Parametric results for: 2n7000 under Small Signal Field-Effect Transistors
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2N7000
Diotec Semiconductor AG
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$0.0475 | Yes | Active | N-CHANNEL | NO | SINGLE | 3 | 60 V | 1 | 200 mA | 5 Ω | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | SILICON | TO-92 | O-PBCY-W3 | e3 | Not Qualified | 1 | 150 °C | 260 | 10 | PLASTIC/EPOXY | ROUND | CYLINDRICAL | MATTE TIN | WIRE | BOTTOM | DIOTEC SEMICONDUCTOR AG | TO-92 | ROHS COMPLIANT, PLASTIC, 10D3, 3 PIN | 3 | compliant | EAR99 | Diotec | ||||||||||
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2N7000G4
TT Electronics Resistors
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Check for Price | Yes | Active | N-CHANNEL | NO | SINGLE | 3 | 60 V | 1 | 200 mA | 5 Ω | 5 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | SILICON | TO-92 | O-PBCY-T3 | e4 | Not Qualified | 150 °C | PLASTIC/EPOXY | ROUND | CYLINDRICAL | GOLD | THROUGH-HOLE | BOTTOM | TT ELECTRONICS PLC | compliant | EAR99 | ||||||||||||||||
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2N7000
NXP Semiconductors
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Check for Price | Yes | Obsolete | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 300 mA | 5 Ω | LOGIC LEVEL COMPATIBLE | 10 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 830 mW | SWITCHING | SILICON | TO-92 | O-PBCY-T3 | e3 | Not Qualified | 150 °C | PLASTIC/EPOXY | ROUND | CYLINDRICAL | TIN | THROUGH-HOLE | BOTTOM | NXP SEMICONDUCTORS | TO-92 | PLASTIC, TO-92 VARIANT, 3 PIN | 3 | unknown | EAR99 | NXP | |||||||||
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2N7000RLRM
Freescale Semiconductor
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Check for Price | No | Obsolete | N-CHANNEL | NO | Single | 200 mA | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 400 mW | 150 °C | MOTOROLA SEMICONDUCTOR PRODUCTS | , | unknown | |||||||||||||||||||||||||||||||
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2N7000L18
Vishay Siliconix
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Check for Price | Obsolete | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 200 mA | 5 Ω | 5 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | SILICON | TO-226AA | O-PBCY-T3 | e0 | Not Qualified | 150 °C | PLASTIC/EPOXY | ROUND | CYLINDRICAL | TIN LEAD | THROUGH-HOLE | BOTTOM | VISHAY SILICONIX | unknown | ||||||||||||||||||
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2N7000/D75Z
Texas Instruments
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Check for Price | Obsolete | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 200 mA | 5 Ω | 5 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 400 mW | SWITCHING | SILICON | TO-92 | O-PBCY-T3 | Not Qualified | 150 °C | -55 °C | PLASTIC/EPOXY | ROUND | CYLINDRICAL | THROUGH-HOLE | BOTTOM | NATIONAL SEMICONDUCTOR CORP | CYLINDRICAL, O-PBCY-T3 | unknown | EAR99 | |||||||||||||||
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2N7000/E7
Vishay Semiconductors
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Check for Price | Yes | Obsolete | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 300 mA | 5 Ω | LOGIC LEVEL COMPATIBLE | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 830 mW | SWITCHING | SILICON | TO-226AA | O-PBCY-W3 | e0 | Not Qualified | 150 °C | PLASTIC/EPOXY | ROUND | CYLINDRICAL | Tin/Lead (Sn/Pb) | WIRE | BOTTOM | VISHAY SEMICONDUCTORS | PLASTIC, TO-92, 3 PIN | unknown | ||||||||||||||
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2N7000
Philips Semiconductors
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Check for Price | Yes | Transferred | N-CHANNEL | NO | SINGLE | 1 | 200 mA | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 400 mW | e3 | 150 °C | Matte Tin (Sn) | PHILIPS SEMICONDUCTORS | unknown | EAR99 | ||||||||||||||||||||||||||||
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2N7000RLRF
Motorola Mobility LLC
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Check for Price | Obsolete | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 200 mA | 5 Ω | 5 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 350 mW | SWITCHING | SILICON | TO-92 | O-PBCY-T3 | Not Qualified | 150 °C | PLASTIC/EPOXY | ROUND | CYLINDRICAL | THROUGH-HOLE | BOTTOM | MOTOROLA INC | CYLINDRICAL, O-PBCY-T3 | unknown | EAR99 | 8541.21.00.95 | |||||||||||||||
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2N7000P017
Supertex Inc
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Check for Price | No | Obsolete | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 200 mA | 5 Ω | 5 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | SWITCHING | SILICON | TO-92 | O-PBCY-T3 | e0 | Not Qualified | 150 °C | PLASTIC/EPOXY | ROUND | CYLINDRICAL | TIN LEAD | THROUGH-HOLE | BOTTOM | SUPERTEX INC | CYLINDRICAL, O-PBCY-T3 | compliant | EAR99 |