Parametric results for: 2n7000 under Small Signal Field-Effect Transistors

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Sorted By: FET Technology
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ISL73024SEHML
Renesas Electronics Corporation
Check for Price Yes Active N-CHANNEL YES SINGLE 4 200 V 1 7.5 A 110 mΩ HIGH RELIABILITY 1 pF HIGH ELECTRON MOBILITY ENHANCEMENT MODE SWITCHING GALLIUM NITRIDE R-XBCC-N4 e4 125 °C -55 °C SOURCE UNSPECIFIED RECTANGULAR CHIP CARRIER Gold (Au) NO LEAD BOTTOM RENESAS ELECTRONICS CORP CLCC , 4 J4.A compliant EAR99 Renesas Electronics
ISL73024SEHX/SAMPLE
Renesas Electronics Corporation
Check for Price No Active N-CHANNEL YES SINGLE 7 200 V 1 7.5 A 110 mΩ HIGH RELIABILITY 1 pF HIGH ELECTRON MOBILITY ENHANCEMENT MODE SWITCHING GALLIUM NITRIDE R-XBCC-N7 125 °C -55 °C NOT SPECIFIED NOT SPECIFIED DRAIN SOURCE UNSPECIFIED RECTANGULAR CHIP CARRIER NO LEAD BOTTOM RENESAS ELECTRONICS CORP PFL ISLDUMMY00 compliant EAR99 Renesas Electronics
ISL73024SEHL/PROTO
Renesas Electronics Corporation
Check for Price Yes Active N-CHANNEL YES SINGLE 4 200 V 1 7.5 A 110 mΩ HIGH RELIABILITY 1 pF HIGH ELECTRON MOBILITY ENHANCEMENT MODE SWITCHING GALLIUM NITRIDE R-XBCC-N4 e4 125 °C -55 °C SOURCE UNSPECIFIED RECTANGULAR CHIP CARRIER GOLD NO LEAD BOTTOM RENESAS ELECTRONICS CORP CLCC 4 J4.A compliant EAR99 Renesas Electronics
ISL73024SEHMX
Renesas Electronics Corporation
Check for Price No No Active N-CHANNEL YES SINGLE 7 200 V 1 7.5 A 110 mΩ HIGH RELIABILITY 1 pF HIGH ELECTRON MOBILITY ENHANCEMENT MODE SWITCHING GALLIUM NITRIDE R-XBCC-N7 125 °C -55 °C NOT SPECIFIED NOT SPECIFIED DRAIN SOURCE UNSPECIFIED RECTANGULAR CHIP CARRIER NO LEAD BOTTOM RENESAS ELECTRONICS CORP DIE , ISLDUMMY00 compliant EAR99 Renesas Electronics
EPC7014UBC
Micross Components
Check for Price Active N-CHANNEL YES SINGLE 3 60 V 1 1 A 580 mΩ HIGH RELIABILITY 0.1 pF HIGH ELECTRON MOBILITY DEPLETION MODE SWITCHING GALLIUM NITRIDE R-PDSO-N3 MIL-STD-750 150 °C -55 °C PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE NO LEAD DUAL MICROSS COMPONENTS unknown
EPC7014UBSH
Micross Components
Check for Price Active N-CHANNEL YES SINGLE 3 60 V 1 1 A 580 mΩ HIGH RELIABILITY 0.1 pF HIGH ELECTRON MOBILITY DEPLETION MODE SWITCHING GALLIUM NITRIDE R-PDSO-N3 MIL-PRF-19500; MIL-STD-750; RH - 1000K Rad(Si) 150 °C -55 °C PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE NO LEAD DUAL MICROSS COMPONENTS unknown
ISL70024SEHX/SAMPLE
Renesas Electronics Corporation
Check for Price No Active N-CHANNEL YES SINGLE 7 200 V 1 7.5 A 110 mΩ HIGH RELIABILITY 1 pF HIGH ELECTRON MOBILITY ENHANCEMENT MODE SWITCHING GALLIUM NITRIDE R-XBCC-N7 RH - 100K Rad(Si) 125 °C -55 °C NOT SPECIFIED NOT SPECIFIED DRAIN SOURCE UNSPECIFIED RECTANGULAR CHIP CARRIER NO LEAD BOTTOM RENESAS ELECTRONICS CORP PFL ISLDUMMY00 compliant EAR99 Renesas Electronics
ISL70024SEHMX
Renesas Electronics Corporation
Check for Price No No Active N-CHANNEL YES SINGLE 7 200 V 1 7.5 A 110 mΩ HIGH RELIABILITY 1 pF HIGH ELECTRON MOBILITY ENHANCEMENT MODE SWITCHING GALLIUM NITRIDE R-XBCC-N7 RH - 100K Rad(Si) 125 °C -55 °C NOT SPECIFIED NOT SPECIFIED DRAIN SOURCE UNSPECIFIED RECTANGULAR CHIP CARRIER NO LEAD BOTTOM RENESAS ELECTRONICS CORP DIE , ISLDUMMY00 compliant EAR99 Renesas Electronics
ISL70024SEHL/PROTO
Renesas Electronics Corporation
Check for Price Yes Active N-CHANNEL YES SINGLE 4 200 V 1 7.5 A 110 mΩ HIGH RELIABILITY 1 pF HIGH ELECTRON MOBILITY ENHANCEMENT MODE SWITCHING GALLIUM NITRIDE R-XBCC-N4 e4 RH - 100K Rad(Si) 125 °C -55 °C SOURCE UNSPECIFIED RECTANGULAR CHIP CARRIER GOLD NO LEAD BOTTOM RENESAS ELECTRONICS CORP CLCC 4 J4.A compliant EAR99 Renesas Electronics
ISL70024SEHML
Renesas Electronics Corporation
Check for Price Yes Active N-CHANNEL YES SINGLE 4 200 V 1 7.5 A 110 mΩ HIGH RELIABILITY 1 pF HIGH ELECTRON MOBILITY ENHANCEMENT MODE SWITCHING GALLIUM NITRIDE R-XBCC-N4 e4 RH - 100K Rad(Si) 125 °C -55 °C SOURCE UNSPECIFIED RECTANGULAR CHIP CARRIER Gold (Au) NO LEAD BOTTOM RENESAS ELECTRONICS CORP CLCC , 4 J4.A compliant EAR99 Renesas Electronics