Parametric results for: 2n7000 under Small Signal Field-Effect Transistors
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2N7000RLRP
Motorola Semiconductor Products
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Check for Price | Transferred | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 200 mA | 5 Ω | 5 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 350 mW | SWITCHING | SILICON | TO-92 | O-PBCY-T3 | Not Qualified | 150 °C | PLASTIC/EPOXY | ROUND | CYLINDRICAL | THROUGH-HOLE | BOTTOM | MOTOROLA INC | CYLINDRICAL, O-PBCY-T3 | unknown | EAR99 | 8541.21.00.95 | |||||||||||||||
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2N7000ZG-T92-R
Unisonic Technologies Co Ltd
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Check for Price | Yes | Active | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 115 mA | 7.5 Ω | 5 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | SWITCHING | SILICON | TO-92 | O-PBCY-T3 | NOT SPECIFIED | NOT SPECIFIED | PLASTIC/EPOXY | ROUND | CYLINDRICAL | THROUGH-HOLE | BOTTOM | UNISONIC TECHNOLOGIES CO LTD | HALOGEN FREE PACKAGE-3 | compliant | EAR99 | TO-92 | 3 | ||||||||||||||
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2N7000J60Z
Fairchild Semiconductor Corporation
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Check for Price | Obsolete | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 200 mA | 5 Ω | 5 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | SWITCHING | SILICON | O-PBCY-T3 | Not Qualified | 150 °C | PLASTIC/EPOXY | ROUND | CYLINDRICAL | THROUGH-HOLE | BOTTOM | FAIRCHILD SEMICONDUCTOR CORP | CYLINDRICAL, O-PBCY-T3 | unknown | EAR99 | TO-92 | 3 | ||||||||||||||||
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2N7000_D74Z
Fairchild Semiconductor Corporation
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Check for Price | Yes | Yes | Transferred | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 200 mA | 5 Ω | 5 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 400 mW | SWITCHING | SILICON | TO-92 | O-PBCY-T3 | e1 | Not Qualified | 150 °C | -55 °C | PLASTIC/EPOXY | ROUND | CYLINDRICAL | TIN SILVER COPPER | THROUGH-HOLE | BOTTOM | FAIRCHILD SEMICONDUCTOR CORP | CYLINDRICAL, O-PBCY-T3 | compliant | EAR99 | TO-92 | 3 | 3LD, TO-92, MOLDED, 0.200 IN LINE SPACING LD FORM (J61Z OPTION) | ||||||||
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2N7000RL
onsemi
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Check for Price | No | Obsolete | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 200 mA | 5 Ω | EUROPEAN PART NUMBER | 5 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | SILICON | TO-92 | O-PBCY-T3 | e0 | Not Qualified | 150 °C | PLASTIC/EPOXY | ROUND | CYLINDRICAL | TIN LEAD | THROUGH-HOLE | BOTTOM | ON SEMICONDUCTOR | PLASTIC, TO-226AA, 3 PIN | compliant | EAR99 | TO-92 | 3 | ||||||||||||
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2N7000/D29Z
Texas Instruments
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Check for Price | Obsolete | N-CHANNEL | NO | SINGLE | 3 | 60 V | 1 | 200 mA | 5 Ω | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | SILICON | TO-92 | O-PBCY-T3 | Not Qualified | PLASTIC/EPOXY | ROUND | CYLINDRICAL | THROUGH-HOLE | BOTTOM | NATIONAL SEMICONDUCTOR CORP | CYLINDRICAL, O-PBCY-T3 | unknown | EAR99 | ||||||||||||||||||||
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2N7000-GP013
Microchip Technology Inc
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Check for Price | Active | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 200 mA | 5 Ω | 5 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | SWITCHING | SILICON | TO-92 | O-PBCY-T3 | 150 °C | -55 °C | PLASTIC/EPOXY | ROUND | CYLINDRICAL | THROUGH-HOLE | BOTTOM | MICROCHIP TECHNOLOGY INC | CYLINDRICAL, O-PBCY-T3 | compliant | EAR99 | |||||||||||||||||
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2N7000RLRM
onsemi
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Check for Price | No | Obsolete | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 200 mA | 5 Ω | 5 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 400 mW | SWITCHING | SILICON | TO-92 | O-PBCY-T3 | e0 | Not Qualified | 150 °C | 235 | PLASTIC/EPOXY | ROUND | CYLINDRICAL | TIN LEAD | THROUGH-HOLE | BOTTOM | ON SEMICONDUCTOR | CASE 29-11, TO-226, 3 PIN | not_compliant | EAR99 | TO-92 | 3 | CASE 29-11 | onsemi | ||||||||
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2N7000BUJ18Z
Fairchild Semiconductor Corporation
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Check for Price | Obsolete | N-CHANNEL | NO | SINGLE | 3 | 60 V | 1 | 200 mA | 5 Ω | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | SWITCHING | SILICON | O-PBCY-T3 | Not Qualified | 150 °C | PLASTIC/EPOXY | ROUND | CYLINDRICAL | THROUGH-HOLE | BOTTOM | FAIRCHILD SEMICONDUCTOR CORP | CYLINDRICAL, O-PBCY-T3 | unknown | EAR99 | TO-92 | 3 | |||||||||||||||||
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2N7000RLRPG
onsemi
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Check for Price | Yes | Obsolete | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 200 mA | 5 Ω | 5 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 350 mW | SILICON | TO-92 | O-PBCY-T3 | e1 | Not Qualified | 150 °C | 260 | 40 | PLASTIC/EPOXY | ROUND | CYLINDRICAL | Tin/Silver/Copper (Sn/Ag/Cu) | THROUGH-HOLE | BOTTOM | ON SEMICONDUCTOR | LEAD FREE, CASE 29-11, TO-226, 3 PIN | unknown | EAR99 | TO-92 (TO-226) 5.33mm Body Height | 3 | 29-11 | onsemi |