Parametric results for: IRFR024NTRPBF under Power Field-Effect Transistors

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Sorted By: FET Technology
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GS66502B-E01-MR
GaN Systems
Check for Price Yes Obsolete N-CHANNEL YES SINGLE 3 650 V 1 7.5 A 260 mΩ 0.5 pF HIGH ELECTRON MOBILITY ENHANCEMENT MODE 15 A SWITCHING GALLIUM NITRIDE R-PBCC-N3 e4 3 150 °C -55 °C 260 30 SOURCE PLASTIC/EPOXY RECTANGULAR CHIP CARRIER GOLD OVER NICKEL NO LEAD BOTTOM GAN SYSTEMS INC unknown EAR99 GaN Systems
EPC2218
Efficient Power Conversion
Check for Price Yes Contact Manufacturer N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 8 100 V 1 60 A 3.2 mΩ 4.3 pF HIGH ELECTRON MOBILITY ENHANCEMENT MODE 231 A SWITCHING GALLIUM NITRIDE R-XUUC-N8 1 150 °C -40 °C UNSPECIFIED RECTANGULAR UNCASED CHIP NO LEAD UPPER EFFICIENT POWER CONVERSION CORP unknown EAR99 DIE-8
EPC2035
Efficient Power Conversion
$0.6237 Yes Contact Manufacturer N-CHANNEL SINGLE WITH BUILT-IN DIODE 4 60 V 1 1.7 A 45 mΩ ULTRA LOW RESISTANCE HIGH ELECTRON MOBILITY ENHANCEMENT MODE 24 A SWITCHING GALLIUM NITRIDE S-XXUC-X4 150 °C -40 °C NOT SPECIFIED NOT SPECIFIED UNSPECIFIED SQUARE UNCASED CHIP UNSPECIFIED UNSPECIFIED EFFICIENT POWER CONVERSION CORP unknown EAR99 UNCASED CHIP, S-XXUC-X4
GS66502B-TR
GaN Systems
Check for Price Yes Contact Manufacturer N-CHANNEL YES SINGLE 3 650 V 1 7.5 A 260 mΩ 0.5 pF HIGH ELECTRON MOBILITY ENHANCEMENT MODE 15 A SWITCHING GALLIUM NITRIDE R-PBCC-N3 e4 3 150 °C -55 °C 260 30 SOURCE PLASTIC/EPOXY RECTANGULAR CHIP CARRIER GOLD OVER NICKEL NO LEAD BOTTOM GAN SYSTEMS INC unknown EAR99 GaN Systems
GS66502B-MR
GaN Systems
Check for Price Yes Contact Manufacturer N-CHANNEL YES SINGLE 3 650 V 1 7.5 A 260 mΩ 0.5 pF HIGH ELECTRON MOBILITY ENHANCEMENT MODE 15 A SWITCHING GALLIUM NITRIDE R-PBCC-N3 e4 3 150 °C -55 °C 260 30 SOURCE PLASTIC/EPOXY RECTANGULAR CHIP CARRIER GOLD OVER NICKEL NO LEAD BOTTOM GAN SYSTEMS INC unknown EAR99 GaN Systems
FBG04N08ASH
Micross Components
Check for Price Active N-CHANNEL YES SINGLE 4 40 V 1 8 A 28 mΩ HIGH RELIABILITY 25 pF HIGH ELECTRON MOBILITY DEPLETION MODE 32 A SWITCHING GALLIUM NITRIDE S-XBCC-N4 MIL-PRF-19500; MIL-STD-750; RH - 1000K Rad(Si) 150 °C -55 °C UNSPECIFIED SQUARE CHIP CARRIER NO LEAD BOTTOM MICROSS COMPONENTS unknown EAR99
EPC2207
Efficient Power Conversion
Check for Price Yes Contact Manufacturer N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 6 200 V 1 14 A 22 mΩ 0.7 pF HIGH ELECTRON MOBILITY ENHANCEMENT MODE 54 A SWITCHING GALLIUM NITRIDE R-XUUC-X6 1 150 °C -40 °C UNSPECIFIED RECTANGULAR UNCASED CHIP UNSPECIFIED UPPER EFFICIENT POWER CONVERSION CORP unknown EAR99 DIE-6
GS66508B-TR
GaN Systems
Check for Price Yes Contact Manufacturer N-CHANNEL YES SINGLE 4 650 V VERY HIGH FREQUENCY BAND 1 30 A 63 mΩ 1.5 pF HIGH ELECTRON MOBILITY ENHANCEMENT MODE 60 A SWITCHING GALLIUM NITRIDE R-XBCC-N4 e4 3 150 °C -55 °C 260 30 SOURCE UNSPECIFIED RECTANGULAR CHIP CARRIER Gold (Au) - with Nickel (Ni) barrier NO LEAD BOTTOM GAN SYSTEMS INC unknown EAR99 GaN Systems
EPC2111
Efficient Power Conversion
$2.3231 Yes Contact Manufacturer N-CHANNEL YES SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE 21 30 V 2 16 A 19 mΩ 8 pF HIGH ELECTRON MOBILITY ENHANCEMENT MODE 50 A SWITCHING GALLIUM NITRIDE R-XUUC-X21 1 150 °C -40 °C UNSPECIFIED RECTANGULAR UNCASED CHIP UNSPECIFIED UPPER EFFICIENT POWER CONVERSION CORP unknown EAR99 Efficient Power Conversion DIE-21
EPC2032
Efficient Power Conversion
$5.1445 Yes Yes Not Recommended N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 24 100 V 1 48 A 4 mΩ 14 pF HIGH ELECTRON MOBILITY ENHANCEMENT MODE 340 A SWITCHING GALLIUM NITRIDE R-XUUC-X24 1 150 °C -40 °C UNSPECIFIED RECTANGULAR UNCASED CHIP UNSPECIFIED UPPER EFFICIENT POWER CONVERSION CORP unknown Efficient Power Conversion DIE-24