGLE WITH BUILT-IN DIODE | 24 | 150 V | 1 | 48 A | 7 mΩ | HIGH ELECTRON MOBILITY | ENHANCEMENT MODE | 260 A | SWITCHING | GALLIUM NITRIDE | R-XXUC-X24 | 1 | 150 °C | -40 °C | UNSPECIFIED | RECTANGULAR | UNCASED CHIP | UNSPECIFIED | UNSPECIFIED | EFFICIENT POWER CONVERSION CORP | compliant | EAR99 | UNCASED CHIP, R-XXUC-X24 | |||||||||||||||||||
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GS66508B-MR
GaN Systems
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Check for Price | Yes | Contact Manufacturer | N-CHANNEL | YES | SINGLE | 4 | 650 V | VERY HIGH FREQUENCY BAND | 1 | 30 A | 63 mΩ | 1.5 pF | HIGH ELECTRON MOBILITY | ENHANCEMENT MODE | 60 A | SWITCHING | GALLIUM NITRIDE | R-XBCC-N4 | e4 | 3 | 150 °C | -55 °C | 260 | 30 | SOURCE | UNSPECIFIED | RECTANGULAR | CHIP CARRIER | Gold (Au) - with Nickel (Ni) barrier | NO LEAD | BOTTOM | GAN SYSTEMS INC | unknown | EAR99 | GaN Systems |