Parametric results for: 千阳找良家兼职＋32o710041_q^扣rin under Microwave Mixer Diodes

All Filters Additional Feature Breakdown Voltage-Min Case Connection Configuration Diode Capacitance-Max Diode Element Material Diode Type Forward Voltage-Max (VF) Frequency Band Impedance-Max Impedance-Min JESD-30 Code JESD-609 Code Manufacturer Number of Elements Operating Frequency-Max Operating Frequency-Min Output Current-Max Power Dissipation-Max Rep Pk Reverse Voltage-Max Reverse Current-Max Surface Mount Technology

FORMED LEADS 16 HIGH RELIABILITY 302 LOW NOISE 10 MATCHED PAIR 6 TIGHT BATCH MATCHING, HIGH RELIABILITY, STATIC SENSITIVE 13 TIGHT BATCH MATCHING, STATIC SENSITIVE 7

1,673 hits Apply

Breakdown Voltage-Min (14)

2 mV 3 3 mV 2 2 V 23 2.5 V 4 3 V 13 3.5 V 21 4 V 26 5 V 14 6 V 12 8 V 7 10 V 2 15 V 3 20 V 8 70 V 9

Min (V) - Max (V)

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ANODE AND CATHODE 83 CATHODE 6 ISOLATED 48

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Configuration (1)

RING, 4 ELEMENTS 1,673

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Diode Capacitance-Max (38)

0.05 pF 4 0.06 pF 4 0.08 pF 4 0.1 pF 174 0.12 pF 33 0.13 pF 4 0.15 pF 277 0.16 pF 4 0.18 pF 5 0.19 pF 2 0.2 pF 97 0.21 pF 5 0.22 pF 18 0.25 pF 50 0.26 pF 25 0.27 pF 16 0.28 pF 6 0.3 pF 284 0.31 pF 10 0.32 pF 2 0.33 pF 12 0.35 pF 9 0.36 pF 4 0.38 pF 18 0.4 pF 30 0.41 pF 8 0.42 pF 4 0.45 pF 6 0.48 pF 13 0.5 pF 287 0.51 pF 4 0.55 pF 14 0.6 pF 20 0.65 pF 3 0.67 pF 1 1 pF 60 1.2 pF 53 2 pF 24

Min (pF) - Max (pF)

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Diode Element Material (2)

GALLIUM ARSENIDE 31 SILICON 1,642

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Diode Type (1)

MIXER DIODE 1,673

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Forward Voltage-Max (VF) (30)

270 mV 2 280 mV 11 300 mV 13 310 mV 11 330 mV 11 340 mV 34 350 mV 19 360 mV 11 375 mV 10 380 mV 9 400 mV 18 410 mV 15 420 mV 11 430 mV 2 440 mV 11 460 mV 11 470 mV 13 500 mV 24 510 mV 11 530 mV 13 540 mV 11 550 mV 11 610 mV 11 630 mV 11 640 mV 11 660 mV 11 670 mV 4 750 mV 2 800 mV 4 1 V 27

Min (V) - Max (V)

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C BAND 178 C BAND TO X BAND 9 K BAND 39 K BAND TO KA BAND 6 KA BAND 47 KU BAND 221 KU BAND TO KA BAND 65 L BAND 3 L BAND TO K BAND 5 L BAND TO S BAND 82 MEDIUM FREQUENCY 35 MILLIMETER WAVE BAND 83 S BAND 255 S BAND TO C BAND 7 S BAND TO X BAND 4 ULTRA HIGH FREQUENCY 2 ULTRA HIGH FREQUENCY TO C BAND 6 V BAND 1 X BAND 298 X BAND TO K BAND 4 X BAND TO KU BAND 65

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150 Ω 15 350 Ω 4 400 Ω 16 500 Ω 12

Min (Ω) - Max (Ω)

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150 Ω 4 200 Ω 4 250 Ω 12 350 Ω 12

Min (Ω) - Max (Ω)

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O-CRDB-F4 203 O-PRDB-F4 188 O-XRDB-F4 98 R-CDMW-F4 5 R-CDMW-P4 2 R-CQMW-F4 21 R-CUUC-N4 6 R-CXSS-N4 3 R-PDSO-G3 19 R-PDSO-G4 179 R-PDSO-G6 6 R-XQMW-F4 7 S-CDMW-F4 48 S-CQMW-F4 342 S-CTMW-F3 2 S-CXMW-F3 4 S-CXMW-F4 261 S-CXSS-N4 3 S-LQMW-F4 8 S-LUMW-N4 2 S-PQMW-F4 33 S-PXMW-F4 85 S-XBCC-N4 7 S-XQMW-F4 64 S-XQSO-F4 2 S-XTMW-F3 2 S-XUUC-N4 18 X-CXMW-F4 8

1,673 hits Apply

e0 204 e3 99 e4 387

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Manufacturer (19)

Advanced Semiconductor Inc 178 Agilent Technologies Inc 89 Alpha Industries 138 Avago Technologies 75 Broadcom Limited 70 Cobham Advanced Electronic Solutions 15 Cobham PLC 54 Cobham Semiconductor Solutions 69 Dynex Semiconductor 4 Hewlett Packard Co 59 Isolink Inc 27 MACOM 169 Microchip Technology Inc 200 Microsemi Corporation 140 NEC Electronics America Inc 2 Semigen Inc 18 Siemens 24 Skyworks Solutions Inc 139 TE Connectivity 203

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Number of Elements (2)

2 2 4 1,671

Min - Max

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Operating Frequency-Max (12)

4 GHz 12 4.8 GHz 1 5.8 GHz 2 6 GHz 6 8 GHz 6 10 GHz 3 12 GHz 9 12.4 GHz 3 14 GHz 18 18 GHz 23 26 GHz 1 40 GHz 6

Min (GHz) - Max (GHz)

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Operating Frequency-Min (11)

0.0 GHz 24 915 MHz 2 1 GHz 8 2 GHz 6 2.4 GHz 1 8 GHz 3 8.2 GHz 3 10 GHz 18 12 GHz 3 12.4 GHz 6 18 GHz 1

Min (GHz) - Max (GHz)

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Output Current-Max (6)

10 µA 5 50 mA 78 1 A 9 50 A 12 80 A 1 100 A 13

Min (A) - Max (A)

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Power Dissipation-Max (7)

50 mW 7 75 mW 67 100 mW 311 150 mW 3 250 mW 45 300 mW 407 600 mW 28

Min (W) - Max (W)

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Rep Pk Reverse Voltage-Max (5)

3 V 31 10 V 1 15 V 6 20 V 13 70 V 18

Min (V) - Max (V)

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Reverse Current-Max (3)

100 nA 25 200 nA 38 500 nA 1

Min (µA) - Max (µA)

1,673 hits Apply

Surface Mount (2)

NO 2 YES 1,627

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Technology (2)

PLANAR DOPED BARRIER 12 SCHOTTKY 1,650

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