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GS66502B-E01-MR
GaN Systems
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Check for Price | Yes | Obsolete | N-CHANNEL | YES | SINGLE | 3 | 650 V | 1 | 7.5 A | 260 mΩ | 0.5 pF | HIGH ELECTRON MOBILITY | ENHANCEMENT MODE | 15 A | SWITCHING | GALLIUM NITRIDE | R-PBCC-N3 | e4 | 3 | 150 °C | -55 °C | 260 | 30 | SOURCE | PLASTIC/EPOXY | RECTANGULAR | CHIP CARRIER | GOLD OVER NICKEL | NO LEAD | BOTTOM | GAN SYSTEMS INC | unknown | EAR99 | GaN Systems | |||||||
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EPC2218
Efficient Power Conversion
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Check for Price | Yes | Contact Manufacturer | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 8 | 100 V | 1 | 60 A | 3.2 mΩ | 4.3 pF | HIGH ELECTRON MOBILITY | ENHANCEMENT MODE | 231 A | SWITCHING | GALLIUM NITRIDE | R-XUUC-N8 | 1 | 150 °C | -40 °C | UNSPECIFIED | RECTANGULAR | UNCASED CHIP | NO LEAD | UPPER | EFFICIENT POWER CONVERSION CORP | unknown | EAR99 | DIE-8 | ||||||||||||
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EPC2035
Efficient Power Conversion
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$0.6237 | Yes | Contact Manufacturer | N-CHANNEL | SINGLE WITH BUILT-IN DIODE | 4 | 60 V | 1 | 1.7 A | 45 mΩ | ULTRA LOW RESISTANCE | HIGH ELECTRON MOBILITY | ENHANCEMENT MODE | 24 A | SWITCHING | GALLIUM NITRIDE | S-XXUC-X4 | 150 °C | -40 °C | NOT SPECIFIED | NOT SPECIFIED | UNSPECIFIED | SQUARE | UNCASED CHIP | UNSPECIFIED | UNSPECIFIED | EFFICIENT POWER CONVERSION CORP | unknown | EAR99 | UNCASED CHIP, S-XXUC-X4 | ||||||||||||
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GS66502B-TR
GaN Systems
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Check for Price | Yes | Contact Manufacturer | N-CHANNEL | YES | SINGLE | 3 | 650 V | 1 | 7.5 A | 260 mΩ | 0.5 pF | HIGH ELECTRON MOBILITY | ENHANCEMENT MODE | 15 A | SWITCHING | GALLIUM NITRIDE | R-PBCC-N3 | e4 | 3 | 150 °C | -55 °C | 260 | 30 | SOURCE | PLASTIC/EPOXY | RECTANGULAR | CHIP CARRIER | GOLD OVER NICKEL | NO LEAD | BOTTOM | GAN SYSTEMS INC | unknown | EAR99 | GaN Systems | |||||||
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GS66502B-MR
GaN Systems
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Check for Price | Yes | Contact Manufacturer | N-CHANNEL | YES | SINGLE | 3 | 650 V | 1 | 7.5 A | 260 mΩ | 0.5 pF | HIGH ELECTRON MOBILITY | ENHANCEMENT MODE | 15 A | SWITCHING | GALLIUM NITRIDE | R-PBCC-N3 | e4 | 3 | 150 °C | -55 °C | 260 | 30 | SOURCE | PLASTIC/EPOXY | RECTANGULAR | CHIP CARRIER | GOLD OVER NICKEL | NO LEAD | BOTTOM | GAN SYSTEMS INC | unknown | EAR99 | GaN Systems | |||||||
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FBG04N08ASH
Micross Components
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Check for Price | Active | N-CHANNEL | YES | SINGLE | 4 | 40 V | 1 | 8 A | 28 mΩ | HIGH RELIABILITY | 25 pF | HIGH ELECTRON MOBILITY | DEPLETION MODE | 32 A | SWITCHING | GALLIUM NITRIDE | S-XBCC-N4 | MIL-PRF-19500; MIL-STD-750; RH - 1000K Rad(Si) | 150 °C | -55 °C | UNSPECIFIED | SQUARE | CHIP CARRIER | NO LEAD | BOTTOM | MICROSS COMPONENTS | unknown | EAR99 | |||||||||||||
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EPC2207
Efficient Power Conversion
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Check for Price | Yes | Contact Manufacturer | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 6 | 200 V | 1 | 14 A | 22 mΩ | 0.7 pF | HIGH ELECTRON MOBILITY | ENHANCEMENT MODE | 54 A | SWITCHING | GALLIUM NITRIDE | R-XUUC-X6 | 1 | 150 °C | -40 °C | UNSPECIFIED | RECTANGULAR | UNCASED CHIP | UNSPECIFIED | UPPER | EFFICIENT POWER CONVERSION CORP | unknown | EAR99 | DIE-6 | ||||||||||||
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GS66508B-TR
GaN Systems
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Check for Price | Yes | Contact Manufacturer | N-CHANNEL | YES | SINGLE | 4 | 650 V | VERY HIGH FREQUENCY BAND | 1 | 30 A | 63 mΩ | 1.5 pF | HIGH ELECTRON MOBILITY | ENHANCEMENT MODE | 60 A | SWITCHING | GALLIUM NITRIDE | R-XBCC-N4 | e4 | 3 | 150 °C | -55 °C | 260 | 30 | SOURCE | UNSPECIFIED | RECTANGULAR | CHIP CARRIER | Gold (Au) - with Nickel (Ni) barrier | NO LEAD | BOTTOM | GAN SYSTEMS INC | unknown | EAR99 | GaN Systems | ||||||
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EPC2111
Efficient Power Conversion
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$2.3231 | Yes | Contact Manufacturer | N-CHANNEL | YES | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | 21 | 30 V | 2 | 16 A | 19 mΩ | 8 pF | HIGH ELECTRON MOBILITY | ENHANCEMENT MODE | 50 A | SWITCHING | GALLIUM NITRIDE | R-XUUC-X21 | 1 | 150 °C | -40 °C | UNSPECIFIED | RECTANGULAR | UNCASED CHIP | UNSPECIFIED | UPPER | EFFICIENT POWER CONVERSION CORP | unknown | EAR99 | Efficient Power Conversion | DIE-21 | |||||||||||
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EPC2032
Efficient Power Conversion
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$5.1445 | Yes | Yes | Not Recommended | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 24 | 100 V | 1 | 48 A | 4 mΩ | 14 pF | HIGH ELECTRON MOBILITY | ENHANCEMENT MODE | 340 A | SWITCHING | GALLIUM NITRIDE | R-XUUC-X24 | 1 | 150 °C | -40 °C | UNSPECIFIED | RECTANGULAR | UNCASED CHIP | UNSPECIFIED | UPPER | EFFICIENT POWER CONVERSION CORP | unknown | Efficient Power Conversion | DIE-24 |